Abstract: A composition for surface treatment according to the present invention is used for treating the surface of an object to be polished after polishing, the composition for surface treatment including: a water-soluble polymer having a constituent unit derived from glycerin; an acid; and water, wherein the composition for surface treatment has a pH of 5 or lower.

Abstract: A surface treatment composition according to the present invention is a surface treatment composition having a pH of lower than 7 and used for treating the surface of a polished object to be polished having a layer containing tungsten, and the surface treatment composition contains a tungsten etching inhibitor and water, wherein the tungsten etching inhibitor is a compound containing a monocyclic or fused polycyclic aromatic hydrocarbon ring having two or more substituents, and the substituents contain at least a nitrogen-containing group and an anionic group.

Abstract: The present invention provides a means allowing achievement of sufficient planarization of the surface of an object to be polished containing two or more types of materials. The present invention is a polishing method for polishing an object to be polished containing two or more types of materials by using a polishing composition, the polishing method including equalization of the surface zeta potential of the object to be polished.

Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains abrasive grains, an oxidizing agent, and a water-soluble polymer. When the polishing composition is left to stand for one day in an environment with a temperature of 25° C., the water-soluble polymer may be adsorbed on the abrasive grains at 5,000 or more molecules per 1 ?m2 of the surface area of the abrasive grains. Alternatively, the water-soluble polymer may be a compound that reduces the water contact angle of the portion containing a group III-V compound material of the object after being polished with the polishing composition.

Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.

Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises odd-shaped abrasive grains and an oxidizing agent having a standard electrode of 0.3 V or more, and preferably further contains a salt, such as an ammonium salt. The pH of the polishing composition is 1 or more and 6 or less, or 8 or more and 14 or less. The average degree of association of the abrasive grains, obtained by dividing the value of the average secondary particle diameter of the abrasive grains by the value of the average primary particle diameter of the abrasive grains, is preferably 1.6 or more.

Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains an oxidizing agent and an anticorrosive agent. The anticorrosive agent is preferably a nitrogen-containing organic compound, such as 1H-1,2,4-triazole and benzotriazole, or an organic compound having a carboxyl group, for example, dicarboxylic acid, such as malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, and tartaric acid, or tricarboxylic acid, such as citric acid.

Abstract: There is provided a polishing composition capable of suppressing formation of a stepped portion caused by etching of a surface of a polishing object including a portion containing a group IV material when the polishing object is polished. The present invention relates to a polishing composition for polishing of a polishing object including a portion that contains a group IV material, and the polishing composition contains an oxidizing agent and an anticorrosive agent. Preferably, the anticorrosive agent includes at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule. To be more specific, preferably, the anticorrosive agent includes at least one selected from the group consisting of a 1,3-diketone compound, a 1,4-diketone compound, and a triketone compound.

Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.

Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.

Abstract: There is provided a polishing composition capable of suppressing formation of a stepped portion caused by etching of a surface of a polishing object including a portion containing a group IV material when the polishing object is polished. The present invention relates to a polishing composition for polishing of a polishing object including a portion that contains a group IV material, and the polishing composition contains an oxidizing agent and an anticorrosive agent. Preferably, the anticorrosive agent includes at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule. To be more specific, preferably, the anticorrosive agent includes at least one selected from the group consisting of a 1,3-diketone compound, a 1,4-diketone compound, and a triketone compound.

Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises odd-shaped abrasive grains and an oxidizing agent having a standard electrode of 0.3 V or more, and preferably further contains a salt, such as an ammonium salt. The pH of the polishing composition is 1 or more and 6 or less, or 8 or more and 14 or less. The average degree of association of the abrasive grains, obtained by dividing the value of the average secondary particle diameter of the abrasive grains by the value of the average primary particle diameter of the abrasive grains, is preferably 1.6 or more.

Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains an oxidizing agent and an anticorrosive agent. The anticorrosive agent is preferably a nitrogen-containing organic compound, such as 1H-1,2,4-triazole and benzotriazole, or an organic compound having a carboxyl group, for example, dicarboxylic acid, such as malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, and tartaric acid, or tricarboxylic acid, such as citric acid.

Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains abrasive grains, an oxidizing agent, and a water-soluble polymer. When the polishing composition is left to stand for one day in an environment with a temperature of 25° C., the water-soluble polymer may be adsorbed on the abrasive grains at 5,000 or more molecules per 1 ?m2 of the surface area of the abrasive grains. Alternatively, the water-soluble polymer may be a compound that reduces the water contact angle of the portion containing a group III-V compound material of the object after being polished with the polishing composition.

Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.