Abstract: Described herein is an acidic aqueous composition for copper electroplating including (a) copper ions; (b) bromide ions; and (c) at least one additive of formula S1 where XS1 is selected from the group consisting of a linear, branched or cyclic C1-C12 alkanediyl; RS1 is a monovalent (a) poly(oxy(C3 to C6)alkylene)-block-poly(oxyethylene) group, or (b) a poly(oxyethylene)-block-poly(oxy(C3 to C6)alkylene)-block-poly(oxyethylene) group; RS2, RS3, RS4 (a) are selected from the group consisting of H, RS1, RS40, or (b) RS3 and an adjacent group RS4 or, if n>2, two adjacent groups RS4 may together form a divalent group XS3; RS40 is selected from the group consisting of (a) linear or branched C1-C20 alkyl, and (b) linear or branched C1-C20 alkenyl; XS3 is selected from the group consisting of a linear, branched or cyclic C1-C12 alkanediyl; and n is an integer of from 1 to 6.

Abstract: Described herein is a composition for depositing copper on a semiconductor substrate, the composition including (a) copper ions; (b) a grain refiner of formula G1 or salts thereof (c) a complexing agent; and (d) optionally a buffer or a base capable of adjusting the pH to a pH of from 7 to 13; where the variables are as defined herein; and where the pH of the composition is from 7 to 13.

Abstract: Described herein is a composition for depositing copper on a semiconductor substrate, the composition including (a) copper ions; (b) an additive of formula S1 (c) a complexing agent; and (d) optionally a buffer or base capable of adjusting the pH to a pH of from 7 to 13; where the variables are as defined herein; and where the pH of the composition is from 7 to 13 and where the composition is free of any cyanide.

Abstract: A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.

Abstract: A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.

Abstract: A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.

Abstract: A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.