Patents by Inventor Sarah E. Mastroianni

Sarah E. Mastroianni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BONDING DISSIMILAR MATERIALS USING RADIO FREQUENCY WAVE CURING
    Publication number: 20230279276
    Abstract: A method is provided for bonding substrates having dissimilar coefficients of thermal expansion, using a thermoset adhesive. The method involves a pre-cure step using radio-frequency energy, followed by a heat-curing step.
    Type: Application
    Filed: July 13, 2021
    Publication date: September 7, 2023
    Inventors: Micah J. Green, Jacob T. Gruener, Aniruddh Vashisth, Tyler J. Auvil, Daniel P. Sophiea, Sarah E. Mastroianni
  • High planarization efficiency chemical mechanical polishing pads and methods of making
    Patent number: 10086494
    Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: October 2, 2018
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Jonathan G. Weis, George C. Jacob, Bhawesh Kumar, Sarah E. Mastroianni, Wenjun Xu, Nan-Rong Chiou, Mohammad T. Islam
  • HIGH PLANARIZATION EFFICIENCY CHEMICAL MECHANICAL POLISHING PADS AND METHODS OF MAKING
    Publication number: 20180071888
    Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
    Type: Application
    Filed: September 13, 2016
    Publication date: March 15, 2018
    Inventors: Jonathan G. Weis, George C. Jacob, Bhawesh Kumar, Sarah E. Mastroianni, Wenjun Xu, Nan-Rong Chiou, Mohammad T. Islam