Abstract: A method is described for migration of a deposition material across a diffusion couple deposited on a substrate to a substrate surface including: using a reactor system to facilitate the migration of one or more diffusion materials across a diffusion couple to a substrate by applying a specified pressure to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate, where the specified pressure has a value between 14.5 psi and 125 psi, and applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate, where the heatable top disk is controlled at a temperature between 25° C. and 500° C. and the heatable bottom disk is controlled at a temperature between 25° C. and 500° C., and where graphene is formed on the substrate surface.

Abstract: In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom disk includes a first heating mechanism. The heatable bottom disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom disk. A heatable top disk comprising a second heating mechanism. The heatable top disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom disk. While the heatable top disk applies the mechanical pressure, a chamber pressure is maintained at a specified low value. The first heating mechanism and the second heating mechanism can be independently tuned to any value in the working range.

Abstract: A scalable diffusion-couple apparatus including: a transfer chamber configured to load a wafer into a process chamber which is configured to receive the wafer, the process chamber including: a heatable bottom disk including a first heating mechanism, where the heatable bottom disk is fixed, heatable to a specified temperature, and the wafer placed; and a heatable top disk including a second heating mechanism, where the heatable top disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer, and where the heatable top disk applies the pressure while a chamber pressure is maintained at a less than or equal to 10?3 torr, where the first and second heating mechanisms are tuned independently, and where the wafer includes a diffusion material prior to application of the mechanical pressure and the specified temperature.

Abstract: An intercalation doping apparatus including: a reactor chamber where single or multiple wafers or substrates (SoMWoSubs) are disposed within the reactor chamber, where SoMWoSubs have a diameter or a side distance from 25 mm to 450 mm; a heater, where the heater is configured to provide heat to the SOMWoSubs disposed within the reactor chamber, where the SoMWoSubs include a temperature from 25° C. to 500° C.; where pressure is applied to at least one surface of the SOMWoSubs disposed within the reactor chamber within a range of 2 bar to 500 bar; and a dopant application apparatus, where the dopant application apparatus includes at least valves and tubing which bring dopants from outside to within the reactor chamber and includes at least a dopant crucible disposed within the reactor chamber, where the dopants include material in solid, liquid, or gaseous phase, and where the dopants include intercalation doping agents.

Abstract: In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom substrate disk includes a first heating mechanism. The heatable bottom substrate disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom substrate disk. A heatable top substrate disk comprising a second heating mechanism. The heatable top substrate disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom substrate disk. While the heatable top substrate disk applies the mechanical pressure a chamber pressure is maintained at a specified low value.

Abstract: In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom substrate disk includes a first heating mechanism. The heatable bottom substrate disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom substrate disk. A heatable top substrate disk comprising a second heating mechanism. The heatable top substrate disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom substrate disk. While the heatable top substrate disk applies the mechanical pressure a chamber pressure is maintained at a specified low value.

Abstract: In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom substrate disk includes a first heating mechanism. The heatable bottom substrate disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom substrate disk. A heatable top substrate disk comprising a second heating mechanism. The heatable top substrate disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom substrate disk. While the heatable top substrate disk applies the mechanical pressure a chamber pressure is maintained at a specified low value.

Abstract: In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom substrate disk includes a first heating mechanism. The heatable bottom substrate disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom substrate disk. A heatable top substrate disk comprising a second heating mechanism. The heatable top substrate disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom substrate disk. While the heatable top substrate disk applies the mechanical pressure a chamber pressure is maintained at a specified low value.

Abstract: A suitcase with retractable wheels is described. A linkage provides a means to raise and lower wheels either by a vertical motion or a folding motion such that the wheels may be extended for rolling the suitcase when the use is walking and the wheels may be retracted for easy stowage of the suitcase such as in a luggage compartment. The linkage may be attached to the back of the suitcase, located in the interior of the suitcase or enclosed in a shell that is attached to the back of the suitcase.

Abstract: A wafer processing system has a ring maintenance module for loading wafers into a chuck assembly, and for cleaning and inspecting the chuck assembly used in electroplating processors of the system. A shaft is attached to a rotor plate. A rotation motor rotates the shaft and a rotor plate on the shaft. A chuck clamp on an upper end of the shaft holds the chuck assembly onto the rotor plate. A lift motor raises and lowers the rotor plate and the shaft, to move open the chuck assembly for wafer loading and unloading, and to move the chuck assembly into different process positions. A swing arm having spray nozzles may be provided for cleaning the chuck assembly.

Abstract: A wafer processing system has a ring maintenance module for loading wafers into a chuck assembly, and for cleaning and inspecting the chuck assembly used in electroplating processors of the system. A shaft is attached to a rotor plate. A rotation motor rotates the shaft and a rotor plate on the shaft. A chuck clamp on an upper end of the shaft holds the chuck assembly onto the rotor plate. A lift motor raises and lowers the rotor plate and the shaft, to move open the chuck assembly for wafer loading and unloading, and to move the chuck assembly into different process positions. A swing arm having spray nozzles may be provided for cleaning the chuck assembly.

Abstract: Described herein is a method and apparatus for performing calibrations on robotic components. In one embodiment, a method for performing robotic calibrations includes moving the calibrating device across a target (e.g., a wafer chuck). Next, the method includes measuring distances between light spots from the sensors and a perimeter of the target using the sensors located on the calibrating device. Next, the method includes determining a displacement of the calibrating device relative to a center of the target. Then, the method includes determining a rotation angle of the calibrating device relative to a system of coordinates of the target. Next, the method includes calibrating a robot position of the robot based on the displacement and rotation angle of the calibrating device with respect to the target.

Abstract: Systems, apparatus and methods for transporting substrates between system components of an electronic device manufacturing system are provided. The systems and apparatus include an electrostatic end effector having a base, an electrode pair on the base, and spacer members for spacing the substrate from the electrode pairs to provide a gap between the electrode pair and the substrate. Methods of the invention as well as numerous other aspects are provided.

Abstract: Described herein is a method and apparatus for performing calibrations on robotic components. In one embodiment, a method for performing robotic calibrations includes moving the calibrating device across a target (e.g., a wafer chuck). Next, the method includes measuring distances between light spots from the sensors and a perimeter of the target using the sensors located on the calibrating device. Next, the method includes determining a displacement of the calibrating device relative to a center of the target. Then, the method includes determining a rotation angle of the calibrating device relative to a system of coordinates of the target. Next, the method includes calibrating a robot position of the robot based on the displacement and rotation angle of the calibrating device with respect to the target.

Abstract: Described herein is a method and system for performing calibrations on robotic components. In one embodiment, a method for performing robotic calibrations includes manually calibrating a center of a robot blade aligned with respect to a target. The method further includes recording a first positional value of the center of the robot blade aligned with respect to a camera. The method further includes automatically determining a second positional value of the center of the robot blade aligned with respect to the camera. The method further includes automatically recalibrating the robot blade based on an offset between the second positional value and the first positional value exceeding a tolerance offset from the first positional value.

Abstract: Described herein is a method and apparatus for performing calibrations on robotic components. In one embodiment, a method for performing robotic calibrations includes moving the calibrating device across a target (e.g., a wafer chuck). Next, the method includes measuring distances between light spots from the sensors and a perimeter of the target using the sensors located on the calibrating device. Next, the method includes determining a displacement of the calibrating device relative to a center of the target. Then, the method includes determining a rotation angle of the calibrating device relative to a system of coordinates of the target. Next, the method includes calibrating a robot position of the robot based on the displacement and rotation angle of the calibrating device with respect to the target.

Abstract: A detection apparatus for, and a method of, detecting the location of the tip of a tubular element, in particular a needle, within a region, in particular one of the epidural space and the peritoneal cavity.

Abstract: A controller for closed loop control of infusion devices is described. A variety of infusion systems are described that use the closed loop control architecture. In some embodiments the closed loop control may be adapted to current commonly used infusion means such as a gravity feed intravenous system. Other embodiments describe infusion pump system that use biasing or drive mechanisms of springs, elastomers, rotary and linear motors.

Abstract: A system architecture for closed loop control of infusion devices is described. The architecture provides means to control the flow from an infusion device as well as in some embodiments the pressure of the delivery. A variety of infusion systems are described that use the closed loop control architecture. In some embodiments the closed loop control may be adapted to current commonly used infusion means such as a gravity feed intravenous system. Other embodiments describe infusion pump system that use biasing or drive mechanisms of springs, elastomers, rotary and linear motors.

Abstract: A detection apparatus for, and a method of, detecting the location of the tip of a tubular element, in particular a needle, within a region, in particular one of the epidural space and the peritoneal cavity.