Abstract: A Cd1-xZnxS film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The Cd1-xZnxS material has excellent characteristics for use in a microbolometer-type uncooled infrared sensor. The film material can be deposited on microbolometer membranes or any other wafer for different applications. The film material can be deposited using the MOCVD technique, thermal evaporation or a different technique to form the film material over the wafer. The Cd1-xZnxS properties can be modified controlling certain deposition parameters and different annealing techniques. The process is performed at temperature compatible with CMOS technology.

Abstract: A Cd1-xZnxS film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The Cd1-xZnxS material has excellent characteristics for use in a microbolometer-type uncooled infrared sensor. The film material can be deposited on microbolometer membranes or any other wafer for different applications. The film material can be deposited using the MOCVD technique, thermal evaporation or a different technique to form the film material over the wafer. The Cd1-xZnxS properties can be modified controlling certain deposition parameters and different annealing techniques. The process is performed at temperature compatible with CMOS technology.

Abstract: A method for improving CdZnTe-based gamma-ray detectors is presented. A CdZnTe detector/crystal is exposed to acoustic waves. After exposure to acoustic waves, the CdZnTe gamma-detector gains higher resistivity and exhibits better spectral resolution and greater sensitivity. Further, when a batch of detectors is made according to the method of the present invention, the properties of the crystals are more homogenous, allowing for cheaper and more standardized detectors.

Abstract: A method for improving CdZnTe-based gamma-ray detectors is presented. A CdZnTe detector/crystal is exposed to acoustic waves. After exposure to acoustic waves, the CdZnTe gamma-detector gains higher resistivity and exhibits better spectral resolution and greater sensitivity. Further, when a batch of detectors is made according to the method of the present invention, the properties of the crystals are more homogenous, allowing for cheaper and more standardized detectors.

Abstract: A method and apparatus for selectively removing a native oxide layer from a silicon wafer without significantly affecting the underlying silicon or other material, that may be thereon, by exposing the silicon wafer to an etchant gas including NF3 while simultaneously exposing the wafer to ultraviolet radiation, and heating the wafer to a temperature of 100-400° C.

Abstract: A method and apparatus for selectively removing a native oxide layer from a silicon wafer without significantly affecting the underlying silicon or other materials that may be thereon, by exposing the silicon wafer to an etchant gas including NF3 while simultaneously exposing the wafer to ultraviolet radiation, and heating the wafer to a temperature of 100-400° C.