Abstract: A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 ? to 500 ? in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.

Abstract: A method of forming resist patterns comprises the steps of (a) applying and forming a chemically amplified photoresist film, (b) applying a treating agent with a pH value of 1.3 to 4.5 onto said chemically amplified photoresist film, (c) baking said chemically amplified photoresist film after at least one of the steps of applying and forming said chemically amplified photoresist film and applying said treating agent, (d) selectively exposing said chemically amplified photoresist film, (e) post exposure-baking said chemically amplified photoresist film, and (f) developing said chemically amplified photoresist film, wherein the contact angle of a non-exposed portion of said chemically amplified photoresist film to a developing solution after wash with water to remove the treating agent on the photoresist and spin-drying before development is made lower by 10° to 110° than that in the case where said treating agent is not applied.

Abstract: A method of forming resist patterns comprises the steps of (a) applying and forming a chemically amplified photoresist film, (b) applying a treating agent with a pH value of 1.3 to 4.5 onto said chemically amplified photoresist film, (c) baking said chemically amplified photoresist film after at least one of the steps of applying and forming said chemically amplified photoresist film and applying said treating agent, (d) selectively exposing said chemically amplified photoresist film, (e) post exposure-baking said chemically amplified photoresist film, and (f) developing said chemically amplified photoresist film, wherein the contact angle of a non-exposed portion of said chemically amplified photoresist film to a developing solution after wash with water to remove the treating agent on the photoresist and spin-drying before development is made lower by 10° to 110° than that in the case where said treating agent is not applied.

Abstract: A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.

Abstract: A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 Å to 500 Å in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.

Abstract: A method of forming a pattern in which production of reaction products in the interface between an organic anti-reflective coating and a radiation sensitive material coating is suppressed, the number of residues of an etchable layer formed after etching is decreased, and which provides a etched pattern having high resolution and good dimensional accuracy. According to the method, an etchable layer (11) composed of polysilicon coating an organic anti-reflective coating (12), and a radiation sensitive material coating (13) composed of a chemically amplified resist material containing as acid generators both (a) onium salt compound and (b) at least one of a sulfone compound and a sulfonate compound are formed on a semiconductor substrate (10), the radiation sensitive material coating (13) is imagewise exposed through the mask (14) and developed to form a patterned radiation sensitive material coating (13b).

Abstract: A chemically amplified resist composition is disclosed which shows a high sensitivity, high resolution, excellent processing adaptability and excellent processing stability, which can form good pattern profile and which is suited as a finely processable material for use in manufacturing integrated circuit elements or the like. The chemically amplified resist composition comprises at least (a) an organic material containing a substituent or substituents capable of being released in the presence of an acid and (b) compounds capable of generating an acid upon exposure to radiation (acid-generators), composed of at least one onium salt and at least one of sulfone compounds and sulfonate compounds. This chemically amplified resist composition preferably further contains a basic compound.

Abstract: A chemically amplified resist composition is disclosed which shows a high sensitivity, high resolution, excellent processing adaptability and excellent processing stability, which can form good pattern profile and which is suited as a finely processable material for use in manufacturing integrated circuit elements or the like. The chemically amplified resist composition comprises at least (a) an organic material containing a substituent or substituents capable of being released in the presence of an acid and (b) compounds capable of generating an acid upon exposure to radiation (acid-generators), composed of at least one onium salt and at least one of sulfone compounds and sulfonate compounds. This chemically amplified resist composition preferably further contains a basic compound.

Abstract: A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.

Abstract: A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.

Abstract: A radiation-sensitive composition comprising:an acid-generating compound capable of generating an acid upon exposure to radiation and represented by the formula (I): ##STR1## wherein X, Y and R.sup.1 to R.sup.5 have the following meanings: X and Y: independently a direct bond, C.sub.1 -C.sub.8 alkylene, C.sub.1 -C.sub.4 alkene, --O--R.sup.11 --O-- (wherein R.sup.11 is an alkylene group having 1 to 4 carbon atoms), --NH--, --O--, --S--, --SO.sub.2 --, --CO--, --COO-- or --CONR.sup.12 -- (wherein R.sup.12 is a hydrogen atom, C.sub.1 -C.sub.8 alkyl, alkylaryl, halogenated alkyl, halogenated aryl, a halogen atom, alkoxy, phenoxy, alkylsulfonyl-oxy, halogenated alkylsulfonyl-oxy, or substituted or unsubstituted arylsulfonyl-oxy);R.sup.1 to R.sup.4 : a hydrogen atom, C.sub.1 -C.sub.

Abstract: Acid-labile group protected hydroxystyrene polymers having recurrent pendant groups such as 1-(2-methanecarbonyl oxyethoxy)ethoxy group and 1-(2-N-methylcarbamatoethoxy) ethoxy group. A resist containing the polymer, a photo acid generator, a base, additives and a solvent is sensitive to UV, electron beam and X-ray. In the resist, acid is formed in the exposed area during irradiation, which deprotects acid-labile group catalytically during application of post-exposure baking. Positive patterns are formed after development using an alkaline solution.

Abstract: A radiation-sensitive composition is disclosed which includes (a) a binder insoluble in water but soluble in or capable of being swelled in an aqueous alkali solution, (b) a dissolution inhibitor composed of (b1) a poly(N,O-acetal) having a general formula: ##STR1## wherein R.sup.3 is alkyl or substituted or unsubstituted aryl, R.sup.4 is a divalent group selected from alkylene, cycloalkylene, alkene or alkyne, R.sup.5 is alkyl, alkene, alkyne or cycloalkyl, X is --OCO--, --CO-- or --NHCO--, and p is a number not less than 1, and/or (b2) a phenol compound having a hydroxyl group which is protected by a group which can be cleaved in the presence of an acid, (c) a photosensitive compound capable of generating an acid when exposed to an active radiation, (d) a base capable of being decomposed when exposed to an active radiation to form a neutral compound derived therefrom, (e) a plasticizer, and (f) a solvent.

Abstract: A radiation-sensitive composition is disclosed which includes:(a) a copolymer represented by the general formula: ##STR1## wherein R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group, Ar is a substituted or unsubstituted phenylene group or a substituted or unsubstituted cyclohexylene group, X is a divalent group represented by --SO.sub.2 -- or --CO--, m and n are individually an integer not less than 1;(b) a dissolution inhibitor composed of a compound represented by the general formula: ##STR2## wherein R.sup.3 is an alkyl group or a substituted or unsubstituted aryl group, R.sup.4 is an alkylene group, a cycloalkylene group, an alkenylene group or an alkynylene group, R.sup.

Abstract: A chemically amplified resist material comprising: a) a homopolymer or a copolymer of hydroxystyrene or hydroxystyrene partly protected by a group sensitive to an acid such as a tetrahydropyranyl or t-butoxycarbonyl group, b) a dissolution inhibitor such as poly(N,O-acetal) or phenol or bisphenol protected by a group cleavable with an acid, c) a photosensitive compound capable of generating an acid upon exposure, d) a base capable of degrading upon radiation to regulate the line width in a period between the exposure step and the processing steps after exposure, e) a low-molecular weight phenolic or polyphenolic compound having a structure represented by the following general formula or a mixture of the phenolic or polyphenolic compounds: ##STR1## where n is an integer of 1 to 5, m is an integer of 0 to 4, n+m.ltoreq.5, and p is an integer of 1 to 10, each R is a C.sub.1 -C.sub.12 alkyl group or an unsubstituted or substituted cycloalkyl group or a C.sub.1 -C.sub.

Abstract: An organic molecular crystal comprising the compound N-isopropyl-N'-(4-acetylphenyl)-urea is used for preparing an optical wavelength conversion device. Especially, the device may comprise a core and a clad wherein the organic crystal is used as the core.

Abstract: The compounds 4-chloro-4'-hydroxybenzophenone, methyl 3,4-diaminobenzoate, N-(4-aminobenzenesulfonyl)-acetamide, methyl 4-hydroxy-3,5-dimethoxybenzoate, 2-chloro-4-cyano-6-methylaniline, 4'-hydroxy-2-phenylacetophenone and methyl 3,4-dihydroxybenzoate form high quality crystals with high melting point. They are useful for second order non-linear optical process devices such as wavelength conversion devices.