Abstract: An organic EL device includes an emitting region and a first anode side organic layer. The first anode side organic layer contains a first material. The emitting region includes a first emitting layer containing first and second host materials and a second emitting layer containing a third host material.

Abstract: A technology for making the heat load on an electronic component attached to a target object smaller than before is provided. The electronic component includes a main body, the main body including an electronic component unit adapted to generate an electrical signal and click feeling in accordance with rotation of an engaged portion, a shaft support having a cylindrical portion to be inserted into a through-hole formed in the target object, and a retaining member; and a control shaft made of metal and capable of rotating the engaged portion, the control shaft being inserted into the cylindrical portion after a reflow soldering process of the target object is completed, and being engaged with the engaged portion. The control shaft inserted into the cylindrical portion is retained by the retaining member.

Abstract: A technology for making the heat load on an electronic component attached to a target object smaller than before is provided. The electronic component includes a main body, the main body including an electronic component unit adapted to generate an electrical signal and click feeling in accordance with rotation of an engaged portion, a shaft support having a cylindrical portion to be inserted into a through-hole formed in the target object, and a retaining member; and a control shaft made of metal and capable of rotating the engaged portion, the control shaft being inserted into the cylindrical portion after a reflow soldering process of the target object is completed, and being engaged with the engaged portion. The control shaft inserted into the cylindrical portion is retained by the retaining member.

Abstract: According to one embodiment, an original plate evaluation method is disclosed. The original plate includes a substrate and N patterns differing from one another in shape. The method includes selecting N1 patterns from the N patterns based on first criterion, obtaining measured values for the N1 patterns, performing a decision whether the obtained measured values satisfy first specification value, selecting N2 patterns from the N patterns based on second criterion, predicting shapes of transfer patterns corresponding to N2 patterns, performing a decision whether the predicted shapes satisfy second specification value, and evaluating the plate based on the decision.

Abstract: According to one embodiment, an original plate evaluation method is disclosed. The original plate includes a substrate and N patterns differing from one another in shape. The method includes selecting N1 patterns from the N patterns based on first criterion, obtaining measured values for the N1 patterns, performing a decision whether the obtained measured values satisfy first specification value, selecting N2 patterns from the N patterns based on second criterion, predicting shapes of transfer patterns corresponding to N2 patterns, performing a decision whether the predicted shapes satisfy second specification value, and evaluating the plate based on the decision.

Abstract: A method for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.

Abstract: A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.

Abstract: A method for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.

Abstract: Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.

Abstract: Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.

Abstract: A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.