Abstract: A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween. The active layer is formed of a dispersion film containing predetermined carbon nanotubes and a predetermined polyether compound.

Abstract: An organic EL device including at least an anode, a cathode and an organic light-emitting zone with high brightness is provided. A mixture containing at least two compounds is used for a light-emitting zone and the spectrum of the luminescence from light-emitting zone includes at least one peak at a wavelength which is different from neither of fluorescent peak positions of the compounds included in light-emitting zone.

Abstract: A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.

Abstract: Disclosed is a switching element provided with a gate dielectric film and an active layer disposed in contact with the gate dielectric film. The active layer includes carbon nanotubes, and the gate dielectric film includes non-conjugated polymer containing an aromatic ring in a side chain.

Abstract: In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate insulating film is insufficient. For this reason, a problem of such a switching element is that the amount of CNT fixed in the channel region is insufficient, resulting in insufficient uniformity. In the switching element of the exemplary embodiment, a gate insulating film is formed of a nonconjugated polymer material containing, in the main chain, an aromatic group and a substituted or unsubstituted alkylene or alkyleneoxy group having 2 or more carbon atoms as repeating units. As a result, the interaction between the CNT and the surface of the gate insulating film is enhanced while maintaining the flexibility of the gate insulating film, and the amount of CNT fixed in the channel region can be increased.

Abstract: A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.

Abstract: A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween. The active layer is formed of a dispersion film containing predetermined carbon nanotubes and a predetermined polyether compound.

Abstract: An end portion (104a) of a first source electrode (104) and an end portion (105a) of a first drain electrode (105) face each other on a gate insulating film (103) via a channel formation region. The first source electrode (104) and first drain electrode (105) extend over steps, and the end portion (104a) and end portion (105a) face each other on the gate insulating film (103). The highest portions of the end portion (104a) and end portion (105a) are formed higher than the upper surface of the gate insulating film (103) serving as the channel formation region. A field-effect transistor of this invention also includes a second source electrode (107) which is formed in contact with the channel layer (106) and connects the first source electrode (104) and channel layer (106), and a second drain electrode (108) which is formed in contact with the channel layer (106) and connects, the first drain electrode (105) and channel layer (106).

Abstract: When an electronic element using a carbon nanotube (CNT) is fabricated, particularly when a carbon nanotube thin film is formed on a previously formed electrode, a CNT film is manufactured on the previously formed electrode, and the CNT film on the electrode is used as an electronic element, as it is. In this case, a problem is that unless the carbon nanotubes and the electrode are in sufficient contact with each other, the contact resistance increases, and sufficient element properties are not obtained. When a carbon nanotube thin film is formed on a previously formed electrode, a conductive organic polymer thin film is formed, before or after the carbon nanotube thin film is manufactured, to decrease the contact resistance.

Abstract: In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate insulating film is insufficient. For this reason, a problem of such a switching element is that the amount of CNT fixed in the channel region is insufficient, resulting in insufficient uniformity. In the switching element of the exemplary embodiment, a gate insulating film is formed of a nonconjugated polymer material containing, in the main chain, an aromatic group and a substituted or unsubstituted alkylene or alkyleneoxy group having 2 or more carbon atoms as repeating units. As a result, the interaction between the CNT and the surface of the gate insulating film is enhanced while maintaining the flexibility of the gate insulating film, and the amount of CNT fixed in the channel region can be increased.

Abstract: A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.

Abstract: Disclosed is a method of manufacturing a substrate for an organic EL device, the method comprising the step of: filling grooves of the optical element with sol-gel coating solution or organic metal cracking solution when a diffraction grating 12 is formed on the glass substrate 11, wherein an encapsulation member 5 is mounted to the glass substrate 11 in order to fill the groove 12a with the coating solution, and the coating solution is injected into a gap between the encapsulation member 5 and the diffraction grating 12, so that the organic EL device can be stably manufactured with low variation between optical properties according to positions of the substrate and with improved luminous efficiency.

Abstract: Disclosed is a switching element provided with a gate dielectric film and an active layer disposed in contact with the gate dielectric film. The active layer includes carbon nanotubes, and the gate dielectric film includes non-conjugated polymer containing an aromatic ring in a side chain.

Abstract: Disclosed is a method of manufacturing a substrate for an organic EL device, the method comprising the step of: filling grooves of the optical element with sol-gel coating solution or organic metal cracking solution when a diffraction grating 12 is formed on the glass substrate 11, wherein an encapsulation member 5 is mounted to the glass substrate 11 in order to fill the groove 12a with the coating solution, and the coating solution is injected into a gap between the encapsulation member 5 and the diffraction grating 12, so that the organic EL device can be stably manufactured with low variation between optical properties according to positions of the substrate and with improved luminous efficiency.

Abstract: A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.

Abstract: Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrate 10 is layered with a first layer 30 having a refractive index higher than that of the light transparent substrate 10 and a second layer 40 having a refractive index lower than that of the first layer. The refractive index of the first layer 30 is set to be 1.35 times as high as that of the second layer 40. With this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.

Abstract: The present invention relates to an organic electroluminescent device. There is provided an organic electroluminescent device with a good luminescence property and high luminous efficiency in which the organic electroluminescent device has a diffraction grating 2 on the surface of the substrate 1 and an organic EL layer 5 including an emission layer between an anode 4 an a cathode 6 via an intermediate layer 3.

Abstract: Provided is a light emitting diode and method for fabricating the same, and a display device using the same, wherein the light emitting diode at least comprises a high refractive index layer on a light transmissive substrate; and an organic electroluminescence (EL) element formed of one organic thin layer or a plurality of organic thin layers interposed between a transparent first electrode and a second electrode formed on the high refractive index layer, and the high refractive index layer has a refractive index higher than that of an emitting layer or has a refractive index of 1.65 or more, and an interface between the high refractive index layer and the light transmissive substrate is roughed to have its center line average roughness in a range of 0.01 ?m to 0.6 ?m so that light leakage is be prevented and light extraction efficiency becomes higher.

Abstract: Described is a SIT type organic thin film transistor in which gate electrodes are formed as a conductive layer where a plurality of wire-shaped conductive materials are arranged in such a manner that a distance to the nearest wire is 100 nm or less at any point in the space between the wires or a semiconductor portion (B) between the gate electrodes has a rectangular cross section formed by a length of shorter sides in the range of 20 nm to 200 nm and a length of longer side 2 ?m or more. This provides an organic thin film transistor which can be fabricated easily at a low temperature, at a low cost, and with high-speed drive ability, a high ON/OFF ratio, and a high controllability.

Abstract: A communication system includes: at least one light-emitting device for emitting a light; and at least one light-receiving device for receiving the light emitted from the at least one light-emitting device. The light-emitting device further includes: at least one driver unit for generating a modified current based on an externally entered information signal; and at least one light-emitting unit operatively and functionally coupled to the at least one driver unit for receiving the modified current and emitting a modified signal light including any information based on the modified current. The at least one light-emitting unit includes at least one electroluminescence element.