Patents by Inventor Sathish VALLAMKONDA

Sathish VALLAMKONDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power transistors with a resistor coupled to a sense transistor
    Patent number: 10422818
    Abstract: An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.
    Type: Grant
    Filed: December 30, 2017
    Date of Patent: September 24, 2019
    Assignee: Texas Instruments Incorporated
    Inventors: Tikno Harjono, Vijay Krishnamurthy, Min Chu, Kuntal Joardar, Gary Eugene Daum, Subrato Roy, Vinayak Hegde, Ankur Chauhan, Sathish Vallamkonda, Md Abidur Rahman, Eung Jung Kim
  • POWER TRANSISTORS WITH A RESISTOR COUPLED TO A SENSE TRANSISTOR
    Publication number: 20190204361
    Abstract: An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.
    Type: Application
    Filed: December 30, 2017
    Publication date: July 4, 2019
    Inventors: Tikno HARJONO, Vijay KRISHNAMURTHY, Min CHU, Kuntal JOARDAR, Gary Eugene DAUM, Subrato ROY, Vinayak HEGDE, Ankur CHAUHAN, Sathish VALLAMKONDA, Md Abidur RAHMAN, Eung Jung KIM