Abstract: There are provided a light-emitting element, an optical detection module, a method for manufacturing a light-emitting element, and a scanning electron microscope using the same, by which it is possible to reduce crosstalk and expand the range of applications. A light-emitting element includes a fiber optic plate substrate having transparency to fluorescence and a light-emitting layer as a nitride semiconductor layer having a quantum well structure. In the light-emitting element, the fiber optic plate substrate and the light-emitting layer are directly bonded to each other.

Abstract: A light-emitting device according to an embodiment includes a structure for increasing an optical confinement coefficient of a layer forming a resonance mode. The light-emitting device includes a first cladding layer, an active layer, a second cladding layer, a resonance mode formation layer, and a high refractive index layer. The first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain nitride semiconductors. The high refractive index layer has a refractive index higher than that of any of the first cladding layer, the active layer, the second cladding layer, and the resonance mode formation layer, and has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated.

Abstract: The present embodiment relates to a surface emitting type light-emitting element mainly including a nitride semiconductor and a layer for forming a resonance mode. The light-emitting element increases the optical confinement coefficient of a layer forming a resonance mode, includes an active layer, a phase modulation layer, and one or more high refractive index layers, and further includes, first and second cladding layers sandwiching the active layer, the phase modulation layer, and the high refractive index layer. The phase modulation layer includes a base layer and modified refractive index regions. The gravity centers of the modified refractive index regions are arranged on a straight line passing through each lattice point of a virtual square lattice and tilted with respect to the square lattice. The distance between the gravity center of each modified refractive index region and the lattice point is individually set according to the optical image.

Abstract: An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on the second clad layer; a second electrode that is disposed on a second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body; a third electrode that is disposed on the second clad layer on the other side of the first electrode in the light guiding direction; and at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween. The optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode.

Abstract: An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on a second clad layer; a second electrode that is disposed on the second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body; a third electrode that is disposed on the second clad layer on the other side of the first electrode in the light guiding direction; and at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween. The optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode.