Patents by Inventor Satoru KIKUSHIMA

Satoru KIKUSHIMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ETCHING METHOD AND ETCHING APPARATUS
    Publication number: 20230395400
    Abstract: An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.
    Type: Application
    Filed: August 17, 2023
    Publication date: December 7, 2023
    Inventors: Yoshiki IGARASHI, Satoru KIKUSHIMA, Takayuki SUGA, Jun LIN, Chengya CHU
  • Etching method and etching apparatus
    Patent number: 11791175
    Abstract: An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.
    Type: Grant
    Filed: May 13, 2021
    Date of Patent: October 17, 2023
    Assignee: Tokyo Electron Limited
    Inventors: Yoshiki Igarashi, Satoru Kikushima, Takayuki Suga, Jun Lin, Chengya Chu
  • ETCHING METHOD AND ETCHING APPARATUS
    Publication number: 20210358772
    Abstract: An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.
    Type: Application
    Filed: May 13, 2021
    Publication date: November 18, 2021
    Inventors: Yoshiki IGARASHI, Satoru KIKUSHIMA, Takayuki SUGA, Jun LIN, Chengya CHU
  • ETCHING METHOD AND ETCHING APPARATUS
    Publication number: 20190378724
    Abstract: There is provided an etching method which includes: providing a substrate inside a chamber, the substrate including a silicon oxide-based material and other material, the silicon oxide-based material including an etching target portion having a width of 10 nm or less and an aspect ratio of 10 or more; and selectively etching the etching target portion with respect to the other material by supplying an HF gas and an OH-containing gas to the substrate.
    Type: Application
    Filed: June 7, 2019
    Publication date: December 12, 2019
    Inventors: Satoshi TODA, Satoru KIKUSHIMA, Ken NAKAGOMI, Yoshie OZAWA, Jun LIN