Abstract: A method of manufacturing an SiC semiconductor device includes the steps of forming a first oxide film on a first surface of an SiC semiconductor, removing the first oxide film, and forming a second oxide film constituting the SiC semiconductor device on a second surface exposed as a result of removal of the first oxide film in the SiC semiconductor. Between the step of removing the first oxide film and the step of forming a second oxide film, the SiC semiconductor is arranged in an atmosphere cut off from an ambient atmosphere.

Abstract: The invention provides a methioninase inhibitor to suppress the production of methyl mercaptan that is a causative substance of a bad smell by inhibiting methioninase originated from bacteria, as well as a composition and a food or drink containing the same, wherein the methioninase inhibitor contains an extract obtained from a plant of the family Myrsinaceae, genus Myrsine, preferably Myrsine seguinii as an active ingredient; and further provides a methioninase inhibitor, as well as a composition and a food or drink containing the same, wherein the methioninase inhibitor contains as an active ingredient one or more selected from the group consisting of myrsinoic acid A, myrsinoic acid B, myrsinoic acid C, myrsinoic acid E and myrsinoic acid F; preferably the myrsinoic acid A, myrsinoic acid B, myrsinoic acid C, myrsinoic acid E and myrsinoic acid F are obtained from a plant of the family Myrsinaceae, genus Myrsine, preferably Myrsine seguinii.

Abstract: A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a <01-10> direction and a <0001> direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.

Abstract: The invention provides a methioninase inhibitor to suppress the production of methyl mercaptan that is a causative substance of a bad smell by inhibiting methioninase originated from bacteria, as well as a composition and a food or drink containing the same, wherein the methioninase inhibitor contains an extract obtained from a plant of the family Myrsinaceae, genus Myrsine, preferably Myrsine seguinii as an active ingredient; and further provides a methioninase inhibitor, as well as a composition and a food or drink containing the same, wherein the methioninase inhibitor contains as an active ingredient one or more selected from the group consisting of myrsinoic acid A, myrsinoic acid B, myrsinoic acid C, myrsinoic acid E and myrsinoic acid F; preferably the myrsinoic acid A, myrsinoic acid B, myrsinoic acid C, myrsinoic acid E and myrsinoic acid F are obtained from a plant of the family Myrsinaceae, genus Myrsine, preferably Myrsine seguinii.

Abstract: A method for manufacturing a silicon carbide substrate includes the following steps. A silicon carbide single-crystal substrate is prepared. A silicon carbide epitaxial layer is formed in contact with the silicon carbide single-crystal substrate. A silicon layer is formed in contact with a second surface of the silicon carbide epitaxial layer opposite to a first surface thereof that makes contact with the silicon carbide single-crystal substrate. Accordingly, there are provided a silicon carbide substrate, a method for manufacturing the silicon carbide substrate, and a method for manufacturing a silicon carbide semiconductor device so as to achieve prevention of contamination of a silicon carbide epitaxial layer in a simple manner.

Abstract: A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.

Abstract: There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted. By cleaning the first surface of the SiC semiconductor, a second surface is formed. On the second surface, a Si-containing film is formed. By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed.

Abstract: A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a <01-10> direction and a <0001> direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.

Abstract: A MOSFET includes a silicon carbide substrate, a buffer layer made of silicon carbide formed on the silicon carbide substrate, a drift layer made of silicon carbide of an n conductivity type formed on the buffer layer, a p type body region of a p conductivity type formed in the drift layer to include a main surface of the drift layer opposite to the buffer layer, a source contact electrode formed on the p type body region, and a drain electrode formed on a main surface of the silicon carbide substrate opposite to the buffer layer. A current path region having an impurity concentration higher than that of another region in the drift layer is formed in a region in the drift layer sandwiched between the buffer layer and the body region.

Abstract: A connected substrate having a supporting portion and first and second silicon carbide substrates is prepared. The first silicon carbide substrate has a first backside surface connected to the supporting portion, a first front-side surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. The second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A filling portion for filling the gap is formed. Then, the first and second front-side surfaces are polished. Then, the filling portion is removed. Then, a closing portion for closing the gap is formed.

Abstract: A first vertex of a first single-crystal silicon carbide substrate and a second vertex of a second single-crystal silicon carbide substrate abut each other such that a first side of the first single-crystal silicon carbide substrate and a second side of the second single-crystal silicon carbide substrate are aligned. In addition, at least a part of the first side and at least a part of the second side abut on a third side of a third single-crystal silicon carbide substrate. Thus, in manufacturing a semiconductor device including a composite substrate, process fluctuations caused by a gap between the single-crystal silicon carbide substrates can be suppressed.

Abstract: Substrates are mounted on a plurality of susceptors respectively. The plurality of susceptors on which respective substrates are mounted are placed on a rotational mechanism so that the susceptors are vertically spaced at a predetermined interval. The rotational mechanism on which the plurality of susceptors are placed is rotated. The plurality of susceptors on which the substrates are mounted respectively are heated. Semiconductor thin-films are deposited by supplying a source gas to each of the susceptors that are heated while being rotated, the source gas having been heated while passing through gas flow paths of respective path lengths substantially equal to each other.

Abstract: A method of fabricating a SiC semiconductor device includes the steps of preparing a silicon carbide semiconductor including a first surface having impurities implanted at least partially, forming a second surface by dry etching the first surface of the silicon carbide semiconductor using gas including hydrogen gas, and forming an oxide film constituting the silicon carbide semiconductor device on the second surface.

Abstract: A method of manufacturing an SiC semiconductor device includes the steps of forming a first oxide film on a first surface of an SiC semiconductor, removing the first oxide film, and forming a second oxide film constituting the SiC semiconductor device on a second surface exposed as a result of removal of the first oxide film in the SiC semiconductor. Between the step of removing the first oxide film and the step of forming a second oxide film, the SiC semiconductor is arranged in an atmosphere cut off from an ambient atmosphere.

Abstract: There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted. By cleaning the first surface of the SiC semiconductor, a second surface is formed. On the second surface, a Si-containing film is formed. By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed.

Abstract: A silicon carbide substrate and a method for manufacturing the silicon carbide substrate are obtained, each of which achieves reduced manufacturing cost of semiconductor devices using the silicon carbide substrate. A method for manufacturing a SiC-combined substrate includes the steps of: preparing a plurality of single-crystal bodies each made of silicon carbide (SiC); forming a collected body; connecting the single-crystal bodies to each other; and slicing the collected body. In the step, the plurality of SiC single-crystal ingots are arranged with a silicon (Si) containing Si layer interposed therebetween, so as to form the collected body including the single-crystal bodies. In the step, adjacent SiC single-crystal ingots are connected to each other via at least a portion of the Si layer, the portion being formed into silicon carbide by heating the collected body. In step, the collected body in which the SiC single-crystal ingots are connected to each other is sliced.

Abstract: A first silicon carbide substrate has a first backside surface connected to a supporting portion, a first front-side surface opposite to the first backside surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. A second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface opposite to the second backside surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A closing portion closes the gap. Thereby, foreign matters can be prevented from remaining in a gap between a plurality of silicon carbide substrates provided in a combined substrate.

Abstract: A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.

Abstract: A method of cleaning an SiC semiconductor capable of exhibiting an effect of cleaning an SiC semiconductor is provided. An SiC semiconductor and an SiC semiconductor device capable of achieving improved characteristics are provided. The method of cleaning an SiC semiconductor includes the steps of forming an oxide film on a surface of an SiC semiconductor (step S2) and removing the oxide film (step S3). In the forming step (step S2), the oxide film is formed in a dry atmosphere at a temperature not lower than 700° C. that contains O element. The SiC semiconductor is an SiC semiconductor having a surface and the surface has metal surface density not higher than 1×1012 cm?2. The SiC semiconductor device includes an SiC semiconductor and an oxide film formed on a surface of the SiC semiconductor.

Abstract: A silicon carbide substrate includes a base layer made of silicon carbide, an SiC layer made of single crystal silicon carbide, arranged on the base layer, and having a concentration of inevitable impurities lower than the concentration of inevitable impurities in the base layer, and a cover layer made of silicon carbide, formed on a main surface of the base layer at a side opposite to the SiC layer, and having a concentration of inevitable impurities lower than the concentration of inevitable impurities in the base layer.