Abstract: The present invention provides an improved magnetic head suspension including a flexure with a flexure wiring structure therein, a load beam constituting a suspension in cooperation with the flexure, and a relay FPC with a flexure wiring structure therein for connection between the flexure and an external wiring structure. A flexure signal line portion has a characteristic impedance matching with that of an FPC signal line portion. A connection portion of the flexure wiring structure has a width substantially equal to that of the FPC signal line portion, and has a length determined by multiplying a positional error in joining between the flexure and the FPC by two and adding the result to the width of the connection portion of the FPC wiring structure.

Abstract: A support structure for a magnetic head slider for reading/writing includes: (a) a wiring flexure including: (i) a plate substrate having a distal end and a proximal end and having an opening at the proximal end; (ii) an insulating layer formed on the plate substrate and having at least one through-hole at its proximal end; (iii) a conductor layer formed on the insulating layer; and (iv) a protection layer formed on the conductor layer and having at least one through-hole at its distal end; (b) a load beam having two sides through which an aperture is formed; and (c) an arm having a distal end where the load beam is supported. The wiring flexure passes through the aperture of the load beam and is fixed at a position between its distal end and its proximal end.

Abstract: The invention provides a magnetic head suspension of an integrated wiring arrangement type which has an increased mechanical property and which may be produced at high yield efficiency. The invention eliminates bowing or warping from stainless steel plate subsequently constituting load beam or flexure, by obviating the step of unwinding or winding stainless steel plate. In a magnetic head suspension according to the invention, a flexure 2, having a thickness less than that of a load beam 1 and a rigidity less than that of the load beam 1, is bonded to one surface of the load beam 1, having a predetermined rigidity, through a bonding layer 14 of a flexible resin. An insulation layer 71 of a flexible resin is formed on the surface of the flexure 2 opposite to the surface facing to the load beam 1. The insulation layer 71 extends from the proximal end portion of the flexure 2 to the distal end portion of the flexure 2. A wiring arrangement 4 is formed on the insulation layer 71.

Abstract: A method for making a three dimensional structure of the aperture in a photoresist layer on a semiconductor substrate by differentiating dose of exposure light between parts of a photoresist layer. One example of the three dimensional structure is an overhang-platform structure; that is, one side wall of a narrow aperture has an overhang and the opposite side wall has a platform. By separately forming one photoresist layer segment having the overhang wall and the other photoresist layer segment having the platform wall, the distance between the edges of the overhang and the platform can be made smaller than the resolution limit of the photoresist material, which enables making a path line on a substrate whose width is smaller than the resolution limit. Many types of photoresist layers and photomasks for producing such photoresist layers are disclosed.

Abstract: A T-shaped gate of an FET is formed by utilizing the image reverse photolithography process, which includes coating of a semiconductor substrate with a positive resist, initial exposure of an resist outside region, reversal baking, flood exposure of the entire resist layer, and development of the resist layer. The image reverse photolithography process is performed after a dummy gate is formed on the semiconductor substrate. By properly adjusting a light quantity of the flood exposure, a resist pattern can be obtained which has a center hole whose boundary surface is inclined inwardly, and whose bottom surface defines a bottom resist layer thinner than the dummy gate. After removing the dummy gate, a gate material is deposited and then the resist pattern is removed to leave the T-shaped gate.