Abstract: A carbon concentration can be measured using a small number of calibration curves even for a silicon wafer containing oxygen at a high concentration. A calibration curve determination method includes determining calibration curves using data sets each including a plurality of data, each data including irradiation dose, oxygen concentration, carbon concentration, and luminescence intensity, the data of each data set having the same irradiation dose and the same oxygen concentration, and the data sets being different in at least one of the irradiation dose and the oxygen concentration, selecting one or more combinations each being a pair of the calibration curves which are equal to each other in the irradiation dose and different from each other in the oxygen concentration, and obtaining a difference between slopes of the paired calibration curves on a log-log plot for each combination.

Abstract: A carbon concentration can be measured using a small number of calibration curves even for a silicon wafer containing oxygen at a high concentration. A calibration curve determination method includes determining calibration curves using data sets each including a plurality of data, each data including irradiation dose, oxygen concentration, carbon concentration, and luminescence intensity, the data of each data set having the same irradiation dose and the same oxygen concentration, and the data sets being different in at least one of the irradiation dose and the oxygen concentration, selecting one or more combinations each being a pair of the calibration curves which are equal to each other in the irradiation dose and different from each other in the oxygen concentration, and obtaining a difference between slopes of the paired calibration curves on a log-log plot for each combination.

Abstract: According to an embodiment, a method of forming a calibration curve is provided. The method includes ion-implanting different doses of an impurity into a plurality of first samples, measuring an intensity of photoluminescence deriving from the impurity by a photoluminescence spectroscopy for the first samples and a second sample made of the same semiconductor. Based on the amount of implanted impurity, the intensity of the photoluminescence, and a concentration of the impurity contained in the second sample measured by a method other than the photoluminescence spectroscopy, a calibration curve is formed.

Abstract: According to an embodiment, a method of forming a calibration curve is provided. The method includes ion-implanting different doses of an impurity into a plurality of first samples, measuring an intensity of photoluminescence deriving from the impurity by a photoluminescence spectroscopy for the first samples and a second sample made of the same semiconductor. Based on the amount of implanted impurity, the intensity of the photoluminescence, and a concentration of the impurity contained in the second sample measured by a method other than the photoluminescence spectroscopy, a calibration curve is formed.

Abstract: A silicon single crystal manufacturing method includes: applying a transverse magnetic field to a melt of polysilicon with a carbon concentration of at most 1.0×1015 atoms/cm3 as a raw material; rotating the crucible at 5.0 rpm or less; allowing inert gas to flow at rate A (m/sec) of formula (1) at a position 20-50% of Y above the melt surface; controlling the rate A within the range of 0.2 to 5,000/d (m/sec) (d: crystal diameter (mm)); and reducing the total power of side and bottom heaters by 3 to 30% and the side heater power by 5 to 45% until the solidified fraction reaches 30%.