Abstract: An aluminum-alloy plate (10) equipped with an aluminum-alloy substrate (1) and an aluminum-oxide film (2) formed on the surface of the aluminum-alloy substrate (1), wherein: the aluminum-oxide film (2) contains at least one type of additional element having a P-B ratio of 1.00 or more, zirconium in the amount of 0.01-10 atomic percent, and magnesium in the amount of 0.1 or more and less than 10 atomic percent; and the total amount of additional elements contained in the aluminum-oxide film (2) is 0.010-5.0 atomic percent. As a result, it is possible to provide: an aluminum-alloy plate which exhibits excellent post-degreasing-water-wettability stability even when in a high-temperature, high-humidity environment; and a joined body and a vehicle member which use the same.

Abstract: Provided is an anodized aluminum film formed on a surface of a substrate that comprises aluminum or an aluminum alloy, the anodized aluminum film having a structure constituted of a single anodized film layer or a structure composed of superposed anodized film layers of two or more different kinds, wherein the outermost anodized film has a degree of film formation, defined by equation (1), of 1.3 or more and the proportion of the thickness of this anodized film in the entire film thickness is 3% or higher. Thus, the anodized aluminum film is inhibited from cracking in bent portions. As a result, the substrate is inhibited from corroding in corrosive-gas atmospheres, and a decrease in withstand voltage characteristics due to film cracking is inhibited. With this anodized aluminum film, enhanced withstand voltage characteristics can hence be attained.

Abstract: A fuel cell separator (10) which comprises a base (1) constituted of titanium or a titanium alloy and a conductive carbon layer (2) that was formed by press-bonding a carbon powder to the base (1) and that covers the surface thereof; an interlayer (3) having been formed between the base (1) and the carbon layer (2). The interlayer (3) has been formed by a heat treatment in an atmosphere containing a slight amount of oxygen, contains titanium carbide yielded by the reaction of the Ti of the base (1) with the C of the carbon layer (2), and has an oxygen content of 0.1-40 at %.

Abstract: An aluminum alloy comprising more than 3.5% and up to 6.0% of Mg, 0.02 to 1.0% inclusive of Cu, 0.02 to 0.1% inclusive of Cr, and a remainder made up by Al and unavoidable impurities, wherein the contents of Si and Fe in the unavoidable impurities are limited to 0.05% or less and 0.05% or less, respectively, and wherein the number of intermetallic compound particles contained in the aluminum alloy and having a maximum length of 4 ?m or more is 50 particles or less per 1 mm2 of an arbitrary cross-sectional area of the aluminum alloy. An aluminum alloy is provided, which has excellent anodic-oxidation-treatability and can be used for providing an anodic-oxidation-treated aluminum alloy member having high withstand voltage properties and such excellent heat resistance that the occurrence of cracking under high temperatures conditions can be prevented.

Abstract: An electrode material for a secondary battery, which realizes a lowered contact resistance between the electrode material and an active material layer, is provided. A collector (electrode material) includes: a substrate 1a including a metal foil; and a conductive material 1b, wherein the conductive material 1b contains a carbon black having a BET specific surface area of 300 m2/g or less and an attached amount of the carbon black per unit area on the surface of the substrate 1a is 400 mg/m2 or less.

Abstract: An electrode material which has excellent tab weldability, realizes reduction of a contact resistance with an active material layer, and has good adhesion with a conductive material disposed in an island shape, is provided. An electrode material 1 includes a substrate 1a including a metal foil and a conductive material 1b containing carbon, wherein the conductive material 1b is disposed in an island shape on the surface of the substrate 1a when observed with a visual field of 300 ?m square, and the conductive material is fixed to the surface of the substrate together with a hydrophobic resin and a water-soluble resin.

Abstract: Provided is an electrode material with excellent tab weldability and realizing decreased contact resistance with an active material layer. A collector (electrode material) (1) is provided with a metal foil substrate (1a) and a carbon-containing conductive substance (1b), and is configured such that, when observed from a square viewfield with a surface area of 0.1 mm2, the conductive substance (1b) is arranged in islands on the surface of the substrate (1a) with a 1-80% coverage ratio of the conductive substance (1b) on the surface of the substrate (1a).

Abstract: Provided is a fuel cell separator that can maintain a low contact resistance for a long period of time while being used for a fuel cell, by using a carbon film that can be formed with high productivity. The fuel cell separator 10 is provided with: a substrate 1 comprising titanium or titanium alloy; and a conductive carbon layer 2 that is formed by compression bonding carbon powder onto the substrate 1, and covers the surface thereof. Between the substrate 1 and the carbon layer 2, particle-like titanium carbide 31 and carbon dissolved titanium 32 generated by reacting the titanium of the substrate 1 and carbon of the carbon layer 2 with each other through heat treatment are connected, forming an intermediate layer 3.

Abstract: A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

Abstract: The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

Abstract: The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

Abstract: A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

Abstract: A method of specifying a Cu-contamination-causative step or steps in a Si wafer reclamation process including plural steps in combination, comprising: using p-type Si wafers, or p-type Si wafers and n-type Si wafers as monitor wafers, and performing a measuring operation for measuring the electrical resistance of the monitor wafers at least once before and after a single step or a series of successive steps during the Si wafer reclamation process. The present invention is capable of nondestructively, simply, and accurately detecting Cu that can contaminate Si wafers during a Si wafer reclamation process and is capable of specifying a Cu-contamination-causative process.

Abstract: A method of specifying a Cu-contamination-causative step or steps in a Si wafer reclamation process including plural steps in combination, comprising: using p-type Si wafers, or p-type Si wafers and n-type Si wafers as monitor wafers, and performing a measuring operation for measuring the electrical resistance of the monitor wafers at least once before and after a single step or a series of successive steps during the Si wafer reclamation process. The present invention is capable of nondestructively, simply, accurately detecting Cu that can contaminate Si wafers during a Si wafer reclamation process and of specifying a Cu-contamination-causative process.

Abstract: A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.

Abstract: A process capable of reclaiming used semiconductor wafers with a reduced metallic contamination level on wafer surfaces. The process comprises the steps of removing one or more surface layers of the substrate by chemical etching; scraping off one surface of the substrate in small amount by mechanical machining; removing a damage layer, which has occurred due to the mechanical machining, by chemical etching; and polishing the other surface of the substrate into a mirror finish.

Abstract: A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP at ambient temperature. The preferred pad comprises an organic polymer having a hardness greater than about 40 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide.

Abstract: A carbon substrate manufacturing method includes a hot molding step, a burn-carbonizing step, a hot isostatical pressure treatment step, and a mirror polishing step. In the hot molding step, molding is performed while heating thermosetting resin powders to be a hard carbon substrate after burn-carbonizing, where the thermosetting resin powders are of a particle size 150 .mu.m or more, HPF 80-150 mm, a moisture content 1.0-3.0 weight %, Fe, Ni, Si and Ca respectively 5 ppm or less. In the burn-carbonizing process, a disk shaped resin molded body is filled into a graphite cylinder and burn-carbonized by heating from the external while the condition therefor is maintained in that the disk shaped resin molded body is stacked holding therein a graphite spacer at every one sheet basis or at every plurality of sheet basis and is loaded on its top with a tungsten carbide weight, where the graphite spacer has a heat conductivity 100 kcal/m.hr..degree. C. or less, a bulk density 1.70-1.85, and a flatness degree 10 .mu.

Abstract: The surface of a blank for a textured amorphous carbon substrate is polished in a surface with a predetermined surface roughness, and then the blank with a polished surface is heated at a predetermined temperature in an oxidizing atmosphere to form minute irregularities in the polished surface through a reaction expressed by C+O.sub.2 =CO.sub.2 so that the surface is textured in an appropriate surface roughness. A randomly textured amorphous carbon substrate has a randomly textured surface with a surface roughness Ra in the range of 20 to 100 .ANG. and the ratio Ra.sub.2 /Ra.sub.1, where Ra.sub.1 is the surface roughness with respect to a circumferential direction, and Ra.sub.2 is the surface roughness with respect to a radial direction, in the range of 0.75 to 1.25 .ANG.. A concentrically textured amorphous carbon substrate has a concentrically textured surface with a surface roughness Ra in the range of 30 to 100 .ANG. or in the range of 40 to 200 .ANG., and the ratio Ra.sub.2 /Ra.sub.1 of 1.75 or greater.

Abstract: A cosmetic liquid applicator having a tubular shaft, a rotary knob at a rear end of the shaft and a piston axially slidable in the shaft upon rotation of the rotary knob. A nib, mounting to a forward end of the tubular shaft, has a passage communicating with a liquid chamber. A plurality of radially extending pojections are provided so that they are gradually reduced in diameter in the forward direction. A discharge hole is communicated with the passage, and a slot extends forwardly and rearwardly from the discharge hole in opposite directions of and transverse to the projections.