Abstract: An acoustic wave device is disclosed. The acoustic wave device includes a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, and an anti-refection layer over a conductive layer of the interdigital transducer electrode. The conductive layer can include aluminum, for example. The anti-reflection layer can include silicon. The anti-reflection layer can be free from a material of the interdigital transducer electrode. The acoustic wave device can further include a temperature compensation layer positioned over the anti-reflection layer in certain embodiments.

Abstract: There is provided a work vehicle including a partition wall to keep partition between a first space zone as part of an internal space of the transmission case in which a differential mechanism is located and a second space zone as part of the internal space which is adjacent to the first space zone. An upper space is disposed above the partition wall and configured to allow lubricating oil scooped up from the first space zone by a ring gear to flow in the second space zone. A flow-out path is disposed below the upper space and configured to allow the lubricating oil to flow out of the second space zone to the first space zone.

Abstract: There is provided a work vehicle including a partition wall to keep partition between a first space zone as part of an internal space of the transmission case in which a differential mechanism is located and a second space zone as part of the internal space which is adjacent to the first space zone. An upper space is disposed above the partition wall and configured to allow lubricating oil scooped up from the first space zone by a ring gear to flow in the second space zone. A flow-out path is disposed below the upper space and configured to allow the lubricating oil to flow out of the second space zone to the first space zone.

Abstract: In a resin-sealed laser diode device, in order to prevent the sealing resin on the front light-emitting end face of the laser diode chip from being deteriorated by the laser beam, a thermosetting rubber-like organic silicone resin layer is formed on the front light-emitting end face to a thickness of at least 50 &mgr;m on the extension of the surface of the active layer. On the side of the rear light-emitting end-face of the laser diode chip, the rubber-like organic silicone resin layer on the photo-diode is curved upwardly with respect to the light receiving surface of the latter. Furthermore, in order to prevent the far field pattern of the laser beam from being made irregular, at least the surface of the end-face protecting film on the light-emitting end face essentially contains silicon dioxide.

Abstract: A lead frame 32 has projecting portions 36, 37 projecting in a right-and-left direction, like arms, from the sides of its broad end portion 32a. The projecting piece portions 36, 37 include mold region parts 36a, 37a that are molded within a flat type sealing resin member 35, and exposed piece portions 36b, 37b that are exposed to the outside from the sealing resin member 35. One of the exposed parts, 36b, has an arcuate segment 36c inscribed in a hypothetical circle drawn with radius R about the point of light emission, C, on an LD chip 1. The other exposed part 37b has an arcuate segment 37c inscribed in the hypothetical circle drawn with radius R. A semiconductor laser device having these arcuate segments can be fitted into a stepped accommodating hole of an instrument and set in place there, just as can a can type semiconductor laser device. The point of light emission, C, on the LD chip 1 is also fixed. Thus, neither a shift in the point of light emission, C, nor the peeling of resin arises.