Patents by Inventor Sara TSUYUKI

Sara TSUYUKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Rinsing liquid for lithography and pattern forming method using same
    Patent number: 9494867
    Abstract: Disclosed are a rinse solution for lithography comprising water and a nonionic surfactant represented by the formula (I) (R1 and R2 may be the same as or different from each other and represent a hydrogen atom or a methyl group, R3 and R4 may be the same as or different from each other and represent a hydrogen atom, a methyl group or an ethyl group, R5 represents a hydrocarbon group having 2 to 5 carbon atoms, in which one or more of a double bond or triple bond are contained, or a phenylene group, and R6 and R7 may be the same as or different from each other and represent a hydrogen atom or a methyl group) and a method for forming a resist pattern by rinsing the resist pattern obtained by exposing and developing a photosensitive resist with the rinse solution for lithography described above.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: November 15, 2016
    Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Yuriko Matsuura, Sara Tsuyuki, Go Noya
  • RINSING LIQUID FOR LITHOGRAPHY AND PATTERN FORMING METHOD USING SAME
    Publication number: 20160109805
    Abstract: Disclosed are a rinse solution for lithography comprising water and a nonionic surfactant represented by the formula (I) (R1 and R2 may be the same as or different from each other and represent a hydrogen atom or a methyl group, R3 and R4 may be the same as or different from each other and represent a hydrogen atom, a methyl group or an ethyl group, R5 represents a hydrocarbon group having 2 to 5 carbon atoms, in which one or more of a double bond or triple bond are contained, or a phenylene group, and R6 and R7 may be the same as or different from each other and represent a hydrogen atom or a methyl group) and a method for forming a resist pattern by rinsing the resist pattern obtained by exposing and developing a photosensitive resist with the rinse solution for lithography described above.
    Type: Application
    Filed: May 1, 2014
    Publication date: April 21, 2016
    Inventors: Yuriko MATSUURA, Sara TSUYUKI, Go NOYA