Patents by Inventor Sarbeswar Sahoo
Sarbeswar Sahoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11162169Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.Type: GrantFiled: December 24, 2019Date of Patent: November 2, 2021Assignee: Seagate Technology LLCInventors: Tong Zhao, Michael C. Kautzky, Sarbeswar Sahoo, Justin Brons, Jie Gong, Yuhang Cheng
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Patent number: 11107499Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.Type: GrantFiled: November 19, 2019Date of Patent: August 31, 2021Assignee: Seagate Technology LLCInventors: Yuhang Cheng, Tong Zhao, Michael C. Kautzky, Ed F. Rejda, Kurt W. Wierman, Scott Franzen, Sethuraman Jayashankar, Sarbeswar Sahoo, Jie Gong, Michael Allen Seigler
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Patent number: 10971180Abstract: A method of forming a near field transducer (NFT), the method including the steps of depositing a primary material; and implanting a secondary element, wherein both the primary material and the secondary element are chosen such that the primary material is densified via implantation of the secondary element.Type: GrantFiled: June 30, 2017Date of Patent: April 6, 2021Assignee: Seagate Technology LLCInventors: Sethuraman Jayashankar, Sarbeswar Sahoo
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Patent number: 10964347Abstract: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbiumType: GrantFiled: November 21, 2016Date of Patent: March 30, 2021Assignee: Seagate Technology LLCInventors: Yuhang Cheng, Tong Zhao, Michael C. Kautzky, Ed F. Rejda, Kurt W. Wierman, Scott Franzen, Sethuraman Jayashankar, Sarbeswar Sahoo, Justin Glen Brons, Steve C. Riemer, Jie Gong, Michael Allen Seigler
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Publication number: 20210090774Abstract: Methods of forming a layer of magnetic material on a substrate, the method including: configuring a substrate in a chamber; controlling the temperature of the substrate at a substrate temperature, the substrate temperature being at or below about 250° C.; and introducing one or more precursors into the chamber, the one or more precursors including: cobalt (Co), nickel (Ni), iron (Fe), or combinations thereof, wherein the precursors chemically decompose at the substrate temperature, and wherein a layer of magnetic material is formed on the substrate, the magnetic material including at least a portion of the one or more precursors, and the magnetic material having a magnetic flux density of at least about 1 Tesla (T).Type: ApplicationFiled: August 11, 2020Publication date: March 25, 2021Inventors: Sarbeswar Sahoo, Meng Zhu, Michael C. Kautzky, Gregory Girolami, John Abelson, Pengyi Zhang, Shaista Babar
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Publication number: 20200224307Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.Type: ApplicationFiled: December 24, 2019Publication date: July 16, 2020Inventors: Tong Zhao, Michael C. Kautzky, Sarbeswar Sahoo, Justin Brons, Jie Gong, Yuhang Cheng
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Publication number: 20200227086Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.Type: ApplicationFiled: November 19, 2019Publication date: July 16, 2020Inventors: Yuhang Cheng, Tong Zhao, Michael C. Kautzky, Ed F. Rejda, Kurt W. Wierman, Scott Franzen, Sethuraman Jayashankar, Sarbeswar Sahoo, Jie Gong, Michael Allen Seigler
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Patent number: 10699732Abstract: Devices that include a write pole; a near field transducer (NFT) that includes a peg and a disk, wherein the peg is at the ABS of the device; and a diffusion barrier layer positioned between the write pole and the peg of the NFT, the diffusion barrier layer including metals, nitrides, oxides, carbides, silicides, or amorphous material.Type: GrantFiled: November 30, 2017Date of Patent: June 30, 2020Assignee: Seagate Technology LLCInventors: Yuhang Cheng, Scott Franzen, Michael Seigler, James Wessel, Tong Zhao, John Duda, Sarbeswar Sahoo, Hui Brickner, Michael Kautzky
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Patent number: 10699740Abstract: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbiumType: GrantFiled: November 21, 2016Date of Patent: June 30, 2020Assignee: Seagate Technology LLCInventors: Yuhang Cheng, Tong Zhao, Michael C. Kautzky, Ed F. Rejda, Kurt W. Wierman, Scott Franzen, Sethuraman Jayashankar, Sarbeswar Sahoo, Justin Glen Brons, Steve C. Riemer, Jie Gong, Michael Allen Seigler
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Publication number: 20200118587Abstract: Devices that include a near field transducer (NFT) including a crystalline plasmonic material having crystal grains and grain boundaries; and nanoparticles disposed in the crystal grains, on the grain boundaries, or some combination thereof, wherein the nanoparticles are oxides of, lanthanum (La), barium (Ba), strontium (Sr), erbium (Er), hafnium (Hf), germanium (Ge), or combinations thereof; nitrides of zirconium (Zr), niobium (Nb), or combinations thereof; or carbides of silicon (Si), aluminum (Al), boron (B), zirconium (Zr), tungsten (W), titanium (Ti), niobium (Nb), or combinations thereof.Type: ApplicationFiled: December 16, 2019Publication date: April 16, 2020Inventors: Tong Zhao, Justin Brons, Steven C. Riemer, Michael C. Kautzky, Xiaoyue Huang, Sarbeswar Sahoo
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Patent number: 10580440Abstract: Devices having an air bearing surface (ABS), the devices including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg is at the ABS of the device; a heat sink positioned adjacent the disc of the NFT; a dielectric gap positioned adjacent the peg of the NFT at the ABS of the device; and a conformal diffusion barrier layer positioned between the write pole and the dielectric gap, the disc, and the heat sink, wherein the conformal diffusion barrier layer forms at least one angle that is not greater than 135°.Type: GrantFiled: January 29, 2019Date of Patent: March 3, 2020Assignee: Seagate Technology LLCInventors: Sarbeswar Sahoo, Martin Blaber, Hui Brickner, Tong Zhao, Yuhang Cheng, John Duda, Tae-Woo Lee
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Patent number: 10519540Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.Type: GrantFiled: January 29, 2019Date of Patent: December 31, 2019Assignee: Seagate Technology LLCInventors: Tong Zhao, Michael C. Kautzky, Sarbeswar Sahoo, Justin Brons, Jie Gong, Yuhang Cheng
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Patent number: 10510364Abstract: Devices that include a near field transducer (NFT) including a crystalline plasmonic material having crystal grains and grain boundaries; and nanoparticles disposed in the crystal grains, on the grain boundaries, or some combination thereof, wherein the nanoparticles are oxides of, lanthanum (La), barium (Ba), strontium (Sr), erbium (Er), hafnium (Hf), germanium (Ge), or combinations thereof; nitrides of zirconium (Zr), niobium (Nb), or combinations thereof; or carbides of silicon (Si), aluminum (Al), boron (B), zirconium (Zr), tungsten (W), titanium (Ti), niobium (Nb), or combinations thereof.Type: GrantFiled: November 9, 2015Date of Patent: December 17, 2019Assignee: Seagate Technology LLCInventors: Tong Zhao, Justin Brons, Steven C. Riemer, Michael C. Kautzky, Xiaoyue Huang, Sarbeswar Sahoo
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Patent number: 10482914Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.Type: GrantFiled: April 13, 2018Date of Patent: November 19, 2019Assignee: Seagate Technology LLCInventors: Yuhang Cheng, Tong Zhao, Michael C. Kautzky, Ed F. Rejda, Kurt W. Wierman, Scott Franzen, Sethuraman Jayashankar, Sarbeswar Sahoo, Jie Gong, Michael Allen Seigler
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Publication number: 20190164570Abstract: Devices having an air bearing surface (ABS), the devices including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg is at the ABS of the device; a heat sink positioned adjacent the disc of the NFT; a dielectric gap positioned adjacent the peg of the NFT at the ABS of the device; and a conformal diffusion barrier layer positioned between the write pole and the dielectric gap, the disc, and the heat sink, wherein the conformal diffusion barrier layer forms at least one angle that is not greater than 135°.Type: ApplicationFiled: January 29, 2019Publication date: May 30, 2019Inventors: Sarbeswar Sahoo, Martin Blaber, Hui Brickner, Tong Zhao, Yuhang Cheng, John Duda, Tae-Woo Lee
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Publication number: 20190153590Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.Type: ApplicationFiled: January 29, 2019Publication date: May 23, 2019Inventors: Tong Zhao, Michael C. Kautzky, Sarbeswar Sahoo, Justin Brons, Jie Gong, Yuhang Cheng
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Patent number: 10217482Abstract: Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: yttrium (Y), tin (Sn), iron (Fe), copper (Cu), carbon (C), holmium (Ho), gallium (Ga), silver (Ag), ytterbium (Yb), chromium (Cr), tantalum (Ta), iridium (Ir), zirconium (Zr), yttrium (Y), scandium (Sc), cobalt (Co), silicon (Si), nickel (Ni), molybdenum (Mo), niobium (Nb), palladium (Pd), titanium (Ti), rhenium (Re), osmium (Os), platinum (Pt), aluminum (Al), ruthenium (Ru), rhodium (Rh), vanadium (V), germanium (Ge), tin (Sn), magnesium (Mg), iron (Fe), copper (Cu), tungsten (W), hafnium (Hf), carbon (C), boron (B), holmium (Ho), antimony (Sb), gallium (Ga), manganese (Mn), silver (Ag), indium (In), bismuth (Bi), zinc (Zn), ytterbium (Yb), and combinations thereof.Type: GrantFiled: May 26, 2017Date of Patent: February 26, 2019Assignee: Seagate Technology LLCInventors: Vijay Karthik Sankar, Tong Zhao, Yongjun Zhao, Michael C. Kautzky, Hui Brickner, Sarbeswar Sahoo
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Patent number: 10192574Abstract: Devices having an air bearing surface (ABS), the devices including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg is at the ABS of the device; a heat sink positioned adjacent the disc of the NFT; a dielectric gap positioned adjacent the peg of the NFT at the ABS of the device; and a conformal diffusion barrier layer positioned between the write pole and the dielectric gap, the disc, and the heat sink, wherein the conformal diffusion barrier layer forms at least one angle that is not greater than 135°.Type: GrantFiled: October 13, 2017Date of Patent: January 29, 2019Assignee: Seagate Technology LLCInventors: Sarbeswar Sahoo, Martin Blaber, Hui Brickner, Tong Zhao, Yuhang Cheng, John Duda, Tae-Woo Lee
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Patent number: 10190210Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.Type: GrantFiled: November 20, 2017Date of Patent: January 29, 2019Assignee: Seagate Technology LLCInventors: Tong Zhao, Michael C. Kautzky, Sarbeswar Sahoo, Justin Brons, Jie Gong, Yuhang Cheng
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Publication number: 20180366153Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.Type: ApplicationFiled: April 13, 2018Publication date: December 20, 2018Inventors: Yuhang Cheng, Tong Zhao, Michael C. Kautzky, Ed F. Rejda, Kurt W. Wierman, Scott Franzen, Sethuraman Jayashankar, Sarbeswar Sahoo, Jie Gong, Michael Allen Seigler