Abstract: Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, a respective finger of one IDT electrode being separated from an adjacent finger of the other IDT electrode by a first pitch distance, and reflectors formed on the substrate interposing the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, each of the reflectors including a plurality of fingers separated from each other by a second pitch distance and extending in a same direction of extension as the plurality of fingers of the pair of IDT electrodes.

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a piezoelectric layer. An interdigital transducer electrode can be in electrical communication with the piezoelectric layer. The interdigital transducer electrode can include a first bus bar. First fingers can extend from the first bus bar. The interdigital transducer electrode can include a second bus bar. Second fingers can extend from the second bus bar. The interdigital transducer electrode can have a first side and a second side separated by a centerline between the first bus bar and the second bus bar. A first mass of the first side of the interdigital transducer electrode can be different from a second mass of the second side of the interdigital transducer electrode. The first fingers can be asymmetric about the centerline in an active region of the surface acoustic wave device. A piston-mode structure can be asymmetric about the centerline between the first bus bar and the second bus bar.

Abstract: Aspects and embodiments disclosed herein are generally directed to a surface acoustic wave device comprising a first surface acoustic wave resonator having a first aperture length and a first stack thickness, a second surface acoustic wave resonator having a second aperture length and a second stack thickness, one of the first aperture length and second aperture length being different, or the first stack thickness and the second stack thickness being different, and a common reflector shared by the first surface acoustic wave resonator and the second surface acoustic wave resonator.

Abstract: Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, fingers of one IDT electrode arranged interleaved with fingers of the other IDT electrode, reflectors formed on the substrate, one of the reflectors being adjacent to one side of the pair of IDT electrodes and another reflector being adjacent to the opposite side of the pair of IDT electrodes so as to interpose the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, and a dielectric film covering the pair of IDT electrodes and the reflectors, the dielectric film having a first thickness covering at least a portion of the reflectors, the dielectric film having a second thickness covering the pair of IDT electrodes, the first thickness being different from the second thickness.

Abstract: Aspects and embodiments disclosed herein include an acoustic wave device comprising a first pair of IDT electrodes disposed on a substrate, fingers of the first pair of IDT electrodes separated by a first pitch distance from adjacent fingers, a second pair of IDT electrodes disposed on the substrate, fingers of the second pair of IDT electrodes separated by a second pitch distance from adjacent fingers, and a common reflector disposed between the first pair of IDT electrodes and the second pair of IDT electrodes, the common reflector including a plurality of fingers separated from each other by a third pitch distance, which is greater than the first pitch distance and is equal to or smaller than the second pitch distance.

Abstract: Aspects of this disclosure relate to an acoustic wave filter with parallel band pass filters. Each band pass filter can be an acoustic wave filter having a passband. One of the parallel band pass filters can have higher passband frequencies than another of the parallel band pass filters. The passbands of the parallel band pass filters can overlap in an overlap band. One of the parallel band pass filters can have a higher impedance in the overlap band than another of the parallel band pass filters.

Abstract: Aspects of this disclosure relate to a radio frequency system with an antenna, a radio frequency amplifier, and parallel acoustic wave filters. The parallel acoustic wave filters can each be a band pass filter having a passband and resonator area. The passbands of the parallel acoustic filters can be overlap in an overlap band. One of the parallel acoustic wave filters can have a smaller resonator area than another of the parallel acoustic wave filters.

Abstract: Aspects of this disclosure relate to an acoustic wave filter that includes acoustic wave resonators arranged to filter a radio frequency signal. The acoustic wave resonators include a first acoustic wave resonator. The acoustic wave filter includes a circuit element in parallel with the first acoustic wave resonator in a stage of the acoustic wave filter. The circuit element and the first acoustic wave resonator have different resonant frequencies. The circuit element can reduce an impact of bulk mode of the first acoustic wave resonator on insertion loss of the acoustic wave filter. The first acoustic wave resonator can be a surface acoustic wave resonator in certain embodiments. The circuit element can be a second acoustic wave resonator or a capacitor, for example.

Abstract: Aspects and embodiments disclosed herein include an acoustic wave filter comprising a first and a second input/output port, a plurality of temperature compensated surface acoustic wave (TC-SAW) series resonators coupled in series between the first and the second input/output port and having a layer of piezoelectric material, an interdigital transducer (IDT) electrode arranged over the layer of piezoelectric material, and a temperature compensation layer formed over the IDT electrode, the plurality of TC-SAW series resonators including at least one first TC-SAW series resonator and at least one second TC-SAW series resonator, a thickness of the temperature compensation layer of the at least one first TC-SAW series resonator being less than that of the at least one second TC-SAW series resonator, a plurality of TC-SAW shunt resonators coupling the plurality of TC-SAW series resonators to ground, and an inductor connected in parallel to the at least one first TC-SAW series resonator.

Abstract: Aspects of this disclosure relate to a radio frequency filter with two pass bands. The RF filter employs a first RF bandpass filter coupled to a common RF input and a common RF output. The RF filter further employs a second RF bandpass filter coupled to the common RF input and the common RF output. A first RF pass band of the first RF bandpass filter and a second RF pass band of the RF second bandpass filter are overlapping RF pass bands. Related methods and wireless communication devices are also disclosed.

Abstract: Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, fingers of one IDT electrode arranged interleaved with fingers of the other IDT electrode, reflectors formed on the substrate, one of the reflectors being adjacent to one side of the pair of IDT electrodes and another reflector being adjacent to the opposite side of the pair of IDT electrodes so as to interpose the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, and a dielectric film covering the pair of IDT electrodes and the reflectors, the dielectric film having a first thickness covering at least a portion of the reflectors, the dielectric film having a second thickness covering the pair of IDT electrodes, the first thickness being different from the second thickness.

Abstract: Aspects and embodiments disclosed herein include an acoustic wave device comprising a first pair of IDT electrodes disposed on a substrate, fingers of the first pair of IDT electrodes separated by a first pitch distance from adjacent fingers, a second pair of IDT electrodes disposed on the substrate, fingers of the second pair of IDT electrodes separated by a second pitch distance from adjacent fingers, and a common reflector disposed between the first pair of IDT electrodes and the second pair of IDT electrodes, the common reflector including a plurality of fingers separated from each other by a third pitch distance, which is greater than the first pitch distance and is equal to or smaller than the second pitch distance.

Abstract: Aspects of this disclosure relate to a radio frequency filter with two pass bands. The RF filter employs a first RF bandpass filter coupled to a common RF input and a common RF output. The RF filter further employs a second RF bandpass filter coupled to the common RF input and the common RF output. A first RF pass band of the first RF bandpass filter and a second RF pass band of the RF second bandpass filter are overlapping RF pass bands. Related methods and wireless communication devices are also disclosed.

Abstract: Aspects of this disclosure relate to an acoustic wave filter that includes acoustic wave resonators arranged to filter a radio frequency signal. The acoustic wave resonators include a first acoustic wave resonator. The acoustic wave filter includes a circuit element in parallel with the first acoustic wave resonator in a stage of the acoustic wave filter. The circuit element and the first acoustic wave resonator have different resonant frequencies. The circuit element can reduce an impact of bulk mode of the first acoustic wave resonator on insertion loss of the acoustic wave filter. The first acoustic wave resonator can be a surface acoustic wave resonator in certain embodiments. The circuit element can be a second acoustic wave resonator or a capacitor, for example.

Abstract: Aspects of this disclosure relate to an acoustic wave filter with parallel band pass filters. Each band pass filter can be an acoustic wave filter having a passband. One of the parallel band pass filters can have higher passband frequencies than another of the parallel band pass filters. The passbands of the parallel band pass filters can overlap in an overlap band. One of the parallel band pass filters can have a higher impedance in the overlap band than another of the parallel band pass filters.

Abstract: Aspects of this disclosure relate to a radio frequency system with an antenna, a radio frequency amplifier, and parallel acoustic wave filters. The parallel acoustic wave filters can each be a band pass filter having a passband and resonator area. The passbands of the parallel acoustic filters can be overlap in an overlap band. One of the parallel acoustic wave filters can have a smaller resonator area than another of the parallel acoustic wave filters.

Abstract: Aspects of this disclosure relate to an acoustic wave filter that includes acoustic wave resonators arranged to filter a radio frequency signal. The acoustic wave resonators include a first acoustic wave resonator. The acoustic wave filter includes a circuit element in parallel with the first acoustic wave resonator in a stage of the acoustic wave filter. The circuit element and the first acoustic wave resonator have different resonant frequencies. The circuit element can reduce an impact of bulk mode of the first acoustic wave resonator on insertion loss of the acoustic wave filter. The first acoustic wave resonator can be a surface acoustic wave resonator in certain embodiments. The circuit element can be a second acoustic wave resonator or a capacitor, for example.

Abstract: Aspects of this disclosure relate to an acoustic wave filter that includes acoustic wave resonators arranged to filter a radio frequency signal. The acoustic wave resonators include a first acoustic wave resonator. The acoustic wave filter includes a circuit element in parallel with the first acoustic wave resonator in a stage of the acoustic wave filter. The circuit element and the first acoustic wave resonator have different resonant frequencies. The circuit element can reduce an impact of bulk mode of the first acoustic wave resonator on insertion loss of the acoustic wave filter. The first acoustic wave resonator can be a surface acoustic wave resonator in certain embodiments. The circuit element can be a second acoustic wave resonator or a capacitor, for example.

Abstract: An acoustic wave device is provided with a low-frequency side filter having a low-frequency side passband, a high-frequency side filter having a high-frequency side passband, and first and second balanced terminals. The low-frequency side filter is connected to a first unbalanced terminal. The low-frequency side passband is a frequency band from a first minimum frequency to a first maximum frequency. The high-frequency side filter is connected to a second unbalanced terminal. The high-frequency side passband is a frequency band from a second minimum frequency to a second maximum frequency. The low-frequency side filter includes a first longitudinally-coupled acoustic wave resonator and a first one-terminal pair acoustic wave resonator connected in series to the first longitudinally-coupled acoustic wave resonator. An antiresonant frequency of the first one-terminal pair acoustic wave resonator is set to be higher than the first maximum frequency and lower than the second minimum frequency.

Abstract: An elastic wave filter including a substrate, a signal line disposed on the substrate and connecting a first signal terminal to a second signal terminal, a plurality of series resonators connected to the signal line in series, and a plurality of parallel resonators connected to the signal line. At least one of the series resonator having an anti-resonant frequency closest to the passband of the filter among the plurality of series resonators, and/or the parallel resonator having a resonant frequency closest to the passband of the filter among the plurality of parallel resonators, is covered with a dielectric film that is relatively thicker than a dielectric film covering the other series and/or parallel resonators.