Abstract: An integrated photonic structure and a method of fabrication includes a substrate having at least one opening disposed therein; a semiconductor stack disposed above the substrate, the semiconductor stack being, at least in part, isolated from the substrate by an opening to define a suspended semiconductor membrane; and a first doped region and a second doped region located within the suspended semiconductor membrane. The first doped region is laterally separated from the second doped region by an optically active region disposed therein that defines a waveguiding region of the integrated photonic structure.

Abstract: A photonic device may include a lower cladding layer and a device layer. The device layer may include a first waveguide supporting TE and TM light, and a second waveguide, where a portion of a second waveguide core is proximate to a first waveguide core to provide evanescent coupling. The first waveguide core is formed from one of a first core structure or a second core structure, and the second waveguide core is formed from the other structure. The first core structure has an index of refraction nM. The second core structure is formed as alternating layers providing an effective index of refraction for TE polarized light nTE and an effective index of refraction for TM polarized light nTM, where nTM<nM<nTE such that one of TM or TE light is preferentially evanescently coupled between the first waveguide and the second waveguide.

Abstract: A polarization-sensitive photonic splitter may include a lower cladding layer and a device layer formed from a first waveguide supporting TE and TM light, a second waveguide, a third waveguide, and a transition core. The first waveguide core and the second waveguide core are formed from one of a first core structure or a second core structure, and the third waveguide is formed from the other structure. The first core structure has an index of refraction nM. The second core structure is formed as alternating layers providing an effective index of refraction for TE light nTE and an effective index of refraction for TM light nTM, where nTM<nM<nTE. The transition core is formed from the first core structure adjacent to the second core structure and is coupled to the first transition core at one and the second and third transition cores at the other end.

Abstract: A photonic device has a polarization-dependent region and a device layer including a first cladding film, a second cladding film, and a core film. The core film includes one of (1) a material having an index nM and (2) alternating layers of a first material having a first index and second material having a second index. The alternating layers have an effective index for TE polarized light nTE and an effective index for TM polarized light nTM. Each of the first cladding film and the second cladding film include the other of (1) the material having the index of refraction nM and (2) the alternating layers nTM<nM<nTE, and the indices of the upper cladding and the lower cladding are less than nTM, nM and nTE. A polarizer, polarizing beam splitter and coupler using clipped coupling can employ the material having an index nM and the alternating layers.

Abstract: A photonic integrated circuit and a method of fabrication are provided which includes: a substrate; a first optical waveguide disposed, at least in part, extending across the substrate, the first optical waveguide being configured to transmit a first mode of light; and a second optical waveguide located at least partially over the first optical waveguide, the second optical waveguide being configured to transmit a second mode of light, wherein the first optical waveguide is vertically coupled to the second optical waveguide through a third optical waveguide disposed below the second waveguide.

Abstract: A photonic device has a polarization-dependent region and a device layer including a first cladding film, a second cladding film, and a core film. The core film includes one of (1) a material having an index nM and (2) alternating layers of a first material having a first index and second material having a second index. The alternating layers have an effective index for TE polarized light nTE and an effective index for TM polarized light nTM. Each of the first cladding film and the second cladding film include the other of (1) the material having the index of refraction nM and (2) the alternating layers nTM<nM<nTE, and the indices of the upper cladding and the lower cladding are less than nTM, nM and nTE. A polarizer, polarizing beam splitter and coupler using clipped coupling can employ the material having an index nM and the alternating layers.

Abstract: A polarization-sensitive photonic splitter may include a lower cladding layer and a device layer formed from a first waveguide supporting TE and TM light, a second waveguide, a third waveguide, and a transition core. The first waveguide core and the second waveguide core are formed from one of a first core structure or a second core structure, and the third waveguide is formed from the other structure. The first core structure has an index of refraction nM. The second core structure is formed as alternating layers providing an effective index of refraction for TE light nTE and an effective index of refraction for TM light nTM, where nTM<nM<nTE. The transition core is formed from the first core structure adjacent to the second core structure and is coupled to the first transition core at one and the second and third transition cores at the other end.

Abstract: A photonic device may include a lower cladding layer and a device layer. The device layer may include a first waveguide supporting TE and TM light, and a second waveguide, where a portion of a second waveguide core is proximate to a first waveguide core to provide evanescent coupling. The first waveguide core is formed from one of a first core structure or a second core structure, and the second waveguide core is formed from the other structure. The first core structure has an index of refraction nM. The second core structure is formed as alternating layers providing an effective index of refraction for TE polarized light nTE and an effective index of refraction for TM polarized light nTM, where nTM<nM<nTE such that one of TM or TE light is preferentially evanescently coupled between the first waveguide and the second waveguide.

Abstract: The present invention is an integrated photonics platform is created through the application of a polymer and silicon dioxide mask, multiple anisotropic etchings with inductively-coupled plasma reactive-ion-etching and a brief isotropic silicon etching to produce a a T-shaped silicon base wafer. A silicon-on-insulator donor wafer is bonded to the silicon base wafer a silicon dioxide layer between the two wafers is removed, producing a finalized T-shaped optical waveguide. The T-shaped optical waveguide causes confinement of the optical mode in the upper region of the “T,” above the connection to the post. This shape prevents leakage of light into the silicon wafer.

Abstract: A photonic device has a polarization-dependent region and a device layer including a first cladding film, a second cladding film, and a core film. The core film includes one of (1) a material having an index nM and (2) alternating layers of a first material having a first index and second material having a second index. The alternating layers have an effective index for TE polarized light nTE and an effective index for TM polarized light nTM. Each of the first cladding film and the second cladding film include the other of (1) the material having the index of refraction nM and (2) the alternating layers nTM<nM<nTE, and the indices of the upper cladding and the lower cladding are less than nTM, nM and nTE. A polarizer, polarizing beam splitter and coupler using clipped coupling can employ the material having an index nM and the alternating layers.

Abstract: An integrated photonic structure and a method of fabrication includes a substrate having at least one opening disposed therein; a semiconductor stack disposed above the substrate, the semiconductor stack being, at least in part, isolated from the substrate by an opening to define a suspended semiconductor membrane; and a first doped region and a second doped region located within the suspended semiconductor membrane. The first doped region is laterally separated from the second doped region by an optically active region disposed therein that defines a waveguiding region of the integrated photonic structure.

Abstract: The present invention is an integrated photonics platform is created through the application of a polymer and silicon dioxide mask, multiple anisotropic etchings with inductively-coupled plasma reactive-ion-etching and a brief isotropic silicon etching to produce a a T-shaped silicon base wafer. A silicon-on-insulator donor wafer is bonded to the silicon base wafer a silicon dioxide layer between the two wafers is removed, producing a finalized T-shaped optical waveguide. The T-shaped optical waveguide causes confinement of the optical mode in the upper region of the “T,” above the connection to the post. This shape prevents leakage of light into the silicon wafer.

Abstract: A photonic integrated circuit and a method of fabrication are provided which includes: a substrate; a first optical waveguide disposed, at least in part, extending across the substrate, the first optical waveguide being configured to transmit a first mode of light; and a second optical waveguide located at least partially over the first optical waveguide, the second optical waveguide being configured to transmit a second mode of light, wherein the first optical waveguide is vertically coupled to the second optical waveguide through a third optical waveguide disposed below the second waveguide.