Abstract: Systems, methods, and apparatus related to spike current suppression in a memory array. In one approach, a memory device includes a memory array having a cross-point memory architecture. The memory array has access lines (e.g., word lines and/or bit lines) configured to access memory cells of the memory array. Each access line is formed of a conductive material (e.g., tungsten). The access line includes one or more resistive layers (e.g., tungsten silicon nitride) each having a resistivity greater than the resistivity of the conductive material used to form the access line. The resistive layers are formed overlying or underlying at least a portion of the memory cells. A driver is electrically connected to the access line using a via. The driver generates a voltage on the access line to access the memory cells.

Abstract: Systems, methods, and apparatus related to spike current suppression in a memory array. In one approach, a memory device includes a memory array having a crosspoint memory architecture. The memory array has access lines (e.g., word lines and/or bit lines) configured to access memory cells of the memory array. Each access line is formed of a conductive material (e.g., tungsten). The access line includes one or more resistive layers (e.g., tungsten silicon nitride) each having a resistivity greater than the resistivity of the conductive material used to form the access line. The resistive layers are formed overlying or underlying at least a portion of the memory cells. A driver is electrically connected to the access line using a via. The driver generates a voltage on the access line to access the memory cells.