Patents by Inventor Sarah A. Huffsmith

Sarah A. Huffsmith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-layered substrates of semiconductor devices
    Patent number: 11502106
    Abstract: A semiconductor device is provided, which includes a multi-layered substrate having an interposed polymeric film and a device layer arranged over the multi-layered substrate.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: November 15, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Benjamin Vito Fasano, Koushik Ramachandran, Ian Douglas Walter Melville, Sarah Huffsmith Knickerbocker, Jorge Lubguban
  • MULTI-LAYERED SUBSTRATES OF SEMICONDUCTOR DEVICES
    Publication number: 20210249442
    Abstract: A semiconductor device is provided, which includes a multi-layered substrate having an interposed polymeric film and a device layer arranged over the multi-layered substrate.
    Type: Application
    Filed: February 11, 2020
    Publication date: August 12, 2021
    Inventors: BENJAMIN VITO FASANO, KOUSHIK RAMACHANDRAN, IAN Douglas Walter MELVILLE, SARAH HUFFSMITH KNICKERBOCKER, JORGE LUBGUBAN
  • Universal cost reduced substrate structure method and apparatus
    Patent number: 5946552
    Abstract: A universal substrate includes an input/output (I/O) layer having a fixed I/O assignment of I/O locations for connection with a printed circuit board or the like. A chip receiving layer is provided for receiving one of at least two different but allied semiconductor chips, wherein each of the at least two different but allied chips include a set of bond pads and have a unique wire-out requirement. A first layer includes a plurality of bond pads and vias, the plurality of bond pads including at least two sets of bond pads, wherein each set is adapted for bond connection with a respective one of the at least two different semiconductor chips when received by said receiving means and further in accordance with a respective wire-out requirement.
    Type: Grant
    Filed: August 20, 1996
    Date of Patent: August 31, 1999
    Assignee: International Business Machines Corporation
    Inventors: Kenneth Alfred Bird, Myra Muth Boenke, Jason Lee Frankel, Sarah Huffsmith Knickerbocker, Ahmed Sayeed Shah
  • Electronic component package with decoupling capacitors completely within die receiving cavity of substrate
    Patent number: 5831810
    Abstract: An electronic component package comprising a substrate having at least one die-receiving cavity formed therein, the cavity being defined by a die-receiving surface and an inner sidewall having a terraced contour, the substrate having an exterior surface bordering the cavity perimeter, the inner sidewall extending between the die-receiving surface and the substrate exterior surface, and at least one capacitor positioned completely within the cavity and mounted to the terraced contour of the inner sidewall.
    Type: Grant
    Filed: August 21, 1996
    Date of Patent: November 3, 1998
    Assignee: International Business Machines Corporation
    Inventors: Kenneth A. Bird, Peter J. Brofman, Francis F. Cappo, Jr., Jason L. Frankel, Suresh D. Kadakia, Sarah Huffsmith Knickerbocker, Scott A. Sikorski
  • Silicon-nitride and metal composite
    Patent number: 4293619
    Abstract: A composite and a method for bonding the composite. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi.sub.2 indirectly bonding the composite together. The method includes contacting the layer of MoSi.sub.2 with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400.degree. C.; and, simultaneously with the heating, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.
    Type: Grant
    Filed: June 11, 1979
    Date of Patent: October 6, 1981
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Richard L. Landingham, Sarah A. Huffsmith