Abstract: To provide opaque quartz glass having no water absorbing properties and being excellent in infrared light shielding properties, and a method for its production. In the production of opaque quartz glass of the present invention, a fine amorphous silica powder and a pore forming agent are mixed, then molded and heated at a predetermined temperature, to obtain opaque quartz glass wherein contained pores are closed pores, the average pore size of pores is from 5 to 20 ?m, and the content density of pores is high, whereby the heat shielding properties are high.

Abstract: To provide opaque quartz glass having no water absorbing properties and being excellent in infrared light shielding properties, and a method for its production. In the production of opaque quartz glass of the present invention, a fine amorphous silica powder and a pore forming agent are mixed, then molded and heated at a predetermined temperature, to obtain opaque quartz glass wherein contained pores are closed pores, the average pore size of pores is from 5 to 20 ?m, and the content density of pores is high, whereby the heat shielding properties are high.

Abstract: An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Abstract: An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.