Abstract: An integrated nucleation and bulk deposition process is disclosed for forming a CVD metal film over a semiconductor substrate that has structures formed thereon. In the integrated deposition process of the present invention, nucleation seed deposition and bulk deposition are performed in an integrated and contemporaneous manner. In one embodiment, a reactant gas and a reducing agent gas flow into a pressurized reaction chamber. As the integrated deposition process progresses, pressure and flow of reactant gas are increased while flow of reducing agent gas is decreased. The integrated deposition process of the present invention gives a significant decrease in process time as compared to prior art processes. Moreover, the integrated deposition process of the present invention gives good fill characteristics while providing sufficient protection to underlying structures.

Abstract: An integrated nucleation and bulk deposition process is disclosed for forming a CVD metal film over a semiconductor substrate that has structures formed thereon. In the integrated deposition process of the present invention, nucleation seed deposition and bulk deposition are performed in an integrated and contemporaneous manner. In one embodiment, a reactant gas and a reducing agent gas flow into a pressurized reaction chamber. As the integrated deposition process progresses, pressure and flow of reactant gas are increased while flow of reducing agent gas is decreased. The integrated deposition process of the present invention gives a significant decrease in process time as compared to prior art processes. Moreover, the integrated deposition process of the present invention gives good fill characteristics while providing sufficient protection to underlying structures.