Abstract: An ion source includes a chamber having a first end, a second end opposite the first end, a first wall extending from the first end to the second end, and a second wall opposite the first wall. The ion source also includes a source filament at the first end of the chamber and configured to emit electrons and a first amount of heat, a beam aperture at the second wall of the chamber, and one or more heaters positioned within the chamber and between the second end and the beam aperture and operable to provide a second amount of heat. The one or more heaters are positioned and operable such that the second amount of heat balances the first amount of heat to reduce or eliminate a temperature gradient in the chamber.

Abstract: A method that includes accelerating ions toward a lattice of carbon fibers and capturing the ions in the lattice of carbon fibers.

Abstract: A system includes an ion source configured to generate ions having a first polarity, one or more extraction electrodes configured to extract the ions from the ion source as an ion beam having an extraction energy, a mass resolving slit or aperture configured to select a desired isotope from the ion beam such that a desired isotopic ion beam passes through the mass resolving slit or aperture, a target positioned relative to the mass resolving slit or aperture so that the desired isotopic ion beam is incident on the target, and a voltage source coupled to the target and configured to hold the target at a first voltage having the first polarity. The first voltage causes a reduction of the extraction energy as the desired isotopic ion beam approaches the target to minimize sputtering and maximize collection of the ions on the target to reconstitute an ionized material.

Abstract: Provided herein are ion-implanted glass based articles with improved flaw suppression properties. The ion-implanted glass based articles generally have a final indent fracture threshold (IFT) load of at least 650 grams, and/or a scratch threshold force of at least 10 N, which represents at least 1.25-fold enhancement compared to the glass based article prior to ion-implantation. Factors affecting the efficacy of the ion implantation process can include the IFT load of the starting glass or glass ceramic substrate (native IFT load), ion type, ion dose, implant energy, beam current, and glass temperature.

Abstract: Provided herein are ion-implanted glass based articles with improved flaw suppression properties. The ion-implanted glass based articles generally have a final indent fracture threshold (IFT) load of at least 650 grams, and/or a scratch threshold force of at least 10 N, which represents at least 1.25-fold enhancement compared to the glass based article prior to ion-implantation. Factors affecting the efficacy of the ion implantation process can include the IFT load of the starting glass or glass ceramic substrate (native IFT load), ion type, ion dose, implant energy, beam current, and glass temperature.

Abstract: A method for finishing an edge of a glass laminate structure comprising the steps of assembling a glass laminate structure having a first glass sheet, a second glass sheet and an interlayer material intermediate the first and second glass sheets and placing a compressive material on a first edge of the assembled structure. A vacuum can be applied to a second edge of the assembled structure and the assembled structure heated to a predetermined temperature at or above a softening temperature of the interlayer material. The vacuum and temperature can be maintained for a predetermined period of time whereby the compressive material provides an in situ finish for the first edge of the glass laminate structure.

Abstract: A lighting fixture having a glass structure having a first sheet of fusion drawn, chemically strengthened glass, a clear sheet element, a diffusing element having a first surface and a second surface, and a light source situated along one or more edges of the clear sheet element to thereby direct light into the clear sheet element. Another lighting fixture having an acrylic sheet with dispersive particles embedded therein that transfer light perpendicular to an axis of injection of the dispersive particles, the acrylic sheet having a first surface and a second surface. This lighting fixture also includes a first sheet of fusion drawn, chemically strengthened glass positioned on the first surface and a light source situated along one or more edges of the acrylic sheet to thereby direct light into the clear sheet element.

Abstract: A multi-layer glass structure is provided having n layers of annealed or chemically strengthened glass and n?1 layers of a polymer interlayer where n is a positive integer greater than 2. In another embodiment, a glass laminate structure is provided having a plurality of annealed or chemically strengthened glass sheets, one or more polymeric interlayers positioned between adjacent annealed or chemically strengthened glass sheets, and a thin annealed or chemically strengthened glass sheet on a first side of the glass laminate structure.

Abstract: Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.

Abstract: Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract: Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.

Abstract: Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.

Abstract: Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.

Abstract: Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

Abstract: Methods and apparatus provide for: a first source of plasma (first plasma), which includes a first species of ions, directing the first plasma out along a first axis; a second source of plasma (second plasma), which includes a second, differing, species of ions, directing the second plasma out along a second axis; and an accelerator system in communication with the first and second sources of plasma, and operating to: (i) accelerate the first species of ions at a first magnitude therethrough, and toward a semiconductor wafer, and (ii) simultaneously accelerate the second species of ions at a second magnitude, different from the first magnitude, therethrough, and toward the semiconductor wafer.

Abstract: Methods and apparatus for producing a semiconductor structure include: subjecting an implantation surface of a semiconductor wafer to an ion implantation process to create an exfoliation layer therein, wherein the ion implantation process includes simultaneously implanting two different species of ions into the implantation surface of the semiconductor wafer.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.