Abstract: A medium-discharging device includes: a medium-discharging section that discharges a medium; a medium-receiving tray that receives the medium discharged by the medium-discharging section; a light-emitting section that emits light to the medium-receiving tray; and a control section that controls the light-emitting section, in which the medium-receiving tray is configured to switch between a first state in which the medium-receiving tray is stored in an apparatus main body that includes the medium-discharging section and a second state in which the medium-receiving tray protrudes from the apparatus main body, and the control section controls the light-emitting section in accordance with a state or operation of the medium-receiving tray.

Abstract: An air conditioning device has: a refrigerant circuit that includes a compressor, a switching valve, a cascade heat exchanger, an expansion valve and an outdoor heat exchanger connected to one another by a first pipe through which a refrigerant flows, and that performs a defrosting operation in which the refrigerant discharged from the compressor is introduced into the outdoor heat exchanger; a heat-transfer medium circuit that includes a pump, the cascade heat exchanger, and the indoor heat exchanger connected to one another by a second pipe through which a heat-transfer medium flows; and a control device that controls the compressor and the pump. When an amount of heat storage of the heat-transfer medium is less than a threshold, the control device reduces the heating capability of the indoor heat exchanger when the air conditioning device transitions from a heating operation to the defrosting operation.

Abstract: A medium-discharging device includes: a medium-discharging section that discharges a medium; a medium-receiving tray that receives the medium discharged by the medium-discharging section; a light-emitting section that emits light to the medium-receiving tray; and a control section that controls the light-emitting section, in which the medium-receiving tray is configured to switch between a first state in which the medium-receiving tray is stored in an apparatus main body that includes the medium-discharging section and a second state in which the medium-receiving tray protrudes from the apparatus main body, and the control section controls the light-emitting section in accordance with a state or operation of the medium-receiving tray.

Abstract: A production method of a micromachine includes a polysilicon film forming step which overlays grooves, defined in an upper surface of a sacrificial layer on a silicon substrate, with polysilicon layer so as to be flat. The production method includes a first processing step for filling the grooves by adding a lower laid portion of the polysilicon layer onto a sacrificial layer. The lower laid portion has a thickness greater than 0.625 times relative to a width of the grooves. The production method of the micromachine further includes a second processing step for making the polysilicon layer to have a predetermined thickness by adding a upper laid portion of the polysilicon layer on the lower laid portion to form the polysilicon layer, the upper laid portion formed by depositing polysilicon which has the same impurity concentration as the lower laid portion does.

Abstract: A production method of a micromachine includes a polysilicon film forming step which overlays grooves, defined in an upper surface of a sacrificial layer on a silicon substrate, with polysilicon layer so as to be flat. The production method includes a first processing step for filling the grooves by adding a lower laid portion of the polysilicon layer onto a sacrificial layer. The lower laid portion has a thickness greater than 0.625 times relative to a width of the grooves. The production method of the micromachine further includes a second processing step for making the polysilicon layer to have a predetermined thickness by adding a upper laid portion of the polysilicon layer on the lower laid portion to form the polysilicon layer, the upper laid portion formed by depositing polysilicon which has the same impurity concentration as the lower laid portion does.