Abstract: Disclosed are optical arrays and optical devices that can be operated in narrow and wide spectral bands and at high spectral resolutions. Disclosed also are filter arrays with replicated etalon units that can function as bandpass filters. Disclosed further are methods for manufacturing optical arrays, filter arrays, and optical devices having such optical or filter arrays.

Abstract: An optical interference device 100 is disclosed herein. In a described embodiment, the optical interference device 100 comprises a phase shifter array 108 for receiving a collimated beam of light. The phase shifter array 108 includes an array of cells 128 for producing optical light channels from respective rays of the collimated beam of light, with at least some of the optical light channels having varying phase shifts. The optical interference device 100 further includes a focusing lens 110 having a focal distance and arranged to simultaneously produce, from the optical light channels, a focused beam of light in its focal plane and an image downstream the phase shifter array 108 for detection by an optical detector 116.

Abstract: An optical interference device is disclosed herein. In a described embodiment, the optical interference device comprises a phase shifter array for receiving a collimated beam of light. The phase shifter array includes an array of cells for producing optical light channels from respective rays of the collimated beam of light, with at least some of the optical light channels having varying phase shifts. The optical interference device further includes a focusing lens having a focal distance and arranged to simultaneously produce, from the optical light channels, a focused beam of light in its focal plane and an image downstream the phase shifter array for detection by an optical detector. The optical interference device also includes an optical spatial filter arranged at the focal distance of the focusing lens and arranged to filter the focused beam of light to produce a spatially distributed interference light pattern in zeroth order for detection by the optical detector.

Abstract: A version of the invention comprises a device for controlling or interfacing with a computer or other form of communicable machine based on the pyroelectric effect, and includes at least one optically- and infrared- (IR-) transparent graphene electrode.

Abstract: Graphene and ferroelectric materials are used as tunable sensors for detecting and measuring radiation, such as infrared radiation. The low absorption and reflectance of graphene and interconnected graphene networks, for example in the infrared, are exploited for use in such tunable sensors. The active layer makes use of a unique property of ferroelectric materials, known as the pyroelectric effect, for measuring the intensity of impinging radiation. Using graphene electrodes may offer a significant increase in sensitivity, tunability and mechanical flexibility of sensors, such as infrared sensors. In one method, intensity of radiation is measured using variations in the doping level of the graphene electrode.

Abstract: A version of the invention comprises a device for controlling or interfacing with a computer or other form of communicable machine based on the pyroelectric effect, and includes at least one optically- and infrared- (IR-) transparent graphene electrode.

Abstract: A device for analysing a specimen is disclosed. The device comprises a first polarizer for polarizing a first beam of electromagnetic radiation; an optical device for directing the polarized beam of electromagnetic radiation at the specimen to enable interaction between the polarized beam of electromagnetic radiation and the specimen to cause generation of a second beam of electromagnetic radiation; a plurality of second polarizers for dividing the wavefront of the second beam of electromagnetic radiation into a plurality of beams of electromagnetic radiation polarized with different polarization states; and at least one spectrometer for analysing respective electromagnetic spectrums of the plurality of polarized beams of electromagnetic radiation to enable the specimen to be characterised. A related method is also disclosed.

Abstract: An optical interference device 100 is disclosed herein. In a described embodiment, the optical interference device 100 comprises a phase shifter array 108 for receiving a collimated beam of light. The phase shifter array 108 includes an array of cells 128 for producing optical light channels from respective rays of the collimated beam of light, with at least some of the optical light channels having varying phase shifts. The optical interference device 100 further includes a focusing lens 110 having a focal distance and arranged to simultaneously produce, from the optical light channels, a focused beam of light in its focal plane and an image downstream the phase shifter array 108 for detection by an optical detector 116.

Abstract: Graphene and ferroelectric materials are used as tunable sensors for detecting and measuring radiation, such as infrared radiation. The low absorption and reflectance of graphene and interconnected graphene networks, for example in the infrared, are exploited for use in such tunable sensors. The active layer makes use of a unique property of ferroelectric materials, known as the pyroelectric effect, for measuring the intensity of impinging radiation. Using graphene electrodes may offer a significant increase in sensitivity, tunability and mechanical flexibility of sensors, such as infrared sensors. In one method, intensity of radiation is measured using variations in the doping level of the graphene electrode.

Abstract: A lithography method and apparatus is disclosed herein. In a described embodiment, the method comprises (i) providing a first mask having an exposure pattern for forming a three dimensional structure; (ii) exposing the first mask to radiation to form the exposure pattern on a radiation-sensitive resist; the exposure pattern defined by irradiated areas and non-irradiated areas of the resist; (ii) providing a second mask; and (iii) during exposure, changing relative positions between the first mask and the second mask to shield selected portions of the irradiated areas from radiation to enable varying depth profiles to be created in the three dimensional structure.

Abstract: A lithography method and apparatus is disclosed herein. In a described embodiment, the method comprises (i) providing a first mask having an exposure pattern for forming a three dimensional structure; (ii) exposing the first mask to radiation to form the exposure pattern on a radiation-sensitive resist; the exposure pattern defined by irradiated areas and non-irradiated areas of the resist; (ii) providing a second mask; and (iii) during exposure, changing relative positions between the first mask and the second mask to shield selected portions of the irradiated areas from radiation to enable varying depth profiles to be created in the three dimensional structure.