Abstract: A production method of an additive manufactured object is provided. The method is an EB-based additive manufacturing method of spreading a pure copper powder, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a first layer, newly spreading a pure copper powder on the first layer, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a second layer, and repeating the foregoing process to add layers. The pure copper powder is a pure copper powder with a Si coating formed thereon, and the preheating temperature is set to be 400° C. or higher and less than 800° C.

Abstract: A production method of an additive manufactured object according to an EB-based additive manufacturing method of spreading a pure copper powder, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a first layer, newly spreading a pure copper powder on the first layer, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a second layer, and repeating the foregoing process to add layers, wherein used as the pure copper powder is a pure copper powder with a Si coating formed thereon, and wherein the preheating temperature is set to be 400° C. or higher and less than 800° C.

Abstract: A copper heat dissipation material having a satisfactory heat dissipation performance is provided. The copper heat dissipation material has an alloy layer containing at least one metal selected from Cu, Co, Ni, W, P, Zn, Cr, Fe, Sn and Mo on one or both surfaces, in which surface roughness Sz of the one or both surfaces, measured by a laser microscope using laser light of 405 nm in wavelength, is 5 ?m or more.

Abstract: Provided herein is a printed wiring board that can desirably dissipate the heat of a heat-generating component. The printed wiring board includes one or more wires, and one or more heat-generating components. The one or more wires include a rolled copper foil, either partly or as a whole. The one or more heat-generating components and the one or more wires are directly or indirectly connected to each other.

Abstract: A structure having a metal material for heat radiation that is capable of favorably radiating heat from a heat generating component is provided. A structure having a metal material for heat radiation, containing a heat generating component and a heat radiating member for radiating heat from the heat generating component, wherein the heat radiating member has a layer structure containing a metal material for heat radiation and a graphite sheet.

Abstract: Provided herein is a printed wiring board that can desirably dissipate the heat of a heat-generating component. The printed wiring board includes one or more wires, and one or more heat-generating components. The one or more wires include a rolled copper foil, either partly or as a whole. The one or more heat-generating components and the one or more wires are directly or indirectly connected to each other.

Abstract: A structure having a metal material for heat radiation that is capable of favorably radiating heat from a heat generating component is provided. A structure having a metal material for heat radiation, comprising a heat generating component, a heat generating component protective member that is provided to cover a part or the entire of the heat generating component and to be spaced from the heat generating component, and a heat radiating member that is provided on a face of the heat generating component protective member on the side of the heat generating component to be spaced from a surface of the heat generating component on the side of the heat generating component protective member, wherein the heat radiating member contains a metal material for heat radiation at least on a surface of the heat radiating member on the side of the heat generating component.

Abstract: A copper heat dissipation material having a satisfactory heat dissipation performance is provided. The copper heat dissipation material has an alloy layer containing at least one metal selected from Cu, Co, Ni, W, P, Zn, Cr, Fe, Sn and Mo on one or both surfaces, in which surface roughness Sz of the one or both surfaces, measured by a laser microscope using laser light of 405 nm in wavelength, is 5 ?m or more.

Abstract: A copper heat dissipation material having a satisfactory heat dissipation performance is provided. The copper heat dissipation material has an alloy layer containing at least one metal selected from Cu, Co, Ni, W, P, Zn, Cr, Fe, Sn and Mo on one or both surfaces, in which surface roughness Sz of the one or both surfaces, measured by a laser microscope using laser light of 405 nm in wavelength, is 5 ?m or more.

Abstract: A surface-treated metal material good in heat absorbency and heat releasability is provided. The surface-treated metal material has a heat conductivity of 32 W/(m·K) or higher; and a color difference ?L based on JIS Z8730 of the surface thereof satisfying ?L??40.

Abstract: A copper heat dissipation material having a satisfactory heat dissipation performance is provided. The copper heat dissipation material has an alloy layer containing at least one metal selected from Cu, Co, Ni, W, P, Zn, Cr, Fe, Sn and Mo on one or both surfaces, in which surface roughness Sz of the one or both surfaces, measured by a laser microscope using laser light of 405 nm in wavelength, is 5 ?m or more.

Abstract: Disclosed is a technique capable of preventing occurrence of warping in a nitride compound semiconductor layer, and by which a nitride compound semiconductor layer having small variations in the in-plane off angle can be grown with good reproducibility. Specifically disclosed is a method for producing a nitride compound semiconductor substrate using an HVPE process, wherein a low-temperature protective layer is formed on a rare earth perovskite substrate at a first growth temperature (a first step), and a thick layer composed of a nitride compound semiconductor is formed on the low-temperature protective layer at a second growth temperature that is higher than the first growth temperature (a second step). In the first step, the supply amounts of HCl and NH3 are controlled so that the supply ratio of HCl to NH3, namely the supply ratio III/V is 0.016-0.13, and the low-temperature protective layer has a film thickness of 50-90 nm.

Abstract: Disclosed is a crystal growing apparatus, which is useful when growing a nitride semiconductor crystal by means of hydride vapor phase deposition, and which is capable of effectively preventing a reaction tube from breaking, and is capable of growing the high quality nitride semiconductor single crystal. Also disclosed are a method for manufacturing the nitride compound semiconductor crystal using such crystal growing apparatus, and the nitride compound semiconductor crystal. In the horizontal-type crystal growing apparatus for growing the nitride compound semiconductor crystal on a base substrate using the hydride vapor phase deposition, between the reaction tube (11) end portion (upstream flange (11a)) on the side where raw material gas supply tubes (14, 15) are disposed, and a base substrate disposing position (substrate holder (13)), a plurality of partitioning plates (20) that partition the reaction tube in the axis direction are provided.

Abstract: Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a GaN thin film template substrate which is suitable for growing a GaN thick film with a fine property; and a GaN single crystal growing apparatus. Provided is a manufacturing method of a GaN single crystal by a hydride vapor phase epitaxy, wherein the hydride vapor phase epitaxy comprises: spraying HCl (hydrogen chloride) onto Ga (gallium) which is heated and fused in a predetermined temperature to generate GaCl (gallium chloride); and forming a GaN thin film by a reaction of the generated GaCl (gallium chloride) with NH3 (ammonia) gas which is hydroxide gas on a substrate, the manufacturing method comprising supplying the NH3 gas in a vicinity of the substrate (for example, at a position which is separated from the substrate by a distance of 0.7-4.

Abstract: A low-temperature protective layer having AlN is grown on a rare earth perovskite substrate and a first GaN based semiconductor layer having Alx1Ga1-x1N where composition x1 of Al is 0.40?x1?0.45 is grown thereon. Then, a second GaN semiconductor layer having Alx2Ga1-x2N where composition x2 of Al is 0?x2?0.45 is grown on the first GaN based semiconductor layer.

Abstract: An epitaxial growth substrate includes: a surface not roughening over a surface roughness of 10 nm during a temperature-rise process by which a temperature increases until reaching a growth temperature of a nitride-based compound semiconductor layer, the growth temperature being 900° C. to 1050° C., wherein the nitride-based compound semiconductor layer is epitaxially grown directly on the epitaxial growth substrate at the growth temperature.

Abstract: Provided is a technique for stabilizing characteristics of an NdGaO3 substrate used for epitaxial growth so as to grow a fine nitride compound semiconductor single crystal with good reproducibility. A single crystal of NdGaO3 grown by a crystal pulling method is subjected to an annealing treatment at 1400° C. or more and 1500° C. or less for a predetermined time period (for example, 10 hours) in the air, and this annealed NdGaO3 substrate is used as a substrate for epitaxial growth.

Abstract: Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a GaN thin film template substrate which is suitable for growing a GaN thick film with a fine property; and a GaN single crystal growing apparatus. Provided is a manufacturing method of a GaN single crystal by a hydride vapor phase epitaxy, wherein the hydride vapor phase epitaxy comprises: spraying HCl (hydrogen chloride) onto Ga (gallium) which is heated and fused in a predetermined temperature to generate GaCl (gallium chloride); and forming a GaN thin film by a reaction of the generated GaCl (gallium chloride) with NH3 (ammonia) gas which is hydroxide gas on a substrate, the manufacturing method comprising supplying the NH3 gas in a vicinity of the substrate (for example, at a position which is separated from the substrate by a distance of 0.7-4.