Patents by Inventor Satoko Iida

Satoko Iida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10917591
    Abstract: The present disclosure relates to a solid-state imaging device and a method of controlling a solid-state imaging device, and an electronic device for enabling appropriate expansion of a dynamic range with respect to an object moving at a high speed or an object having a large luminance difference between bright and dark to reduce motion distortion (motion artifact). Exposure of a plurality of pixels is individually controlled in units of pixels. The present disclosure can be applied to a solid-state imaging device.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: February 9, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Satoko Iida, Masaki Sakakibara, Yorito Sakano, Naosuke Asari, Masaaki Takizawa, Tomohiko Asatsuma, Shogo Furuya
  • Patent number: 10868056
    Abstract: The present disclosure relates to a solid-state imaging element and an electronic apparatus which are capable of utilizing almost all photoelectrically converted charges for signals during high capacitance. A pixel includes a selection transistor that is disposed on a drain side of an amplification transistor and selects a read-out row, the selection transistor selects the read-out row after reset by a reset transistor, and a transfer transistor performs reference potential read-out during high capacitance prior to reference potential read-out during low capacitance. For example, the present disclosure is applicable to a lamination-type solid-state imaging element.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: December 15, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Yoshiaki Tashiro, Satoko Iida, Yorito Sakano
  • Publication number: 20200260026
    Abstract: Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.
    Type: Application
    Filed: October 12, 2018
    Publication date: August 13, 2020
    Inventors: TOSHIAKI ONO, SATOKO IIDA, TOMOHIKO ASATSUMA, YOSHIAKI KITANO, YUSUKE MATSUMURA, RYOKO KAJIKAWA
  • Publication number: 20200134891
    Abstract: Perception of the relationship between a comfort level and environmental data is facilitated, and appropriate management of air-conditioning equipment is enabled.
    Type: Application
    Filed: June 28, 2018
    Publication date: April 30, 2020
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Yoshihiro OHTA, Natsumi TAMURA, Kenji SATO, Satoko TOMITA, Kazuyuki NAGAHIRO, Kazuo TOMISAWA, Takayoshi IIDA, Hiroyuki YASUDA, Yoshinori NAKAJIMA
  • Publication number: 20200066773
    Abstract: The present disclosure relates to a solid-state imaging element and an electronic apparatus which are capable of utilizing almost all photoelectrically converted charges for signals during high capacitance. A pixel includes a selection transistor that is disposed on a drain side of an amplification transistor and selects a read-out row, the selection transistor selects the read-out row after reset by a reset transistor, and a transfer transistor performs reference potential read-out during high capacitance prior to reference potential read-out during low capacitance. For example, the present disclosure is applicable to a lamination-type solid-state imaging element.
    Type: Application
    Filed: November 30, 2017
    Publication date: February 27, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshiaki TASHIRO, Satoko IIDA, Yorito SAKANO
  • Publication number: 20200029036
    Abstract: The present disclosure relates to a solid-state imaging device and a method of controlling a solid-state imaging device, and an electronic device for enabling appropriate expansion of a dynamic range with respect to an object moving at a high speed or an object having a large luminance difference between bright and dark to reduce motion distortion (motion artifact). Exposure of a plurality of pixels is individually controlled in units of pixels. The present disclosure can be applied to a solid-state imaging device.
    Type: Application
    Filed: March 30, 2018
    Publication date: January 23, 2020
    Inventors: SATOKO IIDA, MASAKI SAKAKIBARA, YORITO SAKANO, NAOSUKE ASARI, MASAAKI TAKIZAWA, TOMOHIKO ASATSUMA, SHOGO FURUYA
  • Publication number: 20190273883
    Abstract: An increase in memory capacity is suppressed in a solid-state imaging element that performs correlated double sampling processing. A pixel circuit sequentially generates each of a predetermined reset level and a plurality of signal levels corresponding to the exposure amount. An analog-to-digital converter converts a predetermined reset level into digital data and outputs the data as reset data, converts each of the plurality of pieces of signal data into digital data, and outputs the data as signal data. An arithmetic circuit holds a difference between the reset data and the signal data output first, as held data in a memory, and then adds the held data and the signal data output second and subsequent times together and causes the memory to hold the added data as new held data.
    Type: Application
    Filed: October 10, 2017
    Publication date: September 5, 2019
    Inventors: MASAKI SAKAKIBARA, YORITO SAKANO, SATOKO IIDA
  • Patent number: 9437764
    Abstract: An exemplary embodiment is a photoelectric conversion device having a photoelectric conversion portion, and a transfer portion. The transfer portion transfers charges of the photoelectric conversion portion. The photoelectric conversion portion includes first and second semiconductor regions of a first conductivity type. Charges generated by photoelectric conversion are accumulated in the first and second semiconductor regions. According to the structure of the first and second semiconductor regions of the exemplary embodiment or the method for manufacturing them, the transfer efficiency of charges can be improved while improving the sensitivity of the photoelectric conversion portion.
    Type: Grant
    Filed: June 9, 2014
    Date of Patent: September 6, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Takanori Watanabe, Takafumi Miki, Satoko Iida, Masahiro Kobayashi, Junji Iwata
  • Publication number: 20160247846
    Abstract: Provided is a photoelectric conversion apparatus including a photoelectric conversion element. The photoelectric conversion element includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region has a shape in plan view including a base portion containing a third semiconductor region in plan view and a first protrusion and a second protrusion each connected to the base portion. When an axial length of the first protrusion is defined as L1, a distance from a connected portion between the first protrusion and the base portion to the third semiconductor region is defined as L2, an axial length of the second protrusion is defined as L3, and a distance from a connected portion between the second protrusion and the base portion to the third semiconductor region is defined as L4, relationships of L1>L3 and L2<L4 are satisfied.
    Type: Application
    Filed: January 22, 2016
    Publication date: August 25, 2016
    Inventors: Satoko Iida, Toru Koizumi, Tatsuya Suzuki, Jun Iba
  • Patent number: 9386249
    Abstract: An image pickup apparatus includes: first and second photoelectric conversion units that are disposed in a semiconductor substrate, are configured to accumulate charges, and are of a first conductivity type; an electrode that is disposed on a region between the first and second photoelectric conversion units and is configured to control an electrical conduction between the first and second photoelectric conversion units; a first semiconductor region that is formed under the electrode and between the first and second photoelectric conversion units, is continuous from the first photoelectric conversion unit to the second photoelectric conversion unit, and is of the first conductivity type; and a second semiconductor region that is formed under the electrode and between the first and second photoelectric conversion units, is provided at a depth different from that of the first semiconductor region, and is of a second conductivity type.
    Type: Grant
    Filed: May 11, 2015
    Date of Patent: July 5, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventors: Satoko Iida, Jun Iba, Itsutaku Sano
  • Publication number: 20160064429
    Abstract: A solid-state image sensor is provided. The sensor includes a semiconductor region having a first conductivity type, and a charge accumulation portion having a second conductivity type. The semiconductor region includes a first semiconductor region, and a second semiconductor region formed below the first semiconductor region and having an impurity concentration higher than that of the first semiconductor region. The charge accumulation portion has a side and a bottom covered with the semiconductor region, and includes at least three regions arranged along a depth direction. A first region formed in a shallowest position has a width larger than that of each of the at least three regions. An impurity concentration of a second region formed in a deepest position is higher than that of each region between the first and second region of the at least three regions.
    Type: Application
    Filed: August 5, 2015
    Publication date: March 3, 2016
    Inventors: Satoko Iida, Takanori Watanabe
  • Patent number: 9261769
    Abstract: An imaging apparatus comprising a plurality of pixels each of which includes a photoelectric conversion portion, and a light-condensing portion arranged on the plurality of pixels, wherein the light-condensing portion has an area smaller than an area of the photoelectric conversion portion.
    Type: Grant
    Filed: January 28, 2013
    Date of Patent: February 16, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuaki Tashiro, Jun Iba, Satoko Iida
  • Publication number: 20150334328
    Abstract: An image pickup apparatus includes: first and second photoelectric conversion units that are disposed in a semiconductor substrate, are configured to accumulate charges, and are of a first conductivity type; an electrode that is disposed on a region between the first and second photoelectric conversion units and is configured to control an electrical conduction between the first and second photoelectric conversion units; a first semiconductor region that is formed under the electrode and between the first and second photoelectric conversion units, is continuous from the first photoelectric conversion unit to the second photoelectric conversion unit, and is of the first conductivity type; and a second semiconductor region that is formed under the electrode and between the first and second photoelectric conversion units, is provided at a depth different from that of the first semiconductor region, and is of a second conductivity type.
    Type: Application
    Filed: May 11, 2015
    Publication date: November 19, 2015
    Inventors: Satoko Iida, Jun Iba, Itsutaku Sano
  • Patent number: 8921900
    Abstract: A solid-state imaging device includes a photoelectric conversion unit that has a charge accumulation region and is configured to accumulate a charge that is generated in accordance with incident light in the charge accumulation region, and a transfer unit configured to transfer the charge accumulated in the charge accumulation region from the charge accumulation region. A potential distribution having a plurality of steps is formed in the charge accumulation region, and the further away from the transfer unit a step of the plurality of steps is, the greater the magnitude of the step is.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: December 30, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Satoko Iida, Ginjiro Toyoguchi, Shin Kikuchi
  • Publication number: 20140367747
    Abstract: An exemplary embodiment is a photoelectric conversion device having a photoelectric conversion portion, and a transfer portion. The transfer portion transfers charges of the photoelectric conversion portion. The photoelectric conversion portion includes first and second semiconductor regions of a first conductivity type. Charges generated by photoelectric conversion are accumulated in the first and second semiconductor regions. According to the structure of the first and second semiconductor regions of the exemplary embodiment or the method for manufacturing them, the transfer efficiency of charges can be improved while improving the sensitivity of the photoelectric conversion portion.
    Type: Application
    Filed: June 9, 2014
    Publication date: December 18, 2014
    Inventors: Takanori Watanabe, Takafumi Miki, Satoko Iida, Masahiro Kobayashi, Junji Iwata
  • Publication number: 20130341683
    Abstract: A solid-state imaging device includes a photoelectric conversion unit that has a charge accumulation region and is configured to accumulate a charge that is generated in accordance with incident light in the charge accumulation region, and a transfer unit configured to transfer the charge accumulated in the charge accumulation region from the charge accumulation region. A potential distribution having a plurality of steps is formed in the charge accumulation region, and the further away from the transfer unit a step of the plurality of steps is, the greater the magnitude of the step is.
    Type: Application
    Filed: June 14, 2013
    Publication date: December 26, 2013
    Inventors: Satoko Iida, Ginjiro Toyoguchi, Shin Kikuchi
  • Patent number: 8411188
    Abstract: A solid-state image pickup device includes a pixel including a photoelectric conversion element that converts light into an electric signal, a feedback amplifying circuit that amplifies a signal of the pixel using an amplification factor that is based on a variable feedback capacitor, a storage capacitor connected to an output node of the amplifying circuit via a first switch, and a load element connected to the output node of the amplifying circuit via a second switch. The second switch is in an on state during any one of or both of a period in which the feedback capacitor is reset and a period in which the first switch is in an on state.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: April 2, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventor: Satoko Iida
  • Patent number: 8400546
    Abstract: An image capturing device comprises a pixel array having a plurality of pixels each including a photoelectric conversion portion, a plurality of signal lines connected to the pixel array, a plurality of column amplifiers configured to respectively amplify signals transferred from the pixel array via the signal lines, the column amplifier comprising a first input terminal, a first output terminal, an amplifier having a second input terminal and a second output terminal, a feedback capacitance arranged between the second input terminal and the first output terminal, an input capacitance having an electrode connected to the first input terminal, and an electrode connected to the second input terminal, a first switch arranged between the second input terminal and the second output terminal, a second switch arranged between the first output terminal and the second output terminal, and a third switch arranged between a reference voltage terminal and the first output terminal.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: March 19, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuya Itano, Satoko Iida, Hidekazu Takahashi, Daisuke Yoshida
  • Publication number: 20120105695
    Abstract: A solid-state image pickup device includes a pixel including a photoelectric conversion element that converts light into an electric signal, a feedback amplifying circuit that amplifies a signal of the pixel using an amplification factor that is based on a variable feedback capacitor, a storage capacitor connected to an output node of the amplifying circuit via a first switch, and a load element connected to the output node of the amplifying circuit via a second switch. The second switch is in an on state during any one of or both of a period in which the feedback capacitor is reset and a period in which the first switch is in an on state.
    Type: Application
    Filed: October 24, 2011
    Publication date: May 3, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Satoko Iida
  • Patent number: 8164668
    Abstract: A photoelectric conversion device includes an isolation portion defining an active region, a photoelectric converter arranged in the active region and including a charge accumulation region containing an impurity of a first conductivity type, a charge voltage converter arranged in the active region, and a transfer electrode arranged on the active region and configured to form a channel to transfer charges generated by the photoelectric converter to the charge voltage converter. In addition, a first semiconductor region is arranged in the active region between the photoelectric converter and the charge voltage converter and is covered with the transfer electrode and contains the impurity of the first conductivity type at a concentration lower than that in the charge accumulation region. A second semiconductor region extends in the active region along an interface of the isolation portion facing at least the first semiconductor region and is of a second conductivity type.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: April 24, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Satoko Iida, Mahito Shinohara