Patents by Inventor Sarath Witanachchi
Sarath Witanachchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140001435Abstract: Electroluminescent devices, methods of forming the same, and methods of generating light using the same are provided. An electroluminescent device can include an active layer and at least one p-n junction in physical contact with the active layer. Each p-n junction can include a p-type semiconductor layer and an n-type semiconductor layer.Type: ApplicationFiled: July 1, 2013Publication date: January 2, 2014Inventor: Sarath Witanachchi
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Patent number: 8211400Abstract: The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136?yGey, where y indicates the number of Ge atoms present in the main framework and 136?y indicates the number of Si atoms present in the main framework, and wherein y>0.Type: GrantFiled: April 23, 2009Date of Patent: July 3, 2012Assignee: University of South FloridaInventors: George S. Nolas, Sarath Witanachchi, Pritish Mukherjee
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Publication number: 20090263958Abstract: The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136-yGey, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.Type: ApplicationFiled: April 23, 2009Publication date: October 22, 2009Applicant: UNIVERSITY OF SOUTH FLORIDAInventors: George S. Nolas, Sarath Witanachchi, Pritish Mukherjee
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Patent number: 7534414Abstract: The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136-yGey, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.Type: GrantFiled: April 16, 2008Date of Patent: May 19, 2009Assignee: University of South FloridaInventors: George S. Nolas, Sarath Witanachchi, Pritish Mukherjee
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Publication number: 20080226836Abstract: The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136-yGey, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.Type: ApplicationFiled: April 16, 2008Publication date: September 18, 2008Applicant: UNIVERSITY OF SOUTH FLORIDAInventors: George S. Nolas, Sarath Witanachchi, Pritish Mukherjee
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Patent number: 6697557Abstract: An optical filter includes an input optical fiber bundle and an output fiber bundle. Each of the bundles has one end having the fiber ends substantially two-dimensionally arrayed and another end substantially linearly arrayed. Each input fiber is configured to receive a portion of a two-dimensional input image at the two-dimensional end and transmit the image portion to the one-dimensional end. A spectrally dispersive element receives the image portions from the input fiber bundle and outputs a predetermined spectral component to the output optical fiber bundle at the one-dimensional end, transmitting the image portion to the two-dimensional end. The output fiber bundle two-dimensional ends are arrayed in corresponding fashion to the first ends of the input fibers for spatially reconstructing the input image.Type: GrantFiled: October 4, 2001Date of Patent: February 24, 2004Assignee: University of South FloridaInventors: Pritish Mukherjee, Sarath Witanachchi
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Publication number: 20020067901Abstract: An optical filter includes an input optical fiber bundle and an output fiber bundle. Each of the bundles has one end having the fiber ends substantially two-dimensionally arrayed and another end substantially linearly arrayed. Each input fiber is configured to receive a portion of a two-dimensional input image at the two-dimensional end and transmit the image portion to the one-dimensional end. A spectrally dispersive element receives the image portions from the input fiber bundle and outputs a predetermined spectral component to the output optical fiber bundle at the one-dimensional end, transmitting the image portion to the two-dimensional end. The output fiber bundle two-dimensional ends are arrayed in corresponding fashion to the first ends of the input fibers for spatially reconstructing the input image.Type: ApplicationFiled: October 4, 2001Publication date: June 6, 2002Inventors: Pritish Mukherjee, Sarath Witanachchi
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Patent number: 5660746Abstract: The present invention provides a dual-laser deposition process for thin film deposition. Specifically, the present invention provides a method of laser deposition for the growth of in-situ particulate free films. The preferred embodiment includes the spatial overlap on a target of two laser pulses of different wavelengths such that the ejection of the particulates and its subsequent deposition on a substrate during film growth is controlled and essentially eliminated by a suitable temporal delay between the two laser pulses. The present invention enhances the species kinetic energy in the laser-ablated plume via enhanced plume excitation. This allows the reduction of substrate temperature for epitaxial film growth as a result of the increased species mobility on the substrate due to enhanced plume excitation. Also, the ionization in the plume is enhanced. This is important both for enhanced gas phase reactions and for oriented film growth, leading to epitaxy, on the substrate.Type: GrantFiled: October 24, 1994Date of Patent: August 26, 1997Assignee: University of South FloridaInventors: Sarath Witanachchi, Pritish Mukherjee
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Patent number: 4874741Abstract: The present invention relates to a method of directly forming a thin, orientated layer, or film, of superconducting materials, suitably mixtures of Pervoskite-type superconducting oxides, on a support base, or substrate, by depositing the layer, or film, in an ionized oxygen atmosphere using a laser beam means. The present process is carried out at temperatures sufficiently high that the film adheres to the substrate, but sufficiently low that a superconducting layer is directly deposited the substrate. Preferably the process is carried out at a temperature less than about 450 degrees C. Temperatures as low as 400 degrees C. have been found useful.Type: GrantFiled: April 14, 1988Date of Patent: October 17, 1989Assignee: The Research Foundation of State University of New YorkInventors: David T. Shaw, Sarath Witanachchi, Hoi-Sing Kwok