Patents by Inventor Satoh RYUICHI
Satoh RYUICHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10184171Abstract: A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space.Type: GrantFiled: January 22, 2015Date of Patent: January 22, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Satoh Ryuichi, Kyu Sik Kim
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Patent number: 10141376Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.Type: GrantFiled: May 12, 2017Date of Patent: November 27, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Satoh Ryuichi, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Tadao Yagi, Chul Joon Heo
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Patent number: 10134811Abstract: Image sensors include a color photo-sensing photoelectric conversion device, a first color filter and a second color filter disposed under the color photo-sensing photoelectric conversion device, a first photodiode and a second photodiode disposed under the first color filter and the second color filter, respectively, a first light guide member disposed between the first color filter and the first photodiode, and a second light guide member disposed between the second color filter and the second photodiode.Type: GrantFiled: May 11, 2017Date of Patent: November 20, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Kyu Sik Kim, Satoh Ryuichi, Gae Hwang Lee
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Publication number: 20170250227Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.Type: ApplicationFiled: May 12, 2017Publication date: August 31, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Bae PARK, Satoh RYUICHI, Gae Hwang LEE, Kwang Hee LEE, Dong-Seok LEEM, Yong Wan JIN, Tadao YAGI, Chul Joon HEO
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Publication number: 20170250226Abstract: Image sensors include a color photo-sensing photoelectric conversion device, a first color filter and a second color filter disposed under the color photo-sensing photoelectric conversion device, a first photodiode and a second photodiode disposed under the first color filter and the second color filter, respectively, a first light guide member disposed between the first color filter and the first photodiode, and a second light guide member disposed between the second color filter and the second photodiode.Type: ApplicationFiled: May 11, 2017Publication date: August 31, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Kyu Sik KIM, Satoh Ryuichi, Gae Hwang Lee
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Patent number: 9679948Abstract: Image sensors include a color photo-sensing photoelectric conversion device, a first color filter and a second color filter disposed under the color photo-sensing photoelectric conversion device, a first photodiode and a second photodiode disposed under the first color filter and the second color filter, respectively, a first light guide member disposed between the first color filter and the first photodiode, and a second light guide member disposed between the second color filter and the second photodiode.Type: GrantFiled: February 6, 2015Date of Patent: June 13, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Kyu Sik Kim, Satoh Ryuichi, Gae Hwang Lee
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Patent number: 9673259Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.Type: GrantFiled: January 23, 2015Date of Patent: June 6, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Satoh Ryuichi, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Tadao Yagi, Chul Joon Heo
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Patent number: 9590121Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58?x1<3.0), ZnOx2 (1.0?x2<2.0), TiOx3 (1.5?x3<2.0), VOx4 (1.5?x4<2.0), TaOx5 (1.0?x5<2.5), WOx6 (2.0<x6<3.0), and a combination thereof.Type: GrantFiled: June 19, 2015Date of Patent: March 7, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Seong Heon Kim, Dongjin Yun, Sung Heo, Kyu Sik Kim, Satoh Ryuichi, Gyeongsu Park, Hyung-Ik Lee
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Patent number: 9548336Abstract: Image sensors, and electronic devices including the same, include a first photo-sensing device sensing light in a full visible to near infrared ray region, a second photo-sensing device sensing light in a blue wavelength region, a third photo-sensing device sensing light in a red wavelength region, and a fourth photo-sensing device sensing light in a green wavelength region. At least one of the first photo-sensing device, the second photo-sensing device, the third photo-sensing device, and the fourth photo-sensing device includes a pair of light-transmitting electrodes facing each other, and a photoactive layer between the light-transmitting electrodes. The photoactive layer includes an organic light-absorbing material.Type: GrantFiled: December 10, 2014Date of Patent: January 17, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Kyu Sik Kim, Satoh Ryuichi, Hong-Seok Lee
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Publication number: 20160233351Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58?x1<3.0), ZnOx2 (1.0?x2<2.0), TiOx3 (1.5?x3<2.0), VOx4 (1.5?x4<2.0), TaOx5 (1.0?x5<2.5), WOx6 (2.0<x6<3.0), and a combination thereof.Type: ApplicationFiled: June 19, 2015Publication date: August 11, 2016Inventors: Seong Heon KIM, Dongjin YUN, Sung HEO, Kyu Sik KIM, Satoh RYUICHI, Gyeongsu PARK, Hyung-Ik LEE
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Publication number: 20160197122Abstract: Organic photoelectronic devices and image sensors including the organic photoelectronic devices, include a first light-transmitting electrode at a side where light enters, a second light-transmitting electrode opposite to the first light-transmitting electrode, an active layer between the first and second light-transmitting electrodes, and an ultraviolet (UV) ray blocking layer on the first light-transmitting electrode, wherein the ultraviolet (UV) ray blocking layer includes at least one metal oxide having a light transmittance of less than or equal to about 75% for light of less than or equal to about 380 nm.Type: ApplicationFiled: July 8, 2015Publication date: July 7, 2016Inventors: Satoh RYUICHI, Kyu Sik KIM, Woo Young YANG, Yeon-Hee KIM, Yong-Young PARK, Xianyu WENXU, Chang Seung LEE, Yong Wan JIN
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Publication number: 20160049449Abstract: Image sensors include a color photo-sensing photoelectric conversion device, a first color filter and a second color filter disposed under the color photo-sensing photoelectric conversion device, a first photodiode and a second photodiode disposed under the first color filter and the second color filter, respectively, a first light guide member disposed between the first color filter and the first photodiode, and a second light guide member disposed between the second color filter and the second photodiode.Type: ApplicationFiled: February 6, 2015Publication date: February 18, 2016Inventors: Kyu Sik KIM, Satoh RYUICHI, Gae Hwang LEE
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Publication number: 20160020258Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.Type: ApplicationFiled: January 23, 2015Publication date: January 21, 2016Inventors: Kyung Bae PARK, Satoh RYUICHI, Gae Hwang LEE, Kwang Hee LEE, Dong-Seok LEEM, Yong Wan JIN, Tadao YAGI, Chul Joon HEO
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Publication number: 20150376774Abstract: A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space.Type: ApplicationFiled: January 22, 2015Publication date: December 31, 2015Inventors: Satoh RYUICHI, Kyu Sik KIM
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Publication number: 20150311258Abstract: Image sensors, and electronic devices including the same, include a first photo-sensing device sensing light in a full visible to near infrared ray region, a second photo-sensing device sensing light in a blue wavelength region, a third photo-sensing device sensing light in a red wavelength region, and a fourth photo-sensing device sensing light in a green wavelength region. At least one of the first photo-sensing device, the second photo-sensing device, the third photo-sensing device, and the fourth photo-sensing device includes a pair of light-transmitting electrodes facing each other, and a photoactive layer between the light-transmitting electrodes. The photoactive layer includes an organic light-absorbing material.Type: ApplicationFiled: December 10, 2014Publication date: October 29, 2015Inventors: Kyu Sik KIM, Satoh RYUICHI, Hong-Seok LEE