Abstract: Provided are a thin film transistor, a display device, and a thin film transistor manufacturing method, in which variation in characteristics is small. The present invention is provided with: a gate electrode formed on a substrate; a gate insulation film formed so as to cover the gate electrode; a semiconductor layer which is formed on the upper side of the gate insulation film and which includes a polysilicon layer disposed, in a plan view, inside a region defined by the gate electrode; an etching stopper layer disposed on the upper side of the polysilicon layer; and a source electrode and a drain electrode provided on the semiconductor layer so as to be separated from each other, wherein the polysilicon layer has first and second regions which are not covered with the etching stopper layer, and a part of the source electrode exists above the first region and a part of the drain electrode exists above the second region.

Abstract: Provided are a thin film transistor, a display device, and a thin film transistor manufacturing method, in which variation in characteristics is small. The present invention is provided with: a gate electrode formed on a substrate; a gate insulation film formed so as to cover the gate electrode; a semiconductor layer which is formed on the upper side of the gate insulation film and which includes a polysilicon layer disposed, in a plan view, inside a region defined by the gate electrode; an etching stopper layer disposed on the upper side of the polysilicon layer; and a source electrode and a drain electrode provided on the semiconductor layer so as to be separated from each other, wherein the polysilicon layer has first and second regions which are not covered with the etching stopper layer, and a part of the source electrode exists above the first region and a part of the drain electrode exists above the second region.

Abstract: Provided are a thin film transistor, a display device, and a thin film transistor manufacturing method, in which variation in characteristics is small. The present invention is provided with: a gate electrode formed on a substrate; a gate insulation film formed so as to cover the gate electrode; a semiconductor layer which is formed on the upper side of the gate insulation film and which includes a polysilicon layer disposed, in a plan view, inside a region defined by the gate electrode; an etching stopper layer disposed on the upper side of the polysilicon layer; and a source electrode and a drain electrode provided on the semiconductor layer so as to be separated from each other, wherein the polysilicon layer has first and second regions which are not covered with the etching stopper layer, and a part of the source electrode exists above the first region and a part of the drain electrode exists above the second region.

Abstract: Provided are a thin film transistor having properties properly adjusted by adjusting crystallinity of a polycrystalline silicon, and a method of manufacturing the same. The silicon layer functioning as a channel layer of a TFT comprises an amorphous part, a first polycrystalline part and a second polycrystalline part. The first and second polycrystalline parts are formed by irradiating the silicon layer with laser beams (energy beams) through the mask comprising the shielding part for shielding the energy beams, the first transmission part for transmitting the energy beams and the second transmission part for transmitting the energy beams at a transmittance lower than that of the first transmission part. By the presence of the second polycrystalline part, properties of the TFT such as an electron mobility are properly adjusted. Further, properties of the TFT can be adjusted easily by adjusting the configuration of the mask.

Abstract: A method of manufacturing a thin film transistor including: forming a gate electrode on a substrate, forming an insulating film, forming a first silicon layer including an amorphous silicon, irradiating a region of the first silicon layer from a part or the whole of a predetermined region of the first silicon layer to an outside of the predetermined region with an energy beam so as to convert a portion of the first silicon layer into a polycrystalline silicon, a first etching step for etching the first silicon layer while leaving the predetermined region, forming a second silicon layer including an amorphous silicon so as to cover the predetermined region, a second etching step for etching the second silicon layer covering the predetermined region while leaving a part of the second silicon layer, the part larger than the predetermined region, and forming a source electrode and a drain electrode.

Abstract: Provided is a manufacturing method for an active matrix substrate, capable of providing a hole for alignment at an interlayer dielectric film without possible etching of a substrate surface and abnormal electric discharge and of allowing the position of a formed film to be easily corrected to be aligned with the position of the film of the lowest layer, with high overlaying precision. Also provided are the active matrix substrate and a display apparatus comprising the active matrix substrate. An interlayer dielectric film 14 of the active matrix substrate is formed using an SOG material with photosensitivity, and an adjustment hole 14b for adjustment of the patterns of a gate insulation film 15, a first semiconductor film 16, a second semiconductor film 17 and a source metal that are formed on the upper side of a substrate 10 and the interlayer dielectric film 14 is formed. The position of each film is adjusted while viewing an edge of the gate wiring 11 through the adjustment hole 14b.

Abstract: Provided are a thin film transistor having properties properly adjusted by adjusting crystallinity of a polycrystalline silicon, and a method of manufacturing the same. The silicon layer functioning as a channel layer of a TFT comprises an amorphous part, a first polycrystalline part and a second polycrystalline part. The first and second polycrystalline parts are formed by irradiating the silicon layer with laser beams (energy beams) through the mask comprising the shielding part for shielding the energy beams, the first transmission part for transmitting the energy beams and the second transmission part for transmitting the energy beams at a transmittance lower than that of the first transmission part. By the presence of the second polycrystalline part, properties of the TFT such as an electron mobility are properly adjusted. Further, properties of the TFT can be adjusted easily by adjusting the configuration of the mask.

Abstract: A liquid crystal layer is disposed on a second glass substrate side between a first glass substrate and a second glass substrate, a first insulating film and a second insulating film are formed in this order on a surface of the first glass substrate that is disposed on the liquid crystal layer side, the outer edge portion of the liquid crystal layer is surrounded by a sealing material, and a slit is formed in a part or the whole of the peripheral edge portion of the second insulating film disposed on a further inner side than a position at which the second insulating film overlaps the sealing material. In addition, a slit formed in a peripheral edge portion of the first insulating film that corresponds to the sealing material is filled with a gate insulating film having a higher barrier property for gas and/or liquid than the first insulating film.

Abstract: A method of manufacturing a thin film transistor including: forming a gate electrode on a substrate, forming an insulating film, forming a first silicon layer including an amorphous silicon, irradiating a region of the first silicon layer from a part or the whole of a predetermined region of the first silicon layer to an outside of the predetermined region with an energy beam so as to convert a portion of the first silicon layer into a polycrystalline silicon, a first etching step for etching the first silicon layer while leaving the predetermined region, forming a second silicon layer including an amorphous silicon so as to cover the predetermined region, a second etching step for etching the second silicon layer covering the predetermined region while leaving a part of the second silicon layer, the part larger than the predetermined region, and forming a source electrode and a drain electrode.

Abstract: Provided is a manufacturing method for an active matrix substrate, capable of providing a hole for alignment at an interlayer dielectric film without possible etching of a substrate surface and abnormal electric discharge and of allowing the position of a formed film to be easily corrected to be aligned with the position of the film of the lowest layer, with high overlaying precision. Also provided are the active matrix substrate and a display apparatus comprising the active matrix substrate. An interlayer dielectric film 14 of the active matrix substrate is formed using an SOG material with photosensitivity, and an adjustment hole 14b for adjustment of the patterns of a gate insulation film 15, a first semiconductor film 16, a second semiconductor film 17 and a source metal that are formed on the upper side of a substrate 10 and the interlayer dielectric film 14 is formed. The position of each film is adjusted while viewing an edge of the gate wiring 11 through the adjustment hole 14b.

Abstract: A liquid crystal layer is disposed on a second glass substrate side between a first glass substrate and a second glass substrate, a first insulating film and a second insulating film are formed in this order on a surface of the first glass substrate that is disposed on the liquid crystal layer side, the outer edge portion of the liquid crystal layer is surrounded by a sealing material, and a slit is formed in a part or the whole of the peripheral edge portion of the second insulating film disposed on a further inner side than a position at which the second insulating film overlaps the sealing material. In addition, a slit formed in a peripheral edge portion of the first insulating film that corresponds to the sealing material is filled with a gate insulating film having a higher barrier property for gas and/or liquid than the first insulating film.