Abstract: A substrate processing method includes performing, on a substrate having a resist film formed thereon, a reduction processing of reducing hydrocarbons contained in the resist film. The resist film includes a metal oxide resist, exposed to light, and developed to have a pattern. The method further includes performing a processing of reducing roughness of the resist film after being subjected to the reduction processing.

Abstract: A substrate processing system includes a first processing vessel forming a first processing space and a second processing vessel forming a second processing space, each processing space being for storing a substrate; an atmosphere adjuster for setting an adjustment area into a second atmosphere, the second atmosphere having an oxygen concentration and a humidity lower than those of a first atmosphere at an outside of the adjustment area and having a pressure equal to or close to a pressure of the outside of the adjustment area; a resist film former having the first processing vessel and supplying a resist component-containing gas into the first processing space under the second atmosphere to form a resist film on the substrate; and a heater having the second processing vessel and heating, under the second atmosphere, the substrate before being subjected to exposure of the resist film.

Abstract: A resist film forming method includes forming a resist film on a substrate by supplying a resist component-containing gas into a processing space inside a processing vessel set into a second atmosphere, the second atmosphere being set in an adjustment area including the processing space of the processing vessel storing the substrate, and the second atmosphere having an oxygen concentration and a humidity lower than those of a first atmosphere at an outside of the adjustment area and a pressure substantially equal to a pressure of the outside; and heating, in the processing space set into the second atmosphere, the substrate with the resist film formed thereon before being subjected to exposure.

Abstract: A method for observing a surface includes a) and b). At the a), a material including at least one or more solid luminescent dye molecules is accumulated in a region having an abnormal shape in a substrate or in a structure on the substrate. At the b), the region having the abnormal shape in the substrate or in the structure on the substrate is irradiated with illumination light to acquire the fluorescent image of the solid luminescent dye molecules.

Abstract: A substrate processing method includes forming a metal oxide resist film on a substrate including an underlayer; forming a pattern in the metal oxide resist film; modifying the metal oxide resist film in which the pattern has been formed; and etching the underlayer by using the modified metal oxide resist film as a mask.

Abstract: A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, making a determination of which one of a first treatment and a second treatment to perform based on the treatment object substrate. In response to the determination determining to perform the first treatment, performing the first treatment of decreasing a polarity of the base film to bring it closer to a polarity of the resist solution. In response to the determination determining to perform the second treatment, performing a treatment of increasing the polarity of the base film to bring it closer to the polarity of the resist solution.

Abstract: A heat-treating method of performing a heat treatment on a substrate on which a film of a metal-containing resist film is formed and which is subjected to an exposure treatment, includes an operation of heating the substrate for a predetermined period of time at a heating temperature at which a metal-containing sublimate is not generated from the film of the metal-containing resist, wherein during the operation of heating the substrate, a reactive fluid in which a concentration of at least one of a carbon dioxide or moisture is higher than a concentration in an atmosphere to promote a reaction within the film of the metal-containing resist, is supplied to a processing space around the substrate.

Abstract: A communication system includes gateways and a network server. Each gateway includes a data transmission/reception unit that transmits data to a base station, a connectivity confirmation unit that transmits a result of confirming connectivity with another gateway to the network server, a data transfer unit that transfers data to an unspecified gateway when a communication failure occurs, and a hopping communication unit that processes transfer data based on a hopping rule. The network server includes a data reception unit, a connectivity confirmation result reception unit, and a hopping rule distribution unit that generates and distributes the hopping rule based on a criterion for giving a priority to a transfer from the gateway camping on a different base station.

Abstract: A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.

Abstract: A substrate treatment method for performing a treatment for forming a pattern through precursor formation and a condensation reaction of a metal-containing resist, includes: suppressing the precursor formation of a film of the metal-containing resist formed on a substrate on which exposure and a PEB treatment have been performed; and subsequent thereto, improving selectivity of the film by the condensation reaction in the film before the forming the pattern.

Abstract: A communication system includes gateways and a network server. Each gateway includes a data transmission/reception unit that transmits data to a base station, a connectivity confirmation unit that transmits a result of confirming connectivity with another gateway to the network server, a data transfer unit that transfers data to an unspecified gateway when a communication failure occurs, and a hopping communication unit that processes transfer data based on a hopping rule. The network server includes a data reception unit, a connectivity confirmation result reception unit, and a hopping rule distribution unit that generates and distributes the hopping rule based on a criterion for giving a priority to a transfer from the gateway camping on a different base station.

Abstract: A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, performing a treatment of decreasing a polarity of the base film when the polarity of the base film is higher than a polarity of the resist solution, and performing a treatment of increasing the polarity of the base film when the polarity of the base film is lower than the polarity of the resist solution.

Abstract: A method for cleaning a substrate includes setting a substrate inside a cleaning chamber, supplying on a surface of the substrate a treatment solution which includes a volatile component and forms a treatment film, vaporizing the volatile component of the treatment solution supplied on the surface of the substrate such that the treatment solution solidifies or is cured on the surface of the substrate and the treatment film is formed on the surface of the substrate, and supplying onto the treatment film formed on the surface of the substrate a removal solution which removes the treatment film.

Abstract: A film forming system is to form an organic film on a substrate having a pattern formed on a surface thereof, includes: an organic film formation section configured to perform an organic film formation treatment on the substrate to form the organic film on the substrate; a film thickness measurement section configured to measure a film thickness of the organic film on the substrate; and an ultraviolet treatment section configured to perform an ultraviolet irradiation treatment on the organic film on the substrate to remove a surface of the organic film. In the film forming system, the organic film formation section, the film thickness measurement section, and the ultraviolet treatment section are disposed side by side in this order along a transfer direction of the substrate.

Abstract: A film forming system is to form an organic film on a substrate having a pattern formed on a surface thereof, includes: an organic film formation section configured to perform an organic film formation treatment on the substrate to form the organic film on the substrate; a film thickness measurement section configured to measure a film thickness of the organic film on the substrate; and an ultraviolet treatment section configured to perform an ultraviolet irradiation treatment on the organic film on the substrate to remove a surface of the organic film. In the film forming system, the organic film formation section, the film thickness measurement section, and the ultraviolet treatment section are disposed side by side in this order along a transfer direction of the substrate.

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract: The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.