Abstract: An antifouling method for polysilicon includes using a tube-shaped resin sheet having an inner surface and an outer surface to prevent the fouling of polysilicon, in which the tube-shaped resin sheet or a resin sheet cut out of the tube-shaped resin sheet is held, with the inner surface being kept in an unexposed state, and the inner surface is exposed just before use and brought into contact with the polysilicon.

Abstract: An antifouling method for polysilicon includes using a tube-shaped resin sheet having an inner surface and an outer surface to prevent the fouling of polysilicon, in which the tube-shaped resin sheet or a resin sheet cut out of the tube-shaped resin sheet is held, with the inner surface being kept in an unexposed state, and the inner surface is exposed just before use and brought into contact with the polysilicon.

Abstract: A package in which a bag formed from a polyethylene-based resin film having a small thickness, more specifically a thickness of 300 ?m or less is filled with crushed polysilicon (Si chunks) and damage to the bag by the Si chunks is effectively prevented. In a polysilicon package in which the bag 1 formed from a polyethylene-based resin having an average thickness of 300 ?m or less is filled with the Si chunks 4, the bag 1 has a heat-sealed bonded part 2 at the bottom and is filled with the Si chunks 4 to ensure that the maximum expansion of the bag 1 becomes 5% or less when the bag 1 is held in an upright state with the bottom as a ground contact surface.

Abstract: A package in which a bag formed from a polyethylene-based resin film having a small thickness, more specifically a thickness of 300 ?m or less is filled with crushed polysilicon (Si chunks) and damage to the bag by the Si chunks is effectively prevented. In a polysilicon package in which the bag 1 formed from a polyethylene-based resin having an average thickness of 300 ?m or less is filled with the Si chunks 4, the bag 1 has a heat-sealed bonded part 2 at the bottom and is filled with the Si chunks 4 to ensure that the maximum expansion of the bag 1 becomes 5% or less when the bag 1 is held in an upright state with the bottom as a ground contact surface.

Abstract: A method for recharging raw material polycrystalline silicon which enables large chunks of polycrystalline silicon to be recharged to a CZ ingot growth process while preventing the CZ crucible from being damaged and restricting a decline of the dislocation free rate and the quality of the grown ingot. Polycrystalline silicon chunks are recharged by first forming cushioning layer silicon of smaller chunks. The cushioning layer of polycrystalline silicon chunks are deposited on a surface of the residual silicon melt in a crucible. Subsequently, large-sized polycrystalline silicon chunks are introduced onto the cushioning layer, the cushioning layer cushioning the impact due to dropping of the large-sized polycrystalline silicon chunks.

Abstract: A method for recharging raw material polycrystalline silicon which enables large chunks of polycrystalline silicon to be recharged to a CZ ingot growth process while preventing the CZ crucible from being damaged and restricting a decline of the dislocation free rate and the quality of the grown ingot. Polycrystalline silicon chunks are recharged by first forming cushioning layer silicon of smaller chunks. The cushioning layer of polycrystalline silicon chunks are deposited on a surface of the residual silicon melt in a crucible. Subsequently, large-sized polycrystalline silicon chunks are introduced onto the cushioning layer, the cushioning layer cushioning the impact due to dropping of the large-sized polycrystalline silicon chunks.