Patents by Inventor Sathyendra Ghantasala

Sathyendra Ghantasala has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10607815
    Abstract: Methods of operating and assembling a plasma chamber are disclosed. An operating method includes tuning a match network of a plasma chamber while running a non-plasma discharge recipe. A hardware impedance of the plasma chamber is calculated from the match network settings from the tuning. A match loss for the plasma chamber is also calculated according to match network settings. A radio frequency (RF) power setting for the first plasma chamber is set according to the calculated hardware impedance and the calculated match loss. Such methods can be utilized to provide chamber-to-chamber performance matching across different plasma chambers. Certain disclosed methods of operating the plasma chamber can be utilized to identify hardware faults during operation and/or assembly processes.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: March 31, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sathyendra Ghantasala, Hyun-Ho Doh, Vijayakumar C. Venugopal
  • Publication number: 20200006039
    Abstract: Methods of operating and assembling a plasma chamber are disclosed. An operating method includes tuning a match network of a plasma chamber while running a non-plasma discharge recipe. A hardware impedance of the plasma chamber is calculated from the match network settings from the tuning. A match loss for the plasma chamber is also calculated according to match network settings. A radio frequency (RF) power setting for the first plasma chamber is set according to the calculated hardware impedance and the calculated match loss. Such methods can be utilized to provide chamber-to-chamber performance matching across different plasma chambers. Certain disclosed methods of operating the plasma chamber can be utilized to identify hardware faults during operation and/or assembly processes.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 2, 2020
    Inventors: Sathyendra GHANTASALA, Hyun-Ho DOH, Vijayakumar C. VENUGOPAL
  • Publication number: 20190348312
    Abstract: A method for detecting an endpoint of a seasoning process in a process chamber includes obtaining seasoning progress data indicating a progress of the seasoning process for each substrate of a first plurality of substrates, and collecting historical parameter values from a plurality of sensors disposed in the process chamber. The historical parameter values for each substrate of the first plurality of substrates are normalized with respect to a plurality of parameter values for a particular substrate in the first plurality of substrates. An MVA model is generated by applying a set of coefficients to the normalized parameter values for each substrate of the first plurality of substrates, and the set of coefficients are regressed based on the seasoning progress data. An end point of the seasoning process is determined using the MVA model with a plurality of substantially real-time parameter values measured when performing a seasoning process over each substrate of a second plurality of substrates.
    Type: Application
    Filed: May 3, 2019
    Publication date: November 14, 2019
    Inventors: Subrahmanyam Venkata Rama KOMMISETTI, Eda TUNCEL, Shayne SMITH, Liming ZHANG, Sathyendra GHANTASALA, Ryan PATZ
  • Publication number: 20190302174
    Abstract: A system for verifying the operation of RF generators and resulting pulse waveforms in semiconductor processes includes a process chamber, a profile sensor, an optical sensor and a controller. A process implemented by the controller of the system for verifying the operation of RF generators and resulting pulse waveforms in semiconductor processes includes generating a pulse profile of a pulse shape of an RF generator under test, selecting a stored, representative profile of an RF generator known to be operating correctly to compare to the profile generated for the RF generator for a same pulse mode, defining a quantitative metric/control limit to identify similarities and/or differences between pulses of same pulse modes between the generated profile of the RF generator and the stored profile, comparing the generated profile and the selected stored profile, and determining if the RF generator under test is operating properly based on the comparison.
    Type: Application
    Filed: April 3, 2018
    Publication date: October 3, 2019
    Inventors: Sathyendra Ghantasala, Hyun-Ho Doh
  • Patent number: 9934351
    Abstract: A method for wafer point by point analysis includes receiving first recipe parameters for a first process recipe, second recipe parameters for a second process recipe, a first plurality of measurements of a plurality of locations on a first wafer processed using the first process recipe, and a second plurality of measurements of the plurality of locations on a second wafer processed using the second process recipe. A plurality of sensitivity values are calculated using the first and second values for the plurality of recipe parameters and the first and second plurality of measurements, each of the plurality of sensitivity values corresponding to one of the plurality of locations and representing a sensitivity to one of the plurality of recipe parameters. A graphical representation of a wafer is then provided that shows at least a subset of the first plurality of sensitivity values for the plurality of locations.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: April 3, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Dermot Cantwell, Sathyendra Ghantasala
  • Publication number: 20170132352
    Abstract: A method for wafer point by point analysis includes receiving first recipe parameters for a first process recipe, second recipe parameters for a second process recipe, a first plurality of measurements of a plurality of locations on a first wafer processed using the first process recipe, and a second plurality of measurements of the plurality of locations on a second wafer processed using the second process recipe. A plurality of sensitivity values are calculated using the first and second values for the plurality of recipe parameters and the first and second plurality of measurements, each of the plurality of sensitivity values corresponding to one of the plurality of locations and representing a sensitivity to one of the plurality of recipe parameters. A graphical representation of a wafer is then provided that shows at least a subset of the first plurality of sensitivity values for the plurality of locations.
    Type: Application
    Filed: November 9, 2015
    Publication date: May 11, 2017
    Inventors: Dermot Cantwell, Sathyendra Ghantasala