Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support.

Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.

Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.

Abstract: One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.

Abstract: Embodiments described herein relate to methods and tools for monitoring electrostatic chucking performance. A performance test is performed that requires only one bowed substrate and one reference substrate. To run the test, the reference substrate is positioned on an electrostatic chuck in a process chamber and the bowed substrate is positioned on the reference substrate. A voltage is applied from a power source to the electrostatic chuck, generating an electrostatic chucking force to secure the bowed substrate to the reference substrate. Thereafter, the applied voltage is decreased incrementally until the electrostatic chucking force is too weak to maintain the bowed substrate in flat form, resulting in dechucking of the bowed wafer. By monitoring the impedance of the chamber during deposition using a sensor, the dechucking threshold voltage can be identified at the point where the impedance of the reference substrate and the impedance of the bowed substrate deviates.

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.

Abstract: A method of cleaning a component of a semiconductor processing chamber is provided. The method includes exposing residue in a component to a process plasma containing a nitrogen-containing gas and an oxygen-containing gas. The residue in the component undergoes a chemical reaction, cleaning the component. The component is cleaned, restoring the component to the conditions before the process chemistry is run.

Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.