Abstract: A semiconductor laser element comprising: a clad layer of a first conductivity type; an active layer; a first clad layer of a second conductivity type; a ridge made of a second clad layer of the second conductivity type and a cap layer of the second conductivity type, which are layered on the first clad layer of the second conductivity type, in this order starting from the first clad layer side; a dielectric film formed on ridge sides other than a top portion of the ridge; and a metal electrode layer that covers the ridge, wherein the width of the bottom of the cap layer and the width of the top surface of the second clad layer are approximately equal.

Abstract: Provided is an in-factory data control system that, at a lower cost, can collect output data from a facility having no data transmitting function and data which is not object of automatic transmission, and carry out data control such as processing/analyzing of the collected data. In an in-factory data control system, data outputted to a data output section of a facility having a data output function, but no data transmitting function is inputted to a portable terminal which is portable, the inputted data is transmitted by wireless communication from the portable terminal to a host computer, and the data having received by the host computer is processed and/or analyzed.

Abstract: On a mount surface portion of a semiconductor laser device, a first bonding layer is so formed that a first region near a light-emitting area is exposed. On a mount surface portion of a sub mount is formed a second bonding layer having a melting point T2 lower than a melting point T1 of the first bonding layer. The first and second bonding layers are heated in a mutually pressed state at a temperature T lower than the melting point T1 of the first bonding layer but higher than the melting point T2 of the second bonding layer (T1>T>T2) to bond the semiconductor laser device to the sub mount. When the semiconductor laser device is bonded to the sub mount, the first region serves as the non-bonding area.

Abstract: A semiconductor laser element comprising: a clad layer of a first conductivity type; an active layer; a first clad layer of a second conductivity type; a ridge made of a second clad layer of the second conductivity type and a cap layer of the second conductivity type, which are layered on the first clad layer of the second conductivity type, in this order starting from the first clad layer side; a dielectric film formed on ridge sides other than a top portion of the ridge; and a metal electrode layer that covers the ridge, wherein the width of the bottom of the cap layer and the width of the top surface of the second clad layer are approximately equal.

Abstract: There is provided a semiconductor laser device which is generally uniform in carrier concentration of a clad layer, almost free from strain, and less demanding for time and labor in its manufacturing, and which has stable characteristics. On an n-GaAs substrate, an n-type clad layer, an active layer, a p-type clad layer, and a cap layer are stacked one on another at a temperature of 700-750° C. Widthwise both side portions of the cap layer as well as widthwise both side specified-depth portions of the p-type clad layer are removed by etching to form a ridge portion, and a current constriction layer is formed on widthwise both sides of the ridge portion. A flattening layer having a planar surface is formed on the current constriction layer and the cap layer by slow cooling LPE process at a temperature of 700° C. or lower. On the flattening layer, a contact layer is formed by MOCVD process at a temperature of about 650° C.

Abstract: On a mount surface portion of a semiconductor laser device, a first bonding layer is so formed that a first region near a light-emitting area is exposed. On a mount surface portion of a sub mount is formed a second bonding layer having a melting point T2 lower than a melting point T1 of the first bonding layer. The first and second bonding layers are heated in a mutually pressed state at a temperature T lower than the melting point T1 of the first bonding layer but higher than the melting point T2 of the second bonding layer (T1>T>T2) to bond the semiconductor laser device to the sub mount. When the semiconductor laser device is bonded to the sub mount, the first region serves as the non-bonding area.

Abstract: A semiconductor device production apparatus includes a rotary table section including a rotary table for supporting a wafer thereon, a chamber for housing the rotary table section, a heater provided in the chamber for heating the wafer, a temperature sensing device for sensing a temperature of the wafer, a temperature measuring section for converting the sensed temperature into a first signal to output the first signal, and a signal generating section for converting the output first signal into a second signal detectable from outside the chamber.

Abstract: There is provided a semiconductor laser device which is generally uniform in carrier concentration of a clad layer, almost free from strain, and less demanding for time and labor in its manufacturing, and which has stable characteristics. On an n-GaAs substrate, an n-type clad layer, an active layer, a p-type clad layer, and a cap layer are stacked one on another at a temperature of 700-750° C. Widthwise both side portions of the cap layer as well as widthwise both side specified-depth portions of the p-type clad layer are removed by etching to form a ridge portion, and a current constriction layer is formed on widthwise both sides of the ridge portion. A flattening layer having a planar surface is formed on the current constriction layer and the cap layer by slow cooling LPE process at a temperature of 700° C. or lower. On the flattening layer, a contact layer is formed by MOCVD process at a temperature of about 650° C.