Patents by Inventor Sarah L. Grunow

Sarah L. Grunow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Interconnect structures and design structures for a radiofrequency integrated circuit
    Patent number: 8791545
    Abstract: Interconnect structures that include a passive element, such as a thin film resistor or a metal-insulator-metal (MIM) capacitor, methods for fabricating an interconnect structure that includes a passive element, and design structures embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, such as a radiofrequency integrated circuit. A top surface of a dielectric layer is recessed relative to a top surface of a conductive feature in the dielectric layer. The passive element is formed on the recessed top surface of the dielectric layer and includes a layer of a conductive material that is coplanar with, or below, the top surface of the conductive feature.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: July 29, 2014
    Assignee: International Business Machines Corporation
    Inventors: Timothy J. Dalton, Ebenezer E. Eshun, Sarah L. Grunow, Zhong-Xiang He, Anthony K. Stamper
  • INTERCONNECT STRUCTURES AND DESIGN STRUCTURES FOR A RADIOFREQUENCY INTEGRATED CIRCUIT
    Publication number: 20120292741
    Abstract: Interconnect structures that include a passive element, such as a thin film resistor or a metal-insulator-metal (MIM) capacitor, methods for fabricating an interconnect structure that includes a passive element, and design structures embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, such as a radiofrequency integrated circuit. A top surface of a dielectric layer is recessed relative to a top surface of a conductive feature in the dielectric layer. The passive element is formed on the recessed top surface of the dielectric layer and includes a layer of a conductive material that is coplanar with, or below, the top surface of the conductive feature.
    Type: Application
    Filed: July 27, 2012
    Publication date: November 22, 2012
    Applicant: International Business Machines Corporation
    Inventors: Timothy Dalton, Ebenezer E. Eshun, Sarah L. Grunow, Zhong-Xiang He, Anthony K. Stamper
  • Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit
    Patent number: 8298902
    Abstract: Interconnect structures that include a passive element, such as a thin film resistor or a metal-insulator-metal (MIM) capacitor, methods for fabricating an interconnect structure that includes a passive element, and design structures embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, such as a radiofrequency integrated circuit. A top surface of a dielectric layer is recessed relative to a top surface of a conductive feature in the dielectric layer. The passive element is formed on the recessed top surface of the dielectric layer and includes a layer of a conductive material that is coplanar with, or below, the top surface of the conductive feature.
    Type: Grant
    Filed: December 10, 2009
    Date of Patent: October 30, 2012
    Assignee: International Business Machines Corporation
    Inventors: Timothy J. Dalton, Ebenezer E. Eshun, Sarah L. Grunow, Zhong-Xiang He, Anthony K. Stamper
  • Interconnect Structures, Methods for Fabricating Interconnect Structures, and Design Structures for a Radiofrequency Integrated Circuit
    Publication number: 20100237467
    Abstract: Interconnect structures that include a passive element, such as a thin film resistor or a metal-insulator-metal (MIM) capacitor, methods for fabricating an interconnect structure that includes a passive element, and design structures embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, such as a radiofrequency integrated circuit. A top surface of a dielectric layer is recessed relative to a top surface of a conductive feature in the dielectric layer. The passive element is formed on the recessed top surface of the dielectric layer and includes a layer of a conductive material that is coplanar with, or below, the top surface of the conductive feature.
    Type: Application
    Filed: December 10, 2009
    Publication date: September 23, 2010
    Applicant: International Business Machines Corporation
    Inventors: Timothy Dalton, Ebenezer E. Eshun, Sarah L. Grunow, Zhong-Xiang He, Anthony K. Stamper