Abstract: This disclosure relates to an analysis method for analyzing a chemical reaction from one or more starting materials, comprising a preparation step S1 of preparing a reaction network diagram indicating the one or more starting materials, at least part of one or more intermediate products and one or more final products generated from the chemical reaction, and reaction pathways of the chemical reaction, and a prediction step S2 of predicting the reaction rate in each reaction pathway using an artificial intelligence algorithm.

Abstract: The present invention provides an etchant which is usable for a long period of time owing to its high indium solubility and reduced precipitation of a salt of oxalic acid and indium, and further has excellent residue removal and antifoaming properties, thereby being suitable for etching indium oxide-based films. An etchant for etching an indium oxide-based film, the etchant containing: (A) oxalic acid; (B) polyvinylpyrrolidone; and (C) water.

Abstract: The present invention aims to provide etchants suitable for etching indium oxide-based films in which precipitation of oxalic acid is reduced even when moisture is evaporated and which provide excellent residue removal not only on organic films and SiN but also on glass. Also, the present invention aims to provide etchants that have a high solubility of indium to reduce precipitation of a salt of oxalic acid and indium, and therefore can be used for a long period of time. The present invention also aims to provide etchants that maintain a high etching rate. Included is an etchant for etching an indium oxide-based film, the etchant containing: (A) oxalic acid; (B) a primary amine having two or more hydroxy groups and/or a polyhydric alcohol; and (C) water.

Abstract: The present invention provides an etchant which is usable for a long period of time owing to its high indium solubility and reduced precipitation of a salt of oxalic acid and indium, and further has excellent residue removal and antifoaming properties, thereby being suitable for etching indium oxide-based films. An etchant for etching an indium oxide-based film, the etchant containing: (A) oxalic acid; (B) polyvinylpyrrolidone; and (C) water.