Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.

Abstract: A device includes a single photon avalanche diode in a substrate and a resistor. The resistor is provided resting on an insulating trench located in a doped anode region of the single photon avalanche diode.

Abstract: A device includes a single photon avalanche diode in a portion of a substrate, wherein the portion has an octagonal profile. The octagonal profile is delimited by a wall forming an octagonal contour around the portion. The device further includes an array of diodes, wherein each diode is located in a corner between four adjacent single photon avalanche diodes. Each single photon avalanche diode further includes a doped anode region. A shallow trench isolation is formed in each doped anode region. A polysilicon line forming a resistor is supported at the upper surface of the shallow trench isolation.

Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.

Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.

Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.

Abstract: A sensor array microchip apparatus includes a substrate and a lens positioned over the substrate. A plurality of radiation sensor elements are formed on the substrate in an array format and spatially separated from each other. The substrate further includes power supply circuitry (generating power for the radiation sensor elements) and processing circuitry (operable to control and process information from the radiation sensor elements). The power supply circuitry and said processing circuitry are positioned on the substrate within the array between two or more of the radiation sensor elements. The lens, in combination with the spatial separation of the radiation sensor elements in the array format, defines a relatively wide (30-80 degrees) field of regard for the sensor.

Abstract: A sensor array microchip apparatus includes a substrate and a lens positioned over the substrate. A plurality of radiation sensor elements are formed on the substrate in an array format and spatially separated from each other. The substrate further includes power supply circuitry (generating power for the radiation sensor elements) and processing circuitry (operable to control and process information from the radiation sensor elements). The power supply circuitry and said processing circuitry are positioned on the substrate within the array between two or more of the radiation sensor elements. The lens, in combination with the spatial separation of the radiation sensor elements in the array format, defines a relatively wide (30-80 degrees) field of regard for the sensor.