Patents by Inventor Sara Marelli

Sara Marelli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming three dimensional isolation structures
    Patent number: 9111773
    Abstract: A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: August 18, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Enzo Carollo, Marcello Mariani, Sara Marelli, Luca Di Piazza
  • FORMING THREE DIMENSIONAL ISOLATION STRUCTURES
    Publication number: 20150091128
    Abstract: A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.
    Type: Application
    Filed: December 11, 2014
    Publication date: April 2, 2015
    Inventors: Enzo Carollo, Marcello Mariani, Sara Marelli, Luca Di Piazza
  • Forming three dimensional isolation structures
    Patent number: 8932935
    Abstract: A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: January 13, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Enzo Carollo, Marcello Mariani, Sara Marelli, Luca Di Piazza
  • Forming Three Dimensional Isolation Structures
    Publication number: 20120126374
    Abstract: A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.
    Type: Application
    Filed: November 23, 2010
    Publication date: May 24, 2012
    Inventors: Enzo Carollo, Marcello Mariani, Sara Marelli, Luca Di Piazza