Abstract: A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes: a unipolar component at least including an epitaxial layer; a transition layer connected to the epitaxial layer; and a bypass component connected to the transition layer; the unipolar component and the bypass component are connected in parallel and the transition layer is configured between the unipolar component and the bypass component.

Abstract: A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes: a unipolar component at least including a first epitaxial layer and a first substrate; and a bypass component at least including a second epitaxial layer and a second substrate; the unipolar component and the bypass component are connected in parallel; a difference of a thickness of the unipolar component and a thickness of the bypass component is lower than or equal to a predetermined value.

Abstract: A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes: a unipolar component at least including an epitaxial layer; a transition layer connected to the epitaxial layer; and a bypass component connected to the transition layer; the unipolar component and the bypass component are connected in parallel and the transition layer is configured between the unipolar component and the bypass component.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide substrate and a protective film covering at least partly a main surface of the silicon carbide substrate and one or more side surfaces of the silicon carbide substrate. Therefore, contact of the side surface of the silicon carbide substrate with the moisture gathering material may be avoided, and the breakdown behavior and the long-term reliability of the semiconductor device may be further improved.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide substrate and a protective film covering at least partly a main surface of the silicon carbide substrate and one or more side surfaces of the silicon carbide substrate. Therefore, contact of the side surface of the silicon carbide substrate with the moisture gathering material may be avoided, and the breakdown behavior and the long-term reliability of the semiconductor device may be further improved.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide drift layer, a buried silicon carbide layer and an oxide semiconductor layer; the buried silicon carbide layer is located within the silicon carbide drift layer and the buried silicon carbide layer is covered by the oxide semiconductor layer. Therefore, breakdown behavior and/or long-time reliability of the semiconductor device may be further improved.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide drift layer, a buried silicon carbide layer and an oxide semiconductor layer; the buried silicon carbide layer is located within the silicon carbide drift layer and the buried silicon carbide layer is covered by the oxide semiconductor layer. Therefore, breakdown behavior and/or long-time reliability of the semiconductor device may be further improved.

Abstract: A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

Abstract: A semiconductor device includes: a semiconductor substrate including: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed in a surface of the body region; a trench, which reaches the drift region; an electric-field relaxation layer, which is formed on at least a portion of a bottom surface out of inner walls of the trench and is electrically connected to the impurity region; a control electrode, which is formed in the trench; an insulating film, which is formed between the control electrode and both the inner walls of the trench and the electric-field relaxation layer; and an electrode, which is connected to the impurity region.

Abstract: A semiconductor device having a main electrode connected to a first semiconductor region and a second semiconductor layer on a semiconductor substrate so that a pn-junction diode is formed with the first semiconductor region being interposed and a Schottky barrier diode is formed with the second semiconductor layer being interposed on a surface of the semiconductor substrate, the semiconductor device includes a first electrode configured to ohmic-contact the first semiconductor region; a second electrode configured to Schottky-contact the second semiconductor layer and not having a portion directly contacting the first electrode; and a conductive reaction suppression layer to suppress a reaction between a material configuring the first electrode and a material configuring the second electrode are provided on the surface of the semiconductor substrate, and the main electrode is electrically connected to the first electrode and the second electrode.

Abstract: A semiconductor device having a main electrode connected to a first semiconductor region and a second semiconductor layer on a semiconductor substrate so that a pn-junction diode is formed with the first semiconductor region being interposed and a Schottky barrier diode is formed with the second semiconductor layer being interposed on a surface of the semiconductor substrate, the semiconductor device includes a first electrode configured to ohmic-contact the first semiconductor region; a second electrode configured to Schottky-contact the second semiconductor layer and not having a portion directly contacting the first electrode; and a conductive reaction suppression layer to suppress a reaction between a material configuring the first electrode and a material configuring the second electrode are provided on the surface of the semiconductor substrate, and the main electrode is electrically connected to the first electrode and the second electrode.

Abstract: A capacitive load driver includes a first switching element whose first end receives positive potential, an EL element arranged between a second end of the first switching element and the ground, a charge collecting capacitor whose first end is connected to a positive electrode terminal of the EL element, a voltage source connected between a second end of the charge collecting capacitor and the ground, and a controller. The controller charges a parasitic capacitance of the EL element and the charge collecting capacitor, and thereafter, applies negative potential from the voltage source to the second end of the charge collecting capacitor. Thereafter, the controller brings the output voltage of the voltage source to ground potential so that the charge collecting capacitor is discharged to charge the EL element. The capacitance of the charge collecting capacitor is set to be sufficiently greater than that of the parasitic capacitance.

Abstract: An organic electroluminescence illumination device including: an organic electroluminescence panel including: a transparent substrate; a transparent electrode formed on the transparent substrate; an organic light emitting layer formed on the transparent electrode; and a metal electrode formed on the organic light emitting layer, wherein the organic light emitting layer comprises: an illumination area that is formed as a main light emitting area of the organic electroluminescence illumination device; a reference area, which is electrically-insulated from the illumination area; and a light receiving area, which is electrically-insulated from the illumination area and the reference area; and an organic light emitting layer driving part that drives individually the illumination area and the reference area, wherein the organic light emitting layer driving part detects current flowing in the light receiving area.

Abstract: A capacitive load driver includes a first switching element whose first end receives positive potential, an EL element arranged between a second end of the first switching element and the ground, a charge collecting capacitor whose first end is connected to a positive electrode terminal of the EL element, a voltage source connected between a second end of the charge collecting capacitor and the ground, and a controller. The controller charges a parasitic capacitance of the EL element and the charge collecting capacitor, and thereafter, applies negative potential from the voltage source to the second end of the charge collecting capacitor. Thereafter, the controller brings the output voltage of the voltage source to ground potential so that the charge collecting capacitor is discharged to charge the EL element. The capacitance of the charge collecting capacitor is set to be sufficiently greater than that of the parasitic capacitance.

Abstract: A capacitive light emitting device includes: a capacitive light emitting device 1 placed between a cathode electrode and an anode electrode opposite to each other on a light-transmitting substrate; a power supply Vin connected to the capacitive light emitting device; drive means 10 for driving the capacitive light emitting device by applying a DC voltage of the power supply between the cathode electrode and the anode electrode; and regeneration means L2, Q3 for returning electric charges to the power supply for regeneration, the electric charges being accumulated in a parasitic capacitance of the capacitive light emitting device while the capacitive light emitting device is driven.