Patents by Inventor Satoru Ogihara

Satoru Ogihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4736183
    Abstract: A composite sintered oxide resistor comprising crystal grains of zinc oxide and crystal grains of a zinc oxide compound of other metal or semi-metal element than zinc, and a grain boundary layer having an electric resistance equal to or lower than that of the crystal grains and which of zinc oxide between the individual crystal grains has a very large withstanding capacity against switch surge, a small non-linear coefficient of voltage in the voltage-current characteristics, a positive, smaller resistance-temperature coefficient, and a small percent change in resistivity after heat treatment at 500.degree. C. in the atmosphere.
    Type: Grant
    Filed: June 24, 1985
    Date of Patent: April 5, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Takeo Yamazaki, Satoru Ogihara, Tetsuo Kosugi, Shingo Shirakawa, Shinichi Owada
  • Patent number: 4736276
    Abstract: Ceramic insulating substrate layers (1) for a multilayered ceramic wiring circuit board (3) consist essentially of crystals of mullite and sillimanite, non-crystalline silicon dioxide occupying the interstices between the crystals and magnesium oxide dissolved substantially in the crystals in solid solution and have a thermal expansion coefficient of 40-60.times.10.sup.-7 /.degree. C. and a dielectric constant below 6.7.
    Type: Grant
    Filed: May 21, 1986
    Date of Patent: April 5, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Nobuyuki Ushifusa, Satoru Ogihara, Kousei Nagayama, Hiroichi Shinohara, Gyozo Toda
  • Patent number: 4729010
    Abstract: An integrated circuit package in which semiconductor elements mounted on an insulating substrate, ends of lead pieces introduced from the outside and wires that electrically connect them, are accommodated in a cell that is air-tightly defined by the substrate, a cap and a sealing glass. The lead pieces are composed of an alloy having a coefficient of thermal expansion nearly equal to, or smaller than, the coefficient of thermal expansion of the substrate. The alloy is an iron alloy which contains nickel and cobalt, and having a martensite transformation temperture of lower than -55.degree. C.
    Type: Grant
    Filed: July 30, 1986
    Date of Patent: March 1, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Masatoshi Tsuchiya, Satoru Ogihara, Hiromi Kagohara, Kanji Otsuka, Tomoji Oishi
  • Patent number: 4692735
    Abstract: A paste composed of Li.sub.2 CO.sub.3, SiO.sub.2, Sb.sub.2 O.sub.3 and Bi.sub.2 O.sub.3 is coated and baked on a side surface of a sintered ZnO based nonlinear voltage dependent resistor body to form a high resistance side surface for improving a impulse current withstand of the resistor.The amount of the paste constituent is 1.about.2.5 mol % for Li.sub.2 CO.sub.3, 72.+-.5 mol % for SiO.sub.2, 20.+-.3 mol % for Sb.sub.2 O.sub.3 and 8.+-.2 mol % for Bi.sub.2 O.sub.3.
    Type: Grant
    Filed: April 22, 1985
    Date of Patent: September 8, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Moritaka Shoji, Takeo Yamazaki, Satoru Ogihara
  • Patent number: 4672152
    Abstract: A ceramic insulating layer (2) for the multilayer ceramic circuit board (11) consists of 60 wt % of crystallized glass and 40 wt % of a filler such as silicon dioxide bonded by the crystallized glass, which consists of 6-15 wt % of lithium oxide, 70-90 wt % of silicon dioxide, 1-8 wt % of aluminum oxide, 1-5 wt % of alkaline metal oxide other than lithium oxide and 2-5 wt % of alkaline earth metal oxide. The sintered ceramic insulating layer (2) has a dielectric constant below 6.1 and a flexural strength above 150 MPa and is co-firable with a wiring conductor layer of such as gold, silver and copper.
    Type: Grant
    Filed: July 23, 1986
    Date of Patent: June 9, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Hiroichi Shinohara, Nobuyuki Ushifusa, Kousei Nagayama, Satoru Ogihara
  • Patent number: 4624896
    Abstract: The multi-layer ceramic substrate of this invention includes conductor layers and insulating layers disposed between the conductor layers. The insulating layers include the layers of a sintered body principally composed of mullite and the layers of a sintered body principally composed of alumina. This multi-layer ceramic substrate is produced by laminating the green sheets and sintering the laminate. The green sheets principally composed of mullite and the green sheet principally composed of alumina are prepared, and they are laminated and sintered.
    Type: Grant
    Filed: July 5, 1984
    Date of Patent: November 25, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Yutaka Watanabe, Fumiyuki Kobayashi, Satoru Ogihara, Yoshiyuki Ohzawa
  • Patent number: 4620264
    Abstract: A multi-layer ceramic wiring board consisting of alternately laminated ceramic insulating substrates and wiring conductor layers in which the inner-layer ceramic insulating substrates contacting the inside layers of signal wiring conductor are made of a ceramic insulator having a relative dielectric constant of 6.0 or below and a relatively low density and the ceramic insulating substrates of other layers are made of a ceramic insulator having a tensile strength of 4 kgf/mm.sup.2 or above and a relatively high density. In preparation of the board, each of the inner-layer ceramic insulating substrates is preferably formed from a green sheet obtained by drying a thin layer of a slurry containing 70 to 90 parts of ceramic filler particles having a particle size of 5 .mu.
    Type: Grant
    Filed: December 21, 1984
    Date of Patent: October 28, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Nobuyuki Ushifusa, Satoru Ogihara, Kosei Nagayama
  • Patent number: 4598167
    Abstract: A multilayered ceramic circuit board, formed by sintering together a plurality of unit ceramic circuit boards, wherein each unit ceramic circuit board includes a ceramic layer, a patterned electrically conductive layer and through hole conductors formed in the ceramic layer for connecting the patterned electrically conductive layers of the respective unit ceramic circuit boards to form a predetermined wiring circuit. The patterned electrically conductive layers and the through hole conductors have a coefficient of thermal expansion which is greater than the coefficient of thermal expansion of the ceramic layers, wherein the difference between the coefficients of thermal expansion is selected to be less than 100.times.10.sup.-7 /.degree.C., and the through holes have decreased pitch. The conductive layers and conductors can be formed of a metal such as gold, silver or copper, with a low softening point glass filler to reduce the coefficient of thermal expansion of the conductive layers and conductors.
    Type: Grant
    Filed: July 25, 1984
    Date of Patent: July 1, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Nobuyuki Ushifusa, Satoru Ogihara, Takanobu Noro
  • Patent number: 4585706
    Abstract: A semi-conductor device comprising sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound.
    Type: Grant
    Filed: August 26, 1985
    Date of Patent: April 29, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Yukio Takeda, Satoru Ogihara, Mitsuru Ura, Kousuke Nakamura, Tadamichi Asai, Tokio Ohkoshi, Yasuo Matsushita, Kunihiro Maeda
  • Patent number: 4561891
    Abstract: A sintered silicon carbide body having a high thermal conductivity and a high electrical insulation without any drop substantially throughout the sintered body is produced from a powdery silicon carbide composition comprising at least 90% by weight of silicon carbide powders having an average particle size of not more than 10 .mu.m and 0.01 to 4% by weight of powders of beryllium or its compound having a particle size of not more than 30 .mu.m in terms of beryllium atom, a nitrogen content of the composition being not more than 500 ppm.
    Type: Grant
    Filed: October 5, 1983
    Date of Patent: December 31, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Kunihiro Maeda, Katsuhisa Usami, Yukio Takeda, Satoru Ogihara, Osamu Asai
  • Patent number: 4561010
    Abstract: A silicon carbide sintered body comprising silicon carbide as principal constituent, a first component for providing electrical insulating properties to said silicon carbide, said first component comprising at least one of metallic beryllium, beryllium compounds, boron and boron compounds and contained in a total amount of 0.01 to 3.5% by weight calculated as metal, and a second component which can further promote said silicon carbide sinterability provided by said first component and which does not diffuse easily in the particles of said silicon carbide, said second component comprising at least one substance selected from the Group I elements exclusive of hydrogen and francium, Group II elements exclusive of beryllium, radium and mercury, Group III elements exclusive of boron and aluminum, Group IV elements exclusive of carbon, Group V elements, Group VIa elements, Group VIIa elements Group VIII elements exclusive of iron, and compounds thereof, and contained in a total amount of 0.
    Type: Grant
    Filed: December 3, 1982
    Date of Patent: December 24, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Satoru Ogihara, Yukio Takeda, Kunihiro Maeda, Kousuke Nakamura, Mitsuru Ura
  • Patent number: 4540673
    Abstract: Sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound, and a semi-conductor device using the same.
    Type: Grant
    Filed: April 29, 1982
    Date of Patent: September 10, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Yukio Takeda, Satoru Ogihara, Mitsuru Ura, Kousuke Nakamura, Tadamichi Asai, Tokio Ohkoshi, Yasuo Matsushita, Kunihiro Maeda
  • Patent number: 4299873
    Abstract: A multilayer circuit board obtained by laminating and bonding a plurality of ceramic substrates, each substrate having holes therein and a conductive circuit pattern on at least one surface thereof, and bonding layers between each ceramic substrate, said bonding layers containing an organic or inorganic adhesive and an inorganic filler and having good electrical insulating properties, good thermal conductivity and a larger coefficient of thermal expansion than that of the ceramic substrate shows good thermal conductivity, wiring accuracy and productivity.
    Type: Grant
    Filed: April 7, 1980
    Date of Patent: November 10, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Satoru Ogihara, Mitsuru Ura, Yoshihiro Suzuki
  • Patent number: 4252414
    Abstract: In a liquid crystal display element having a twisted structure wherein the periphery of two transparent glass substrates having electrodes according to desired display patterns is sealed with a sealing medium and a liquid crystal is enclosed in the space thus produced, the one characterized by having an undercoating film of metal oxide on the inner surface of each glass substrate, having a transparent electrode on each undercoating film of metal oxide and having an orientation controlling film made from an organic polymer and having abrasion grooves along a certain direction on each electrode can give a liquid crystal display element excellent in heat resistance of the orientation controlling film, excellent in adhesion to the glass substrates, and the like without causing a voltage drop, or without damaging rising of voltage-brightness property and response property.
    Type: Grant
    Filed: January 5, 1979
    Date of Patent: February 24, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Kiyoshige Kinugawa, Tadashi Ishibashi, Yoshimichi Shibuya, Yasuhiko Kando, Masatoshi Ito, Ren Ito, Satoru Ogihara
  • Patent number: 4252841
    Abstract: Transparent conductive films produced by a series of steps comprising a coating step in which a solution obtained by dissolving an indium compound and a tin compound in an organic solvent is coated on a substrate; a preliminary drying step in which the coated substrate is dried at a temperature of 35.degree. to 100.degree. C.; a temperature rise step in which the coated substrate is heated at a temperature rise rate of 20.degree. C./min or more up to 400.degree. C. or higher; and a calcination step in which the coated substrate is calcined at a temperature of 400.degree. C. or higher, or by repeating said series of steps two or more times, have excellent properties such as strong adhesive strength to a substrate, excellent transmittance and remarkably low sheet resistance.
    Type: Grant
    Filed: March 16, 1979
    Date of Patent: February 24, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Kiyoshige Kinugawa, Shizuo Ishitani, Yosio Hanada, Satoru Ogihara, Tadashi Ishibashi
  • Patent number: 4238276
    Abstract: A liquid crystal display element is produced by forming an electrical insulating metal oxide film on a transparent glass substrate, forming a transparent conductive film thereon by coating a coating solution prepared by diluting a solute comprising indium, tin, a .beta.-diketone and nitric acid with an organic solvent, followed by calcination, etching the transparent conductive film to give electrodes having desired patterns, placing the two resulting glass substrates in parallel so that individual electrodes at the inner side stand opposite to each other, and enclosing a liquid crystal material in the space formed between the two glass substrates. The liquid crystal display element thus produced has transparent electrodes which have low sheet resistance, enhanced mechanical strength and strong adhesive strength to the glass substrate.
    Type: Grant
    Filed: March 16, 1979
    Date of Patent: December 9, 1980
    Assignee: Hitachi, Ltd.
    Inventors: Kiyoshige Kinugawa, Satoru Ogihara, Yosio Hanada, Shizuo Ishitani, Tadashi Ishibashi