Abstract: A system and method for packaging a semiconductor device that includes a wall to reduce electromagnetic coupling is presented. A semiconductor device has a substrate on which a first circuit and a second circuit are formed proximate to each other. An isolation wall of electrically conductive material is located between the first circuit and the second circuit, the isolation wall being configured to reduce inductive coupling between the first and second circuits during an operation of the semiconductor device. Several types of isolation walls are presented.

Abstract: A system and method for packaging a semiconductor device that includes a wall to reduce electromagnetic coupling is presented. A semiconductor device has a substrate on which a first circuit and a second circuit are formed proximate to each other. An isolation wall of electrically conductive material is located between the first circuit and the second circuit, the isolation wall being configured to reduce inductive coupling between the first and second circuits during an operation of the semiconductor device. Several types of isolation walls are presented.

Abstract: A system and method for packaging a semiconductor device that includes a wall to reduce electromagnetic coupling is presented. A semiconductor device has a substrate on which a first circuit and a second circuit are formed proximate to each other. An isolation wall of electrically conductive material is located between the first circuit and the second circuit, the isolation wall being configured to reduce inductive coupling between the first and second circuits during an operation of the semiconductor device. Several types of isolation walls are presented.

Abstract: A system and method for packaging a semiconductor device that includes a wall to reduce electromagnetic coupling is presented. A semiconductor device has a substrate on which a first circuit and a second circuit are formed proximate to each other. An isolation wall of electrically conductive material is located between the first circuit and the second circuit, the isolation wall being configured to reduce inductive coupling between the first and second circuits during an operation of the semiconductor device. Several types of isolation walls are presented.

Abstract: A system and method for packaging a semiconductor device that includes a wall to reduce electromagnetic coupling is presented. A semiconductor device has a substrate on which a first circuit and a second circuit are formed proximate to each other. An isolation wall of electrically conductive material is located between the first circuit and the second circuit, the isolation wall being configured to reduce inductive coupling between the first and second circuits during an operation of the semiconductor device. Several types of isolation walls are presented.

Abstract: A device includes a first amplifier coupled to a first signal conduction path and a second amplifier coupled to a second signal conduction path. A first coupler is coupled to the first signal conduction path. The first coupler is configured to produce an output signal based on a first signal carried by the first signal conduction path. A delay element is configured to impose a phase delay on the output signal of the first coupler to generate a delayed output signal. The device includes a second coupler coupled to the second signal conduction path. The second coupler is connected to the delay element and configured to inject the delayed output signal into the second signal conduction path.

Abstract: A device includes a first amplifier coupled to a first signal conduction path and a second amplifier coupled to a second signal conduction path. A first coupler is coupled to the first signal conduction path. The first coupler is configured to produce an output signal based on a first signal carried by the first signal conduction path. A delay element is configured to impose a phase delay on the output signal of the first coupler to generate a delayed output signal. The device includes a second coupler coupled to the second signal conduction path. The second coupler is connected to the delay element and configured to inject the delayed output signal into the second signal conduction path.

Abstract: A system and method for packaging a semiconductor device that includes a wall to reduce electromagnetic coupling is presented. A semiconductor device has a substrate on which a first circuit and a second circuit are formed proximate to each other. An isolation wall of electrically conductive material is located between the first circuit and the second circuit, the isolation wall being configured to reduce inductive coupling between the first and second circuits during an operation of the semiconductor device. Several types of isolation walls are presented.

Abstract: A system and method for packaging a semiconductor device that includes a wall to reduce electromagnetic coupling is presented. A semiconductor device has a substrate on which a first circuit and a second circuit are formed proximate to each other. An isolation wall of electrically conductive material is located between the first circuit and the second circuit, the isolation wall being configured to reduce inductive coupling between the first and second circuits during an operation of the semiconductor device. Several types of isolation walls are presented.

Abstract: A device and a method for an amplifier having reduced intermodulation (IM) distortion output products are presented. An amplifier has an output, and at least one of a gate bias input and a drain supply input. The amplifier is configured to receive an input signal and output an amplified signal at the output of the amplified. An input is configured to receive an envelope signal. The input is connected to the at least one of the gate bias input and the drain supply input and the envelope signal is at least partially determined by an attribute of the input signal to the amplifier. A controller is configured to modify at least one of an amplitude and a phase of the envelope signal to reduce a magnitude of an intermodulation distortion product of the amplifier.

Abstract: An embodiment of a packaged radio frequency (RF) device includes a device substrate with a voltage reference plane, a first input lead coupled to the device substrate, a first output lead coupled to the device substrate, a first transistor die coupled to a top surface of the device substrate with a solder bond, a second die coupled to the top surface of the device substrate with a conductive epoxy that electrically couples at least one component of the second die to the voltage reference plane, and non-conductive molding compound over the top surface of the device substrate and encompassing the first transistor die, the second die, a portion of the first input lead, and a portion of the first output lead.

Abstract: Embodiments of an integrated resistor may be incorporated into monolithic transistor circuits and packaged RF amplifier devices. An embodiment of an integrated resistor includes a semiconductor substrate and a resistor formed over the top surface of the semiconductor substrate from resistive material. The resistor includes at least first and second resistive sections. The first resistive section is tapered so that the first resistive section widens toward an input end of the resistor. The second resistive section is coupled in series with the first resistive section. According to a further embodiment, the second resistive section also is tapered so that the second resistive section widens toward an output end of the resistor. According to another further embodiment, a third resistive section with one or more meanders is coupled in series between the first and second resistive sections.

Abstract: An embodiment of a packaged radio frequency (RF) device includes a device substrate with a voltage reference plane, a first input lead coupled to the device substrate, a first output lead coupled to the device substrate, a first transistor die coupled to a top surface of the device substrate with a solder bond, a second die coupled to the top surface of the device substrate with a conductive epoxy that electrically couples at least one component of the second die to the voltage reference plane, and non-conductive molding compound over the top surface of the device substrate and encompassing the first transistor die, the second die, a portion of the first input lead, and a portion of the first output lead.

Abstract: Embodiments of an integrated resistor may be incorporated into monolithic transistor circuits and packaged RF amplifier devices. An embodiment of an integrated resistor includes a semiconductor substrate and a resistor formed over the top surface of the semiconductor substrate from resistive material. The resistor includes at least first and second resistive sections. The first resistive section is tapered so that the first resistive section widens toward an input end of the resistor. The second resistive section is coupled in series with the first resistive section. According to a further embodiment, the second resistive section also is tapered so that the second resistive section widens toward an output end of the resistor. According to another further embodiment, a third resistive section with one or more meanders is coupled in series between the first and second resistive sections.

Abstract: A device and a method for an amplifier having reduced intermodulation (IM) distortion output products are presented. An amplifier has an output, and at least one of a gate bias input and a drain supply input. The amplifier is configured to receive an input signal and output an amplified signal at the output of the amplified. An input is configured to receive an envelope signal. The input is connected to the at least one of the gate bias input and the drain supply input and the envelope signal is at least partially determined by an attribute of the input signal to the amplifier. A controller is configured to modify at least one of an amplitude and a phase of the envelope signal to reduce a magnitude of an intermodulation distortion product of the amplifier.

Abstract: A system and method for packaging a semiconductor device that includes a wall to reduce electromagnetic coupling is presented. A semiconductor device has a substrate on which a first circuit and a second circuit are formed proximate to each other. An isolation wall of electrically conductive material is located between the first circuit and the second circuit, the isolation wall being configured to reduce inductive coupling between the first and second circuits during an operation of the semiconductor device. Several types of isolation walls are presented.

Abstract: In one illustrative example, a technique in a server to facilitate a re-establishing of communication over a data connection between an application server and a wireless communication device which communicates via a base station of a wireless communication network is described. In response to a communication loss between the wireless device and the wireless network which causes the data connection to be terminated, the server receives from the application server a plurality of connection requests which are intended for receipt by the wireless device for re-establishing the data connection. The server operates to limit the number or a rate of the connection requests allowed to pass from the server to the base station of the wireless network during the communication loss between the wireless device and the wireless network.

Abstract: In one illustrative example, a technique in a server to facilitate a re-establishing of communication over a data connection between an application server and a wireless communication device which communicates via a base station of a wireless communication network is described. In response to a communication loss between the wireless device and the wireless network which causes the data connection to be terminated, the server receives from the application server a plurality of connection requests which are intended for receipt by the wireless device for re-establishing the data connection. The server operates to limit the number or a rate of the connection requests allowed to pass from the server to the base station of the wireless network during the communication loss between the wireless device and the wireless network.

Abstract: Several related methods and apparatus for re-establishing communication for a wireless communication device after a communication loss between the wireless device and a wireless communication network are disclosed. In one illustrative example, the wireless network broadcasts identifiers of wireless devices associated with communication losses in the wireless network over a control channel. After regaining signal coverage, a wireless device monitors the control channel to decode and compare each broadcasted identifier with an identifier of the wireless device. Based on a match between a broadcasted identifier and the identifier of the wireless device, the wireless device transmits a control message which informs the wireless network of the presence of the wireless device. Otherwise, the wireless device normally refrains from transmitting the control message to the wireless network.

Abstract: Several related methods and apparatus for re-establishing communication for a wireless communication device after a communication loss between the wireless device and a wireless communication network are disclosed. In one illustrative example, the wireless network broadcasts identifiers of wireless devices associated with communication losses in the wireless network over a control channel. After regaining signal coverage, a wireless device monitors the control channel to decode and compare each broadcasted identifier with an identifier of the wireless device. Based on a match between a broadcasted identifier and the identifier of the wireless device, the wireless device transmits a control message which informs the wireless network of the presence of the wireless device. Otherwise, the wireless device normally refrains from transmitting the control message to the wireless network.