Patents by Inventor Satoru Miyoshi
Satoru Miyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240149773Abstract: Disclosed is a seat including: sensors which includes a first cushion sensor provided at a seat cushion in a position corresponding to buttocks of an occupant, a second cushion sensor provided at the seat cushion and located farther frontward than the first cushion sensor, a first back sensor provided at a seat back and located in a lower position thereof, and a second back sensor provided at the seat back and located above the first back sensor; and a controller connected to the sensors and thereby allowed to acquire pressure values from the respective sensors. The controller is configured to identify the motion of the occupant based on outputs of at least two sensors of the first cushion sensor, the second cushion sensor, the first back sensor, and the second back sensor.Type: ApplicationFiled: January 9, 2024Publication date: May 9, 2024Inventors: Hiroyuki KAKU, Atsushi KUSANO, Hiroyuki NUMAJIRI, Satoshi FUJITA, Takako MIYOSHI, Munetaka KOWA, Ryuichiro HIROSE, Yoshikazu ITO, Yosuke HIGASHI, Satoshi SUZUKI, Ryosuke SATO, Kento UETAKE, Yasuharu OTSUKA, Satoru KANEDA
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Patent number: 11979482Abstract: A detection system includes: a signal output unit configured to output, to a measurement target, a measurement signal that exhibits a predetermined temporal change; a signal measurement unit configured to measure a response signal, to the measurement signal, from the measurement target; a calculation unit configured to calculate an impulse response of the measurement target, based on a measurement result of the response signal measured by the signal measurement unit; and a detection unit configured to detect abnormality regarding the measurement target, based on the impulse response calculated by the calculation unit.Type: GrantFiled: October 8, 2020Date of Patent: May 7, 2024Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Satoru Sakurazawa, Isao Kato, Takanori Miyoshi, Yoichi Hata, Takumi Asaina
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Patent number: 11958385Abstract: A seat includes a seat body and a sensor configured to acquired information on an occupant seated on the seat body. The seat includes a coating as a location marker that marks a location of the sensor to render the location visually recognizable from outside the seat body.Type: GrantFiled: March 29, 2019Date of Patent: April 16, 2024Assignee: TS TECH CO., LTD.Inventors: Hiroyuki Kaku, Ryuichiro Hirose, Hiroyuki Numajiri, Satoshi Fujita, Takako Miyoshi, Munetaka Kowa, Atsushi Kusano, Yoshikazu Ito, Yousuke Higashi, Satoshi Suzuki, Ryosuke Sato, Kento Uetake, Yasuharu Otsuka, Satoru Kaneda
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Patent number: 11932147Abstract: Disclosed is a seat including: sensors which includes a first cushion sensor provided at a seat cushion in a position corresponding to buttocks of an occupant, a second cushion sensor provided at the seat cushion and located farther frontward than the first cushion sensor, a first back sensor provided at a seat back and located in a lower position thereof, and a second back sensor provided at the seat back and located above the first back sensor; and a controller connected to the sensors and thereby allowed to acquire pressure values from the respective sensors. The controller is configured to identify the motion of the occupant based on outputs of at least two sensors of the first cushion sensor, the second cushion sensor, the first back sensor, and the second back sensor.Type: GrantFiled: February 28, 2019Date of Patent: March 19, 2024Assignee: TS TECH CO., LTD.Inventors: Hiroyuki Kaku, Atsushi Kusano, Hiroyuki Numajiri, Satoshi Fujita, Takako Miyoshi, Munetaka Kowa, Ryuichiro Hirose, Yoshikazu Ito, Yosuke Higashi, Satoshi Suzuki, Ryosuke Sato, Kento Uetake, Yasuharu Otsuka, Satoru Kaneda
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Patent number: 8270902Abstract: A communication system is provided comprising an environment-side electrode and a living body-side electrode sandwiching an insulating layer and electrically insulated from each other, a grounding electrode which is electrically connected to the environment-side electrode, and a reception amplifier which amplifies a potential difference between the environment-side electrode and the living body-side electrode, wherein the grounding electrode has a side surface section which extends along a vertical direction.Type: GrantFiled: June 15, 2009Date of Patent: September 18, 2012Assignee: Semiconductor Components Industries, LLCInventors: Kazuo Hasegawa, Hirohisa Suzuki, Satoru Miyoshi, Kazuya Kogure
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Patent number: 7796495Abstract: An optical disk comprising two layers including a signal recording layer and an image recording layer further comprises a metal reflective layer formed on a surface of the image recording layer on the incidence side of laser light. The image recording layer is capable of forming a visible image in response to an increase in temperature caused by application of laser light to the metal reflective layer. The visible image is capable of being visually observed from a side opposite to the incidence side.Type: GrantFiled: August 5, 2005Date of Patent: September 14, 2010Assignee: Sanyo Electric Co., Ltd.Inventors: Akira Tsukihashi, Tsuyoshi Yamamoto, Satoru Miyoshi, Shinichi Nakahashi
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Publication number: 20090325485Abstract: A communication system is provided comprising an environment-side electrode and a living body-side electrode sandwiching an insulating layer and electrically insulated from each other, a grounding electrode which is electrically connected to the environment-side electrode, and a reception amplifier which amplifies a potential difference between the environment-side electrode and the living body-side electrode, wherein the grounding electrode has a side surface section which extends along a vertical direction.Type: ApplicationFiled: June 15, 2009Publication date: December 31, 2009Applicants: SANYO ELECTRIC CO., LTD., SANYO SEMICONDUCTOR CO., LTD.Inventors: Kazuo HASEGAWA, Hirohisa SUZUKI, Satoru MIYOSHI, Kazuya KOGURE
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Publication number: 20060151605Abstract: One of a first laser driver and a second laser driver for respectively driving a first laser light source and a second laser light source is selected according to a type of storage media constituting an object of processing, drive pulses are generated from that laser driver based on label information, and label information is written to a label layer of the storage media, constituting an object of processing, using laser light output by driving a laser light source with these drive pulses.Type: ApplicationFiled: January 3, 2006Publication date: July 13, 2006Applicant: SANYO ELECTRIC CO., LTD.Inventors: Satoru Miyoshi, Akira Tsukihashi
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Publication number: 20060028967Abstract: An optical disk comprising two layers including a signal recording layer and an image recording layer further comprises a metal reflective layer formed on a surface of the image recording layer on the incidence side of laser light. The image recording layer is capable of forming a visible image in response to an increase in temperature caused by application of laser light to the metal reflective layer. The visible image is capable of being visually observed from a side opposite to the incidence side.Type: ApplicationFiled: August 5, 2005Publication date: February 9, 2006Applicant: Sanyo Electric Co., Ltd.Inventors: Akira Tsukihashi, Tsuyoshi Yamamoto, Satoru Miyoshi, Shinichi Nakahashi
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Patent number: 6326254Abstract: Wells of n- and p-type are formed in a p-type substrate. Wells of p-type are also formed in the n-type well. Both the p-type wells are formed by the same process at the same time to make MOS transistors have different threshold voltages. MOS transistors having a long gate length and a low threshold voltage are formed in the p-well in the n-well, and MOS transistors having a short gate length and a high threshold voltage are formed in the p-well at the outside of the n-well. Fuses are formed over the p-type wells in the n-type well at a high density.Type: GrantFiled: May 1, 1998Date of Patent: December 4, 2001Assignees: Fujitsu Limited, Fujitsu VLSI LimitedInventors: Taiji Ema, Satoru Miyoshi, Tatsumi Tsutsui, Masaya Katayama, Masayoshi Asano, Kenichi Kanazawa
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Patent number: 6320240Abstract: There are provided a semiconductor device which can prevent short-circuit of the contact plugs and prevent exposure of wirings to ensure sufficient reliability even if level difference is caused in device isolation regions, and a method of manufacturing the same. Device isolation regions 13 are formed on a semiconductor substrate 11 to partition the semiconductor substrate 11 into a plurality of device regions 12. Then, word lines 14 are formed on the semiconductor substrate 11, and then peripheral regions of the word lines 14 are covered with a protection film. Then, impurity diffusion regions formed in the device regions 12, and then a plug insulating film is formed on an overall upper surface of the substrate 11. Then, opening portions 18a for connecting end portions of the device regions 12 are formed in the plug insulating film.Type: GrantFiled: February 16, 2000Date of Patent: November 20, 2001Assignee: Fujitsu LimitedInventor: Satoru Miyoshi
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Patent number: 5803951Abstract: A gas chromatograph has a control unit which normally carries out a pressure control so as to keep the pressure inside the vaporization chamber at a specified target level while the flow rate of a carrier gas into the vaporization chamber is kept constant. When a liquid sample is injected to cause a sudden rise in the pressure, the normal pressure control is temporarily stopped, say, for keeping the split ratio unchanged. In order to keep unchanged the retention time for components being analyzed although the pressure inside the vaporization chamber rises, the target value for the pressure control is reduced for an appropriate length of time after the temporary stopping of pressure control is discontinued.Type: GrantFiled: April 3, 1997Date of Patent: September 8, 1998Assignee: Shimadzu CorporationInventors: Toyohito Wada, Kazuya Nakagawa, Satoru Miyoshi, Hiroyuki Tsujiide
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Patent number: 5789788Abstract: Wells of n- and p-type are formed in a p-type substrate. Wells of p-type are also formed in the n-type well. Both the p-type wells are formed by the same process at the same time to make MOS transistors have different threshold voltages. MOS transistors having a long gate length and a low threshold voltage are formed in the p-well in the n-well, and MOS transistors having a short gate length and a high threshold voltage are formed in the p-well at the outside of the n-well. Fuses are formed over the p-type wells in the n-type well at a high density.Type: GrantFiled: November 20, 1996Date of Patent: August 4, 1998Assignees: Fujitsu Limited, Fujitsu VLSI LimitedInventors: Taiji Ema, Satoru Miyoshi, Tatsumi Tsutsui, Masaya Katayama, Masayoshi Asano, Kenichi Kanazawa
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Patent number: 5391221Abstract: A gas chromatograph for operation selectably in both split mode and splitless wide bore injection mode includes a capillary column, a sample injection chamber at the inlet of the column, a three-way valve, a first piping line connected between one of the two outlets of the three-way valve and the sample injection chamber, a split line connected to the sample injection chamber immediately upstream of the inlet of the column for discharging therethrough a portion of a gas being sent out from the sample injection chamber, a second piping line connected between the other of the outlets of the three-way valve and the split line, and a third piping line connected between the first and second piping lines. By properly controlling the total carrier gas flow rate and the column inlet pressure, the split ratio can be controlled easily. By varying the split ratio appropriately during an analysis, the amount of the carrier gas to be wasted in the case of a split mode of operation can be significantly reduced.Type: GrantFiled: March 19, 1993Date of Patent: February 21, 1995Assignee: Shimadzu CorporationInventors: Toyoaki Fukushima, Kazuya Nakagawa, Masahito Ueda, Satoru Miyoshi
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Patent number: 5339673Abstract: A gas chromatograph for operation in split mode is controlled by calculating the column flow rate and the total carrier gas flow rate from the length and inner diameter of the column and specified values for temperature and column inlet pressure, adjusting the split flow rate such that the pressure value measured by a pressure sensor becomes equal to the specified pressure value and control the total carrier flow rate to be equal to the calculated value therefor. In this manner, the split ratio of the gas chromatograph can be maintained easily at a specified value. The amount of carrier gas to be wasted can be significantly reduced by appropriately varying the split ratio with time during the course of an analysis.Type: GrantFiled: March 19, 1993Date of Patent: August 23, 1994Assignee: Shimadzu CorporationInventors: Kazuya Nakagawa, Satoru Miyoshi, Toyoaki Fukushima