Patents by Inventor Satoru HABUKA

Satoru HABUKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vanadium nitride film, and member coated with vanadium nitride film and method for manufacturing the same
    Patent number: 11613463
    Abstract: In a vanadium nitride film formed on a surface of a base material, a ratio V [at %]/N [at %] between a vanadium element concentration and a nitrogen element concentration in the film is 1.08 or more and a chlorine element concentration in the film is 1 at % or more and 5 at % or less.
    Type: Grant
    Filed: April 27, 2021
    Date of Patent: March 28, 2023
    Assignee: DOWA THERMOTECH CO., LTD.
    Inventors: Satoru Habuka, Hiroyuki Matsuoka, Wataru Sakakibara
  • VANADIUM SILICON CARBIDE FILM, VANADIUM SILICON CARBIDE FILM COATED MEMBER, AND MANUFACTURING METHOD OF VANADIUM SILICON CARBIDE FILM COATED MEMBER
    Publication number: 20220411271
    Abstract: A vanadium silicon carbide film contains vanadium, silicon, and carbon, in which the total of a vanadium element concentration, a silicon element concentration, and a carbon element concentration in the film is 90 at % or more.
    Type: Application
    Filed: September 29, 2020
    Publication date: December 29, 2022
    Applicant: DOWA THERMOTECH CO., LTD.
    Inventors: Satoru HABUKA, Hiroyuki MATSUOKA
  • Vanadium silicon carbonitride film, vanadium silicon carbonitride film coated member, and method for manufacturing the same
    Patent number: 11091367
    Abstract: A vanadium silicon carbonitride film includes vanadium, silicon, carbon, and nitrogen, wherein when vanadium element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as a, and silicon element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as b, 0.30?a/b?1.3 and 0.30?a+b?0.70 are satisfied, and a total of the vanadium element concentration, the silicon element concentration, the carbon element concentration, and the nitrogen element concentration in the film is 90 [at %] or more.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: August 17, 2021
    Assignee: DOWA THERMOTECH CO., LTD.
    Inventors: Satoru Habuka, Hiroyuki Matsuoka, Wataru Sakakibara
  • VANADIUM NITRIDE FILM, AND MEMBER COATED WITH VANADIUM NITRIDE FILM AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20210246023
    Abstract: In a vanadium nitride film formed on a surface of a base material, a ratio V [at %]/N [at %] between a vanadium element concentration and a nitrogen element concentration in the film is 1.08 or more and a chlorine element concentration in the film is 1 at % or more and 5 at % or less.
    Type: Application
    Filed: April 27, 2021
    Publication date: August 12, 2021
    Applicant: DOWA THERMOTECH CO., LTD.
    Inventors: Satoru HABUKA, Hiroyuki MATSUOKA, Wataru SAKAKIBARA
  • Vanadium silicon nitride film, member coated with vanadium silicon nitride film and method for manufacturing the same
    Patent number: 11072857
    Abstract: A vanadium silicon nitride film formed as a hard film to a base material satisfies 0.30?a/b?1.7 and 0.24?b?0.36 when a=vanadium element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]) and b=silicon element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]), and has a hardness of 2300 HV or more.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: July 27, 2021
    Assignee: DOWA THERMOTECH CO., LTD.
    Inventors: Satoru Habuka, Hiroyuki Matsuoka, Wataru Sakakibara
  • Vanadium nitride film, and member coated with vanadium nitride film and method for manufacturing the same
    Patent number: 11014814
    Abstract: In a vanadium nitride film formed on a surface of a base material, a ratio V [at %]/N [at %] between a vanadium element concentration and a nitrogen element concentration in the film is 1.08 or more and a chlorine element concentration in the film is 1 at % or more and 5 at % or less.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: May 25, 2021
    Assignee: DOWA THERMOTECH CO., LTD.
    Inventors: Satoru Habuka, Hiroyuki Matsuoka, Wataru Sakakibara
  • VANADIUM SILICON CARBONITRIDE FILM, VANADIUM SILICON CARBONITRIDE FILM COATED MEMBER, AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20200346928
    Abstract: A vanadium silicon carbonitride film includes vanadium, silicon, carbon, and nitrogen, wherein when vanadium element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as a, and silicon element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as b, 0.30?a/b?1.3 and 0.30?a+b?0.70 are satisfied, and a total of the vanadium element concentration, the silicon element concentration, the carbon element concentration, and the nitrogen element concentration in the film is 90 [at %] or more.
    Type: Application
    Filed: August 8, 2018
    Publication date: November 5, 2020
    Applicant: DOWA THERMOTECH CO., LTD.
    Inventors: Satoru HABUKA, Hiroyuki MATSUOKA, Wataru SAKAKIBARA
  • Intermediate layer formed between base material and DLC layer and film-forming method thereof
    Patent number: 10731243
    Abstract: In an intermediate layer formed between a base material and a DLC layer, a Ti layer and a TiC layer formed on a surface of the Ti layer are provided, and a carbon content of the entire layer containing the Ti layer and the TiC layer is 53 at % or more and 77 at % or less.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: August 4, 2020
    Assignee: DOWA THERMOTECH CO., LTD.
    Inventors: Hiroki Tashiro, Hiroyuki Matsuoka, Wataru Sakakibara, Soichiro Nogami, Satoru Habuka
  • VANADIUM NITRIDE FILM, AND MEMBER COATED WITH VANADIUM NITRIDE FILM AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20200198967
    Abstract: In a vanadium nitride film formed on a surface of a base material, a ratio V [at %]/N [at %] between a vanadium element concentration and a nitrogen element concentration in the film is 1.08 or more and a chlorine element concentration in the film is 1 at % or more and 5 at %/or less.
    Type: Application
    Filed: July 27, 2017
    Publication date: June 25, 2020
    Applicant: DOWA THERMOTECH CO., LTD.
    Inventors: Satoru HABUKA, Hiroyuki MATSUOKA, Wataru SAKAKIBARA
  • VANADIUM SILICON NITRIDE FILM, MEMBER COATED WITH VANADIUM SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20190390331
    Abstract: A vanadium silicon nitride film formed as a hard film to a base material satisfies 0.30?a/b?1.7 and 0.24?b?0.36 when a=vanadium element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]) and b=silicon element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]), and has a hardness of 2300 HV or more.
    Type: Application
    Filed: December 28, 2017
    Publication date: December 26, 2019
    Applicant: DOWA THERMOTECH CO., LTD.
    Inventors: Satoru HABUKA, Hiroyuki MATSUOKA, Wataru SAKAKIBARA
  • INTERMEDIATE LAYER FORMED BETWEEN BASE MATERIAL AND DLC LAYER AND FILM-FORMING METHOD THEREOF
    Publication number: 20180363128
    Abstract: In an intermediate layer formed between a base material and a DLC layer, a Ti layer and a TiC layer formed on a surface of the Ti layer are provided, and a carbon content of the entire layer containing the Ti layer and the TiC layer is 53 at % or more and 77 at % or less.
    Type: Application
    Filed: December 7, 2016
    Publication date: December 20, 2018
    Applicant: DOWA THERMOTECH CO., LTD.
    Inventors: Hiroki TASHIRO, Hiroyuki MATSUOKA, Wataru SAKAKIBARA, Soichiro NOGAMI, Satoru HABUKA