Abstract: The present invention provides an immortalized natural killer cell line retaining the function and characteristics intrinsic to natural killer cells, a method for establishing the same, a method for screening for useful substances using the immortalized natural killer cell line, and a cell vaccine. By culturing natural killer cells obtained by isolating natural killer cells from the spleen of a transgenic mouse to which a large T-antigen gene of SV40 temperature-sensitive mutant tsA58 is introduced, a cell line which proliferates and activates in the presence of Interleukin-2, has azurophilic granules within cytoplasm, and retains an ability to kill a target cell without presensitization and/or an ability to kill target cells coated with an antibody, is established.

Abstract: An apparatus for processing particulate dust when a substrate is arranged in a high vacuum enclosure, plasma is generated in the high vacuum enclosure, and a reactive material is introduced into the high vacuum enclosure to perform processing of the substrate. At least one collecting electrode is provided around the substrate in the high vacuum enclosure other than the electrode that generates plasma, and particulates generated in plasma are efficiently removed by applying a predetermined electric potential of a direct-current or an alternating current to the collecting electrode, and thus a deposition problem onto an inner wall of the vacuum enclosure and a deterioration problem of processing accuracy and a film quality associated with flowing of the particulates onto the substrate are solved.

Abstract: The object of the present invention is to make possible generation of high-density plasma even in the center of a plasma generation region. A plasma generation apparatus comprises a vacuum vessel 11, gas induction unit 12, exhaust unit 13, cylindrical discharge electrode 14, high-frequency oscillators 19 and 21, ring-shaped permanent magnets 15 and 16, and two disk-shaped walls 17 and 18. The discharge electrode 14 is fashioned so as to enclose a plasma generation region 41. The permanent magnets 15 and 16 form prescribed magnetic force lines. These magnetic force lines have portions that are roughly parallel to the center axis 42 of the discharge electrode 14, the lengths of which parallel portions become longer as the magnetic force lines approach the center axis 42. The two walls 17 and 18 define the scope of the plasma generation region 41 in the dimension of the center axis 42 of the discharge electrode 14.

Abstract: The object of the present invention is to make possible generation of high-density plasma even in the center of a plasma generation region. A plasma generation apparatus comprises a vacuum vessel 11, gas induction unit 12, exhaust unit 13, cylindrical discharge electrode 14, high-frequency oscillators 19 and 21, ring-shaped permanent magnets 15 and 16, and two disk-shaped walls 17 and 18. The discharge electrode 14 is fashioned so as to enclose a plasma generation region 41. The permanent magnets 15 and 16 form prescribed magnetic force lines. These magnetic force lines have portions that are roughly parallel to the center axis 42 of the discharge electrode 14, the lengths of which parallel portions become longer as the magnetic force lines approach the center axis 42. The two walls 17 and 18 define the scope of the plasma generation region 41 in the dimension of the center axis 42 of the discharge electrode 14.

Abstract: A plasma generating apparatus and processing method, which generate high-density plasma, even in the central portion of the plasma generating zone. The apparatus comprises rectangular electrodes, a rectangular fistulous discharge electrode which surrounds the plasma generating zone, and a vacuum chamber of rectangular cross-section. Permanent magnets surround the discharge electrode, produce predetermined magnetic lines of force with portions which extend approximately parallel to the central axis of discharge electrode. A pair of parallel plate electrodes define the extension of the plasma generating zone in the direction of the central axis of the discharge electrode. The apparatus is configured such that the magnetic lines of force passing through the central portion of the plasma generating zone do not intersect with the electrodes.

Abstract: A plasma processing system provided with a vacuum chamber for accommodating a substrate and for generation of plasma in a space in the front of the same, an antenna provided at the vacuum chamber, and a high frequency power source for supplying high frequency power to the antenna. The antenna emits high frequency power, generates plasma inside the vacuum chamber, and processes the surface of the substrate by the plasma. In the plasma processing system, the antenna has a disk-shaped conductor plate having a predetermined thickness. A coaxial waveguide having a folded portion is formed around the disk-shaped conductor plate. The folded portion of the waveguide is provided with a short-circuit 3 dB directional coupler having an impedance matching function. The antenna having the above structure prevents the generation of a standing wave in the high frequency wave propagation path from the high frequency power source to the vacuum chamber and generates high density plasma by supply of a large power.

Abstract: A plasma processing system provided with a vacuum chamber for accommodating a substrate and for generation of plasma in a space in the front of the same, an antenna provided at the vacuum chamber, and a high frequency power source for supplying high frequency power to the antenna. The antenna emits high frequency power, generates plasma inside the vacuum chamber, and processes the surface of the substrate by the plasma. In the plasma processing system, the antenna has a disk-shaped conductor plate having a predetermined thickness. A coaxial waveguide having a folded portion is formed around the disk-shaped conductor plate. The folded portion of the waveguide is provided with a short-circuit 3 dB directional coupler having an impedance matching function. The antenna having the above structure prevents the generation of a standing wave in the high frequency wave propagation path from the high frequency power source to the vacuum chamber and generates high density plasma by supply of a large power.

Abstract: An object is to make it possible to prevent electron temperature distribution from becoming uneven at surface of a process object when dimensions of the process object are large. A region division unit 30 encloses the inside of a ring-shaped discharge electrode 15 in the vicinity of that discharge electrode 15, thereby dividing the interior region of a tube-shaped vacuum vessel 11 in a direction perpendicular to the center axis Z thereof into a plasma generation region R1 and a plasma diffusion region R2, This region division unit 30 has a tube-shaped grid 301. This grid 301 has a plurality of electron passing holes and exhibits electrical conductivity. This grid 301, furthermore, is set in place concentrically with the vacuum vessel 11 so as to be positioned on the outside of a substrate W.