Abstract: A thermoelectric conversion element (100) of the present invention includes a first electrode (105) which has one side joined to a first surface (101a) of an n-type semiconductor via an n-side junction layer (102), and the other side joined to a first surface (103a) of a p-type semiconductor via a p-side junction layer (104), and a second electrode (106) which is joined to each of a second surface (101b) of the n-type semiconductor and a second surface (103b) of the p-type semiconductor via the n-side junction layer (102) and the p-side junction layer (104). Each of the n-type semiconductor (101) and the p-type semiconductor (103) has a composition represented by Formulas (1) and (2) below, and the n-side junction layer (102) and the p-side junction layer (104) include Al.

Abstract: The present invention provides a thermoelectric material excellent in heat resistance with less degradation of thermoelectric characteristics even in a high temperature environment. The thermoelectric material comprises a compound represented by a chemical formula Mg2Si1-xSnx (0<x<1) wherein at least one of the Si site and the Sn site of the compound is replaced with at least one of Sb and Bi, and an added Fe.

Abstract: The present invention provides a thermoelectric material excellent in heat resistance with less degradation of thermoelectric characteristics even in a high temperature environment. The thermoelectric material comprises a compound represented by a chemical formula Mg2Si1?xSnx(0<x<1) wherein at least one of the Si site and the Sn site of the compound is replaced with at least one of Sb and Bi, and an added Fe.

Abstract: A p-type thermoelectric material according to one aspect of the present invention is configured such that at least any one of a Mg site, a Si site, a Sn site and/or a Ge site in a compound composed of magnesium (Mg), silicon (Si), tin (Sn) and germanium (Ge) is substituted with any one or more elements selected from the group consisting of alkali metals of group 1A and gold (Au), silver (Ag), copper (Cu), zinc (Zn), calcium (Ca) and gallium (Ga) of group 1B.

Abstract: A manufacturing method for a p-type semiconductor formed by sintering a compound represented by the general chemical formula: Mg2SiXSnYGeZ (where X+Y+Z=1, X>0, and Y>0, Z>0). The p-type semiconductor has a composition in which X is in the range of 0.00<X?0.25, and Z satisfies the relationship: ?1.00X+0.40?Z??2.00X+0.10, where Z>0.00, and Y is in the range of 0.60?Y?0.95, and Z satisfies either of the relationships: ?1.00Y+1.00?Z??1.00Y+0.75, where 0.60?Y?0.90 and Z>0.00, and ?2.00Y+1.90?Z??1.00Y+0.75, where 0.90?Y?0.95 and Z>0.00.

Abstract: A manufacturing method for a p-type semiconductor formed by sintering a compound represented by the general chemical formula: Mg2SiXSnYGeZ (where X+Y+Z=1, X>0, and Y>0, Z>0). The p-type semiconductor has a composition in which X is in the range of 0.00<X?0.25, and Z satisfies the relationship: ?1.00X+0.40?Z??2.00X+0.10, where Z>0.00, and Y is in the range of 0.60?Y?0.95, and Z satisfies either of the relationships: ?1.00Y+1.00?Z??1.00Y+0.75, where 0.60?Y?0.90 and Z>0.00, and ?2.00Y+1.90?Z??1.00Y+0.75, where 0.90?Y?0.95 and Z>0.00.