Abstract: An information processing device includes an acquisition unit that acquires mobile object information, parcel information, pickup delivery information as information regarding at least one of pickup and delivery, map information, weather information, and traffic information, a calculation control unit that calculates a delivery company burden, as a cost defrayment by a delivery company, in regard to each combination of target parcels and a mobile object by using the mobile object information, the parcel information, the pickup delivery information, the map information, the weather information and the traffic information, a determination unit that determines an optimum combination out of a plurality of combinations based on the delivery company burden calculated in regard to each combination of target parcels and a mobile object, and an output unit that outputs the optimum combination.

Abstract: There are no drugs or food medicines that can prevent or ameliorate, among side effects caused by drugs, particularly peripheral neuropathy that is caused by anticancer drugs such as oxaliplatin. An agent for preventing or ameliorating peripheral neuropathy including at least one selected from xylitol, L-talitol, and D-threitol as an active ingredient can ameliorate tingling limbs, limb pain, decreased deep tendon reflexes, muscle weakness, allodynia, hyperalgesia, hand fine motor skill disability, gait disturbance, stumbling, falling, flexion impairment (difficulty or inability to sit on one's knees, cross-legged, sideways, in a chair, etc.), limb paralysis, or the like, induced by drugs such as anticancer drugs or diabetes.

Abstract: An object is to provide a semiconductor device which suppresses poor bonding between a metal pattern and an electrode terminal due to insufficient temperature rise at the time of bonding the metal pattern and the electrode terminal. The electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof, of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively, the first branch portion has a wider width than that of the second branch portion, and the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.

Abstract: An object is to provide a semiconductor device in which heat generated in a lead electrode when conducting a large current can be reduced and the bonding quality between the lead electrode and a semiconductor element can be inspected easily. A semiconductor device includes: a base portion; a semiconductor element mounted on the base portion; a metal part erect with respect to the semiconductor element and having one end bonded, with a bonding material, to a principal surface of the semiconductor element opposite to another principal surface of the semiconductor element mounted on the base portion; and a lead electrode connected to the semiconductor element through the metal part. The lead electrode includes a through hole extending in a thickness direction. The metal part connects the semiconductor element to the lead electrode, while inserted into the through hole of the lead electrode together with a part of the bonding material.

Abstract: A power module includes an insulating substrate, a heat dissipation member, and an electrode plate. An IGBT and a diode are mounted on the insulating substrate. The heat dissipation member is bonded to the insulating substrate by first solder. The electrode plate is disposed so as to overlap at least a part of the semiconductor element. The main surface of the insulating substrate is curved so as to have a shape convex toward the heat dissipation member. The first solder is thicker at the edges than at the center in a plan view. The semiconductor element is bonded to the electrode plate by second solder.

Abstract: A semiconductor element bonding substrate according to the present invention includes an insulating plate, and a metal pattern bonded to a main surface of the insulating plate. A main surface of the metal pattern on an opposite side of the insulating plate includes a bonding region to which a semiconductor element is bonded by a solder. The metal pattern includes at least one concave part located in the main surface. The at least one concave part is located closer to an edge of the bonding region in relation to a center part of the bonding region in the bonding region.

Abstract: From among a U-plane and a C-plane, the U-plane is installed in a first user site which has a base station, and the C-plane is installed in a C-plane site (any site that is not a user site). A system sets a U-plane inter-site path which is an inter-site communication path that connects a first user site with a second user site via a wide area network, and a C-plane inter-site path which is an inter-site communication path that connects a C-plane site with the first user site via the wide area network. In addition, the system sets an in-site communication path which is a communication path within the first user site and which connects to an inter-site communication path. A U-plane inter-site path is an inter-site communication path via which data is transmitted or received by a U-plane. A C-plane inter-site path is an inter-site communication path via which a signal is transmitted or received by a C-plane.

Abstract: A semiconductor element bonding substrate according to the present invention includes an insulating plate, and a metal pattern bonded to a main surface of the insulating plate. A main surface of the metal pattern on an opposite side of the insulating plate includes a bonding region to which a semiconductor element is bonded by a solder. The metal pattern includes at least one concave part located in the main surface. The at least one concave part is located closer to an edge of the bonding region in relation to a center part of the bonding region in the bonding region.

Abstract: An object is to provide a semiconductor device in which heat generated in a lead electrode when conducting a large current can be reduced and the bonding quality between the lead electrode and a semiconductor element can be inspected easily. A semiconductor device includes: a base portion; a semiconductor element mounted on the base portion; a metal part erect with respect to the semiconductor element and having one end bonded, with a bonding material, to a principal surface of the semiconductor element opposite to another principal surface of the semiconductor element mounted on the base portion; and a lead electrode connected to the semiconductor element through the metal part. The lead electrode includes a through hole extending in a thickness direction. The metal part connects the semiconductor element to the lead electrode, while inserted into the through hole of the lead electrode together with a part of the bonding material.

Abstract: An object is to provide a semiconductor device which suppresses poor bonding between a metal pattern and an electrode terminal due to insufficient temperature rise at the time of bonding the metal pattern and the electrode terminal. The electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof, of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively, the first branch portion has a wider width than that of the second branch portion, and the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.

Abstract: A semiconductor device includes an insulating substrate formed by integrating a ceramic base plate and a cooling fin; a multiple of plate interconnection members; and a plurality of semiconductor elements. The one faces of the semiconductor elements are bonded to the ceramic base plate of the insulating substrate with a chip-bottom solder, and the other faces thereof are bonded to the plate-interconnection members with a chip-top solder so that plate interconnection members correspond respectively to the semiconductor elements. The chip-bottom solder and the chip-top solder both contain mainly Sn and 0.3-3 wt. % Ag and 0.5-1 wt. % Cu. This allows the semiconductor device to be reduced in size without impairing heat dissipation.

Abstract: From among a U-plane and a C-plane, the U-plane is installed in a first user site which has a base station, and the C-plane is installed in a C-plane site (any site that is not a user site). A system sets a U-plane inter-site path which is an inter-site communication path that connects a first user site with a second user site via a wide area network, and a C-plane inter-site path which is an inter-site communication path that connects a C-plane site with the first user site via the wide area network. In addition, the system sets an in-site communication path which is a communication path within the first user site and which connects to an inter-site communication path. A U-plane inter-site path is an inter-site communication path via which data is transmitted or received by a U-plane. A C-plane inter-site path is an inter-site communication path via which a signal is transmitted or received by a C-plane.

Abstract: In a method for manufacturing a semiconductor device, a plurality of first provisional fixing portions are supplied on a front surface of a substrate such that the plurality of first provisional fixing portions are spaced from each other and thus dispersed. A first solder layer processed into a plate to be a first soldering portion is disposed in contact with the plurality of first provisional fixing portions. A semiconductor chip is disposed on the first solder layer. In addition a conductive member in the form of a flat plate is disposed thereon via a second provisional fixing portion and a second solder layer. A reflow process is performed to solder the substrate, the semiconductor chip and the conductive member together.

Abstract: The semiconductor device includes a semiconductor element substrate having an insulation property, and a wire for positioning the semiconductor element with respect to the semiconductor element substrate. The semiconductor element substrate includes a disposition region for disposing the semiconductor element. The wire is provided at least at a part of the periphery of the disposition region.

Abstract: A semiconductor device includes an insulating substrate formed by integrating a ceramic base plate and a cooling fin; a multiple of plate interconnection members; and a plurality of semiconductor elements. The one faces of the semiconductor elements are bonded to the ceramic base plate of the insulating substrate with a chip-bottom solder, and the other faces thereof are bonded to the plate-interconnection members with a chip-top solder so that plate interconnection members correspond respectively to the semiconductor elements. The chip-bottom solder and the chip-top solder both contain mainly Sn and 0.3-3 wt. % Ag and 0.5-1 wt. % Cu. This allows the semiconductor device to be reduced in size without impairing heat dissipation.

Abstract: This amphibious vehicle is provided with a body (11), a traveling device (12) that causes the body (11) to travel on land, a sailing device (13) that causes the body (11) to sail on water, a front flap (31) of which the distal end is inclined upward and the proximal end is rotatably supported by a horizontal shaft (34) on the front end of the body (11), a hydraulic damper (32) serving as a damping member that damps displacement of the front flap (31) relative to the body (11), and a compression coil spring (33) serving as a restoring member that restores the position of the front flap (31) relative to the body (11).

Abstract: The semiconductor device includes a semiconductor element substrate having an insulation property, and a wire for positioning the semiconductor element with respect to the semiconductor element substrate. The semiconductor element substrate includes a disposition region for disposing the semiconductor element. The wire is provided at least at a part of the periphery of the disposition region.

Abstract: A semiconductor element bonding substrate according to the present invention includes an insulating plate, and a metal pattern bonded to a main surface of the insulating plate. A main surface of the metal pattern on an opposite side of the insulating plate includes a bonding region to which a semiconductor element is bonded by a solder. The metal pattern includes at least one concave part located in the main surface. The at least one concave part is located closer to an edge of the bonding region in relation to a center part of the bonding region in the bonding region.

Abstract: An actuator, having a case portion that includes a permanent magnet; a movable portion that is able to move in respect to the case portion; and elastic members that are provided between the case portion and the movable portion, wherein: the movable portion includes a weight portion that has a flat portion that faces the case portion and an opening portion in the flat portion, and a coil that is provided on the inside of the opening portion, wherein: a groove for connecting the opening portion and the outer surface of the weight portion is provided in the flat portion.

Abstract: The actuator includes a stationary portion that has a permanent magnet; a movable portion, having a coil, that can move in respect to the stationary portion; an elastic member that is provided on a side of the movable portion in the movement direction; and a lead wire that is provided next to the elastic member, to supply electric power to the coil while bending.