Abstract: An arrangement of carbon nanotubes (CNTs) is disclosed. The arrangement includes: a substrate (100); a first CNT block (110) rising up from the substrate (100); a second CNT block (120) rising up from the substrate (100), the first CNT block (110) and the second CNT block (120) being spaced apart from each other; and a CNT link (130) connecting the first CNT block (110) to the second CNT block (120). The CNTs of the CNT link (130) are aligned in a same direction as the CNTs of the first CNT block (110) and the second CNT block (120), and the CNT link (130) is configured as a CNT bridge.

Abstract: A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InyGa1-y-xAlxAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.

Abstract: A photonic integrated circuit is disclosed comprising: a dielectric substrate (110); a dielectric waveguide arrangement (120) on the substrate (110) for guiding terahertz (THz) waves; and a local functionalization (130) having a metallization in a surface area of the dielectric waveguide arrangement (120). The metallization is localized along a propagation direction of the THz waves to allow a metallization-free propagation of the THz wave outside of the local functionalization.

Abstract: A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InyGa1-y-xAlxAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.

Abstract: The invention relates to a device for the spectral analysis of an electromagnetic measurement signal using an optoelectronic mixer, wherein the optoelectronic mixer is designed to generate the electrical superimposition signal by superimposing the electromagnetic measurement signal and a reference signal with at least one known frequency (fo). The device comprises the following features: a signal input for receiving an electrical superimposition signal from the optoelectronic mixer, a low-pass filter, a rectifier, and a read-out unit. The low-pass filter is designed to generate a filtered superimposition signal from the electrical superimposition signal by filtering out frequency portions above an upper cutoff frequency (fG). The rectifier is designed to generate a rectified superimposition signal from the filtered superimposition signal.

Abstract: A photonic integrated circuit is disclosed comprising: a dielectric substrate (110); a dielectric waveguide arrangement (120) on the substrate (110) for guiding terahertz (THz) waves; and a local functionalization (130) having a metallization in a surface area of the dielectric waveguide arrangement (120). The metallization is localized along a propagation direction of the THz waves to allow a metallization-free propagation of the THz wave outside of the local functionalization.

Abstract: The invention relates to a device for the spectral analysis of an electromagnetic measurement signal using an optoelectronic mixer, wherein the optoelectronic mixer is designed to generate the electrical superimposition signal by superimposing the electromagnetic measurement signal and a reference signal with at least one known frequency (fo). The device comprises the following features: a signal input for receiving an electrical superimposition signal from the optoelectronic mixer , a low-pass filter, a rectifier, and a read-out unit. The low-pass filter is designed to generate a filtered superimposition signal from the electrical superimposition signal by filtering out frequency portions above an upper cutoff frequency (fG). The rectifier is designed to generate a rectified superimposition signal from the filtered superimposition signal.

Abstract: A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InyGa1-y-xAlxAs is between x=0.2 and x=0.35, wherewith the proportion y of in may be between 0.5 and 0.55. The support substrate is InP or GaAs.

Abstract: A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InyGa1?y?xAlxAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.